RD12MVS1_10 [MITSUBISHI]
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W; 符合RoHS指令,硅MOSFET功率晶体管, 175MHz的, 12W![RD12MVS1_10](http://pdffile.icpdf.com/pdf1/p00178/img/icpdf/RD12M_1000303_icpdf.jpg)
型号: | RD12MVS1_10 |
厂家: | ![]() |
描述: | RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W |
文件: | 总7页 (文件大小:410K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
OUTLINE DRAWING
4.6+/-0.05
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
0.2+/-0.05
1
2
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
3
(0.25)
(0.25)
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25 , UNLESS OTHERWISE NOTED)
°C
SYMBOL
VDSS
VGSS
ID
PARAMETER
CONDITIONS
RATINGS
50
+/- 20
UNIT
V
V
Drain to Source Voltage VGS=0V
Gate to Source Voltage VDS=0V
Drain Current
4
A
Pin
Pch
Tj
Tstg
Rthj-c
Input Power
Zg=Zl=50Ω
Tc=25°C
2
50
150
W
W
°C
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
-40 to +125
2.5
°C
Junction to Case
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)
°C
LIMITS
MIN. TYP. MAX.
UNIT
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero Gate Voltage Drain Current VDS=17V, VGS=0V
-
-
-
-
-
12
57
10
1
4.4
-
uA
uA
V
W
%
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A
1.8
11.5
55
Drain Efficiency
-
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Load VSWR tolerance
Not destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
17 Aug 2010
1/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
10
8
60
50
40
30
20
10
0
Ta=+25°C
Vds=10V
*1:The material of the PCB
Glass epoxy(t=0.6 mm)
Ids
6
On PCB(*1) with Heat-sink
On PCB(*1)
with throgh hole
and Heat-sink
4
GM
2
0
0
40
80
120
160
200
0
1
2
3
4
5
6
7
Vgs(V)
A MBIENT TEMPERA TURE Ta(°C)
Vds-Ids CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
160
140
120
100
80
Ta=+25°C
Ta=+25°C
f=1MHz
Vgs=7.5V
Vgs=6.0V
Vgs=5.5V
Vgs=5.0V
60
Vgs=4.5V
Vgs=4.0V
40
20
Vgs=3.5V
0
0
2
4
6
8
10
0
5
10
Vds(V)
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
Vds VS. Crss CHARACTERISTICS
180
160
140
120
100
80
20
18
16
14
12
10
8
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
60
6
40
4
20
2
0
0
0
5
10
15
20
0
5
10
15
20
Vds(V)
Vds(V)
RD12MVS1
17 Aug 2010
2/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Pin-Po CHARACTERISTICS @f=175MHz
14
12
10
8
90
80
70
60
50
40
30
20
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
Po
Po
40
30
20
10
0
80
60
40
20
0
Ta=25°C
f=175MHz
Vdd=7.2V
η
d
Idq=1.0A
ηd
Gp
6
Idd
4
2
Idd
0
-5
0
5
10
15
20
25
30
0
200
400
600
800
1000
Pin(dBm)
Pin(mW)
Vdd-Po CHARACTERISTICS @f=175MHz
Vgs-Ids CHARACTORISTICS 2
-25°C
25
20
15
10
5
5
4
3
2
1
0
8
+25°C
Ta=25°C
Vds=10V
Tc=-25~+75°C
Po
f=175MHz
+75°C
Pin=0.3W
Icq=700mA
6
4
2
0
Zg=ZI=50 ohm
Idd
0
0
2
4
6
8
4
6
8
10
12
Vgs(V)
Vdd(V)
RD12MVS1
17 Aug 2010
3/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
Vdd
Vgg
C3
C2
C1
W
W
L2
43.7nH
Contact
3.5mm
Contact
3.5mm
47pF
3mm
33pF
4.7kΩ
6.0mm
5.0mm
24pF
RF-out
330pF
RF-in
35mm
20mm
25mm
68pF
L1
10.8nH
4mm
12mm
330pF
RD12MVS1
15pF
100pF
Note: Board material - Teflon substrate
L: Enameled wire
Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm
W: line width=1.0mm
ꢀꢀꢀChipꢀCondencer :GRM40
L1:4Turns,D:0.43mm,φ1.66mm(outside diameter)
L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)
C1, C2: 1000pF
Copper board spring t=0.1mm
C3: 10uF, 50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
f=175MHz Zout*
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
f=175MHz Zin*
RD12MVS1
17 Aug 2010
4/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
25
50
75
S11
S21
S12
S22
(mag)
0.824
0.816
0.817
0.829
0.837
0.845
0.852
0.860
0.870
0.876
0.886
0.891
0.902
0.903
0.909
0.907
0.912
0.923
0.928
0.934
0.932
0.936
0.932
0.935
0.939
0.939
0.943
0.945
0.943
0.939
0.943
0.948
0.951
0.953
0.952
0.954
0.944
0.951
0.954
0.955
(ang)
-159.3
-169.0
-171.7
-172.8
-173.4
-173.9
-174.0
-174.3
-175.0
-175.0
-175.6
-175.8
-175.9
-176.2
-176.7
-177.6
-177.9
-178.3
-178.5
-178.6
-178.8
-179.2
179.6
179.1
179.2
179.4
179.1
178.7
177.5
177.2
176.9
176.8
177.1
176.7
176.1
175.4
174.4
174.6
175.0
175.0
(mag)
(ang)
93.4
85.2
79.3
74.5
68.5
64.2
60.8
57.2
53.2
48.9
46.5
43.6
41.0
38.3
35.7
33.7
31.6
29.7
27.9
25.8
23.6
23.2
20.8
20.0
17.4
15.5
15.6
15.5
13.3
12.2
10.8
8.6
(mag)
0.018
0.016
0.016
0.016
0.016
0.015
0.016
0.012
0.014
0.013
0.012
0.012
0.014
0.012
0.009
0.009
0.009
0.004
0.008
0.007
0.005
0.006
0.004
0.003
0.003
0.003
0.003
0.002
0.004
0.001
0.004
0.002
0.003
0.003
0.006
0.003
0.007
0.006
0.003
0.003
(ang)
-3.3
1.4
(mag)
0.761
0.765
0.778
0.787
0.800
0.796
0.810
0.836
0.858
0.855
0.859
0.860
0.886
0.898
0.898
0.893
0.903
0.910
0.917
0.925
0.922
0.922
0.939
0.939
0.938
0.930
0.932
0.946
0.949
0.940
0.935
0.943
0.945
0.948
0.946
0.950
0.946
0.952
0.959
0.950
(ang)
-160.3
-168.1
-170.7
-170.3
-171.7
-172.3
-172.3
-172.2
-172.2
-173.0
-173.3
-173.4
-174.5
-174.6
-175.0
-175.6
-175.7
-176.6
-176.8
-177.3
-177.6
-177.6
-178.0
-178.9
-179.3
-179.5
-179.9
-179.9
179.3
179.0
178.8
178.2
177.5
176.8
176.7
176.7
176.0
175.7
175.0
174.8
26.397
13.193
8.716
6.537
5.110
4.117
3.402
2.896
2.525
2.175
1.897
1.675
1.496
1.348
1.208
1.087
0.996
0.912
0.836
0.748
0.707
0.647
0.591
0.562
0.520
0.485
0.460
0.435
0.407
0.380
0.358
0.327
0.308
0.314
0.284
0.269
0.254
0.250
0.232
0.227
-10.9
-14.1
-18.2
-18.3
-15.1
-30.4
-29.9
-24.5
-39.4
-53.1
-32.9
-32.2
-29.2
-21.6
-32.5
-37.2
-25.9
-21.3
-46.6
-25.0
-40.9
-33.6
17.7
25.4
51.4
5.7
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
5.6
-16.1
58.8
-6.7
8.0
8.5
7.0
9.7
6.7
6.0
1.9
7.8
40.4
77.0
46.5
64.5
60.3
69.7
80.3
86.7
RD12MVS1
17 Aug 2010
5/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to arise
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters for
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact to
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RD12MVS1
17 Aug 2010
6/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product
best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
rights, belonging to Mitsubishi Electric Corporation or a third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating
in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these
materials.
- All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents
information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric
Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information
before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical
errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and
algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the
information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss
resulting from the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific
purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these
materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license
from the Japanese government and cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
- Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details
on these materials or the products contained therein.
RD12MVS1
17 Aug 2010
7/7
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00305/img/page/RD10PB_1837782_files/RD10PB_1837782_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00305/img/page/RD10PB_1837782_files/RD10PB_1837782_2.jpg)
RD12PB
12V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, POWER, PLASTIC, SC-62, 3 PIN
RENESAS
©2020 ICPDF网 联系我们和版权申明