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RD12MVP1 [MITSUBISHI]

Silicon MOSFET Power Transistor, 175MHz, 10W; 硅MOSFET功率晶体管， 175MHz的， 10W
RD12MVP1
型号： RD12MVP1
厂家： Mitsubishi Group    Mitsubishi Group
描述：

Silicon MOSFET Power Transistor, 175MHz, 10W
硅MOSFET功率晶体管， 175MHz的， 10W

晶体 晶体管
文件： 总7页 (文件大小：124K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
(a)  
(b)  
(b)  
7.0+/-0.2  
DESCRIPTION  
OUTLINE DRAWING  
0.2+/-0.05  
8.0+/-0.2  
RD12MVP1 is a MOS FET type transistor  
specifically designed for VHF RF power  
amplifiers applications.  
(d)  
FEATURES  
2.6+/-0.2  
(4.5)  
0.95+/-0.2  
•High Power Gain  
INDEX MARK  
[Gate]  
(c)  
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz  
•High Efficiency: 55%min. (175MHz)  
•No gate protection diode  
TOP VIEW  
SIDE VIEW  
BOTTOM VIEW  
DETAIL  
A
Terminal No.  
(a)Drain [output]  
(b)Source [GND]  
(c)Gate [input]  
(d)Source  
APPLICATION  
SIDE VIEW  
For output stage of high power amplifiers in  
UNIT:mm  
NOTES:  
VHF band mobile radio sets.  
DETAIL  
A
1. ( ) Typical value  
RoHS COMPLIANT  
RD12MVP1 is a RoHS compliant product.  
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high  
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.  
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)  
ABSOLUTE MAXIMUM RATINGS  
(Tc=25 , UNLESS OTHERWISE NOTED)  
°C  
SYMBOL  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
CONDITIONS  
RATINGS  
60  
UNIT  
V
V
V
V
=0V  
=0V  
DSS  
GS  
DS  
V
GSS  
-5 to +20  
4.0  
V
ID  
Pin  
Pch  
Tj  
Tstg  
Rthj-c  
A
Input Power  
Zg=Zl=50Ω  
Tc=25°C  
1.0  
W
Channel Dissipation  
Junction Temperature  
Storage Temperature  
Thermal Resistance  
125  
W
+150  
°C  
-40 to +125  
1.5  
°C  
°C/W  
Junction to Case  
Note: Above parameters are guaranteed independently.  
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)  
°C  
LIMITS  
UNIT  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX.  
I
Zero Gate Voltage Drain Current V =17V, V =0V  
-
-
-
10  
1.0  
4.4  
-
uA  
uA  
V
W
%
DSS  
GSS  
TH  
DS  
GS  
DS  
GS  
I
Gate to Source Leak Current  
Gate Threshold Voltage  
Output Power  
V
V
=10V, V =0V  
-
DS  
V
Pout  
=12V, I =1mA  
1.8  
10  
55  
-
DS  
12  
57  
f=175MHz,V =7.2V  
DD  
Pin=0.5W,Idq=1.0A  
Drain Efficiency  
-
ηD  
V
DD  
=9.5V,Po=10W(Pin Control)  
VSWRT Load VSWR tolerance  
f=175MHz,Idq=1.0A,Zg=50Ω  
No destroy  
-
Load VSWR=20:1(All Phase)  
Note: Above parameters, ratings, limits and conditions are subject to change.  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
1/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
TYPICAL CHARACTERISTICS  
DRAIN DISSIPATION VS.  
AMBIENT TEMPERATURE  
Vgs-Ids CHARACTERISTICS  
7
6
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
Ta=+25°C  
Vds=10V  
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)  
Thermal sheet: GELTEC COOH-4000(t=0.5mm)  
Ids  
On PCB with Termal sheet  
and Heat-sink  
(Size : 41 x 55mm, t=7.2 mm)  
0
40  
80  
120  
160  
200  
0
1
2
3
4
5
6
7
AMBIENT TEMPERATURE Ta(deg:C.)  
Vgs(V)  
Vds-Ids CHARACTERISTICS  
Vds VS. Ciss CHARACTERISTICS  
9
8
7
6
5
4
3
2
1
0
160  
140  
120  
100  
80  
Ta=+25°C  
Vgs=7.5V  
Vgs=6.5V  
Ta=+25°C  
f=1MHz  
60  
Vgs=5.5V  
Vgs=4.5V  
40  
20  
0
0
1
2
3
4
5
6
7
8
9
0
5
10  
15  
20  
Vds(V)  
Vds(V)  
Vds VS. Coss CHARACTERISTICS  
Vds VS. Crss CHARACTERISTICS  
160  
140  
120  
100  
80  
20  
Ta=+25°C  
f=1MHz  
Ta=+25°C  
f=1MHz  
18  
16  
14  
12  
10  
8
60  
6
40  
4
20  
2
0
0
0
5
10  
Vds(V)  
15  
20  
0
5
10  
Vds(V)  
15  
20  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
2/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
TYPICAL CHARACTERISTICS  
Pin-Po CHARACTERISTICS @f=175MHz  
Pin-Po CHARACTERISTICS @f=175MHz  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
Ta=+25°C  
f=175MHz  
Vdd=7.2V  
Idq=1.0A  
Po  
40  
30  
20  
10  
0
80  
60  
40  
20  
0
Po  
η
ｄ
ηd  
Ta=25°C  
f=175MHz  
Vdd=7.2V  
Idq=1.0A  
Gp  
6
Idd  
4
Ｉｄｄ  
2
0
0
5
10  
15  
Pin(dBm)  
20  
25  
30  
0.0  
0.5  
1.0  
1.5  
Pin(W)  
Vdd-Po CHARACTERISTICS @f=175MHz  
30  
6
Ta=25°C  
f=175MHz  
Po  
Pin=0.6W  
Idq=1.0A  
Zg=ZI=50 ohm  
25  
20  
15  
10  
5
5
4
3
2
1
Idd  
4
6
8
10  
12  
Vdd(V)  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
3/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
TEST CIRCUIT (f=175MHz)  
Vgg  
Vdd  
C1  
C2  
22uF,50V  
19mm W  
RD12MVP1  
175MHz  
W
19mm  
L2  
47pF  
4.7k Ohm  
47pF  
17mm  
RF-out  
330pF  
RF-in  
330pF  
3.5mm  
3mm  
9.5mm  
3mm  
24pF  
9.5mm  
14mm  
9mm  
54pF  
L1  
100pF  
Note:Board material= glass-Epoxy Substrate  
L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter)  
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm  
L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)  
C1,C2:2200pF  
W:Line width=1.0mm  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
4/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)  
Freq.  
[MHz]  
100  
125  
150  
175  
200  
225  
250  
275  
300  
325  
350  
375  
400  
425  
450  
475  
500  
525  
550  
575  
600  
625  
650  
675  
700  
725  
750  
775  
800  
825  
850  
875  
900  
925  
950  
975  
1000  
S11  
S21  
S12  
S22  
(mag)  
0.782  
0.801  
0.817  
0.833  
0.847  
0.860  
0.872  
0.882  
0.894  
0.901  
0.910  
0.917  
0.918  
0.923  
0.930  
0.933  
0.938  
0.939  
0.942  
0.943  
0.946  
0.950  
0.950  
0.953  
0.952  
0.954  
0.955  
0.954  
0.955  
0.958  
0.958  
0.956  
0.958  
0.956  
0.958  
0.957  
0.959  
(ang)  
-165.5  
-166.9  
-168.0  
-168.8  
-169.7  
-170.6  
-171.6  
-172.4  
-173.0  
-173.5  
-174.2  
-175.2  
-176.1  
-176.7  
-177.2  
-177.7  
-178.1  
-178.8  
-179.3  
179.7  
179.5  
179.1  
178.8  
178.3  
177.9  
177.5  
176.9  
176.4  
176.3  
175.9  
175.6  
175.1  
174.5  
174.3  
174.0  
173.8  
173.6  
(mag)  
6.105  
4.716  
3.724  
3.023  
2.519  
2.137  
1.828  
1.569  
1.361  
1.193  
1.062  
0.947  
0.844  
0.756  
0.683  
0.623  
0.568  
0.520  
0.477  
0.439  
0.407  
0.378  
0.350  
0.327  
0.306  
0.286  
0.268  
0.252  
0.238  
0.225  
0.213  
0.203  
0.192  
0.182  
0.175  
0.166  
0.158  
(ang)  
69.0  
62.4  
56.4  
51.6  
47.5  
43.5  
39.6  
36.0  
33.4  
31.0  
28.5  
25.9  
23.5  
21.5  
20.4  
18.7  
17.2  
15.7  
14.3  
13.3  
12.2  
11.3  
10.4  
9.8  
(mag)  
0.024  
0.022  
0.021  
0.019  
0.016  
0.015  
0.013  
0.012  
0.010  
0.008  
0.007  
0.006  
0.005  
0.004  
0.005  
0.005  
0.006  
0.007  
0.008  
0.009  
0.011  
0.011  
0.012  
0.013  
0.014  
0.015  
0.016  
0.018  
0.018  
0.020  
0.021  
0.022  
0.023  
0.024  
0.025  
0.026  
0.026  
(ang)  
-16.8  
-20.5  
-25.7  
-27.3  
-31.1  
-30.0  
-34.0  
-30.9  
-31.7  
-24.1  
-20.9  
-13.8  
-1.5  
(mag)  
0.743  
0.766  
0.783  
0.799  
0.825  
0.845  
0.864  
0.871  
0.879  
0.888  
0.901  
0.915  
0.918  
0.917  
0.922  
0.928  
0.935  
0.943  
0.941  
0.941  
0.945  
0.949  
0.950  
0.952  
0.954  
0.951  
0.955  
0.957  
0.958  
0.961  
0.954  
0.960  
0.958  
0.962  
0.964  
0.964  
0.962  
(ang)  
-162.7  
-164.0  
-165.6  
-166.4  
-167.2  
-167.7  
-168.6  
-169.6  
-170.4  
-171.3  
-172.1  
-172.9  
-173.6  
-174.4  
-174.8  
-175.5  
-176.3  
-176.8  
-177.1  
-177.8  
-178.3  
-178.9  
-179.5  
-179.8  
179.8  
179.4  
178.9  
178.6  
178.1  
177.7  
177.5  
177.3  
176.8  
176.4  
176.0  
176.0  
175.8  
16.0  
35.4  
43.3  
53.6  
58.5  
63.6  
68.8  
73.9  
72.4  
74.8  
79.1  
77.0  
77.2  
79.2  
78.9  
79.9  
78.9  
80.1  
79.0  
79.6  
79.3  
78.3  
80.7  
78.8  
8.9  
8.3  
7.7  
7.2  
7.0  
6.4  
5.9  
5.5  
5.3  
5.3  
5.3  
5.2  
5.7  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
5/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)  
Freq.  
[MHz]  
100  
125  
150  
175  
200  
225  
250  
275  
300  
325  
350  
375  
400  
425  
450  
475  
500  
525  
550  
575  
600  
625  
650  
675  
700  
725  
750  
775  
800  
825  
850  
875  
900  
925  
950  
975  
1000  
S11  
S21  
S12  
S22  
(mag)  
0.799  
0.813  
0.825  
0.835  
0.846  
0.857  
0.868  
0.877  
0.886  
0.895  
0.900  
0.907  
0.909  
0.913  
0.921  
0.925  
0.932  
0.931  
0.933  
0.937  
0.943  
0.943  
0.946  
0.947  
0.946  
0.951  
0.949  
0.951  
0.950  
0.956  
0.956  
0.956  
0.953  
0.948  
0.955  
0.955  
0.957  
(ang)  
-169.4  
-170.7  
-171.3  
-171.9  
-172.5  
-173.4  
-174.3  
-174.9  
-175.3  
-175.7  
-176.4  
-177.3  
-178.1  
-178.7  
-179.1  
-179.6  
-180.0  
179.2  
178.6  
178.0  
177.7  
177.3  
177.0  
176.6  
175.9  
175.5  
175.0  
174.7  
174.5  
174.3  
173.7  
173.3  
172.8  
172.5  
172.2  
172.0  
171.8  
(mag)  
5.980  
4.690  
3.726  
3.045  
2.569  
2.206  
1.904  
1.648  
1.436  
1.270  
1.141  
1.023  
0.917  
0.820  
0.745  
0.683  
0.627  
0.575  
0.529  
0.486  
0.452  
0.422  
0.391  
0.366  
0.341  
0.322  
0.302  
0.284  
0.269  
0.253  
0.240  
0.228  
0.218  
0.206  
0.196  
0.186  
0.178  
(ang)  
72.2  
65.9  
60.1  
55.9  
52.3  
48.4  
44.3  
40.7  
38.2  
35.8  
33.1  
30.4  
27.7  
25.8  
24.6  
23.0  
21.2  
19.4  
18.1  
16.6  
16.1  
14.9  
14.0  
12.7  
12.0  
11.3  
10.5  
9.6  
(mag)  
0.021  
0.020  
0.019  
0.017  
0.016  
0.015  
0.013  
0.011  
0.010  
0.009  
0.008  
0.007  
0.007  
0.005  
0.006  
0.006  
0.007  
0.007  
0.008  
0.009  
0.010  
0.011  
0.013  
0.013  
0.015  
0.015  
0.016  
0.017  
0.019  
0.020  
0.020  
0.021  
0.023  
0.024  
0.024  
0.025  
0.026  
(ang)  
-11.2  
-14.9  
-17.2  
-21.5  
-22.4  
-21.1  
-21.2  
-21.3  
-19.9  
-15.8  
-11.9  
-7.2  
(mag)  
0.757  
0.780  
0.785  
0.794  
0.821  
0.846  
0.863  
0.864  
0.864  
0.876  
0.891  
0.906  
0.915  
0.908  
0.910  
0.921  
0.933  
0.937  
0.935  
0.931  
0.935  
0.945  
0.948  
0.946  
0.946  
0.945  
0.949  
0.952  
0.955  
0.954  
0.950  
0.952  
0.953  
0.958  
0.959  
0.958  
0.956  
(ang)  
-166.6  
-167.5  
-168.8  
-169.3  
-169.3  
-169.5  
-170.4  
-170.9  
-171.4  
-172.0  
-172.6  
-173.1  
-173.9  
-174.4  
-174.5  
-175.2  
-175.9  
-176.6  
-176.8  
-177.0  
-177.4  
-178.0  
-178.6  
-179.0  
-179.3  
-179.6  
179.9  
179.4  
179.0  
178.9  
178.9  
178.4  
177.9  
177.4  
177.3  
177.4  
177.1  
1.3  
20.2  
27.4  
36.9  
50.8  
53.6  
57.3  
67.9  
70.4  
70.9  
73.8  
75.6  
76.9  
75.8  
76.4  
77.8  
79.0  
77.8  
78.7  
78.7  
77.3  
76.8  
78.3  
78.6  
79.1  
9.3  
9.2  
8.7  
7.9  
7.1  
6.6  
7.0  
7.3  
7.1  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
6/7  
MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD12MVP1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W  
Keep safety first in your circuit designs!  
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more  
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead  
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit  
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable  
material or (iii) prevention against any malfunction or mishap.  
Warning!  
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the  
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to  
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.  
RD12MVP1  
1st Jun. 2006  
MITSUBISHI ELECTRIC  
7/7  

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 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
MITSUBISHI

RD12MVS1_10

 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
MITSUBISHI

RD12MVS1_11

 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
MITSUBISHI

RD12MW

 ZENER DIODES 200 mW 3-PIN MINI MOLD
NEC

RD12MWB

 Zener Diode, 12V V(Z), 4.91%, 0.2W, Silicon, Unidirectional, PLASTIC, SC-59, 3 PIN
NEC

RD12MWB

 12V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SC-59, 3 PIN
RENESAS

RD12P

 1W POWER MINI MOLD ZENER DIODE
NEC

RD12P

 12V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, POWER, MINIMOLD PACKAGE-3
RENESAS

RD12P-T2B

 Zener Diode, 1W, Silicon, Unidirectional, POWER, PLASTIC, SC-62, 3 PIN
NEC
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