RD12MVS1 [MITSUBISHI]
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W; 符合RoHS指令，硅MOSFET功率晶体管， 175MHz的， 12W
| 型号： | RD12MVS1 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W |
| 文件： | 总7页 (文件大小：496K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
OUTLINE DRAWING
4.6+/-0.05
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
0.2+/-0.05
1
2
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
3
(0.25)
(0.25)
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant
products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25 , UNLESS OTHERWISE NOTED)
°C
SYMBOL
VDSS
VGSS
ID
PARAMETER
CONDITIONS
RATINGS
50
+/- 20
UNIT
V
V
Drain to Source Voltage VGS=0V
Gate to Source Voltage VDS=0V
Drain Current
4
A
Pin
Pch
Tj
Tstg
Rthj-c
Input Power
Zg=Zl=50Ω
Tc=25°C
2
50
150
W
W
°C
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
-40 to +125
2.5
°C
Junction to Case
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)
°C
LIMITS
MIN. TYP. MAX.
UNIT
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero Gate Voltage Drain Current VDS=17V, VGS=0V
-
-
-
-
-
12
57
10
1
4.4
-
uA
uA
V
W
%
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A
1.8
11.5
55
Drain Efficiency
-
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Load VSWR tolerance
Not destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
1/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AM BIENT TEM PERATURE
Vgs-Ids CHARACTERISTICS
10
8
60
50
40
30
20
10
0
Ta=+25°C
Vds=10V
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Ids
6
On PCB(*1) with Heat-sink
4
GM
2
On PCB(*1)
0
0
40
80
120
160
200
0
1
2
3
4
5
6
7
Vgs(V)
A MBIENT TEMPERA TURE Ta(°C)
Vds-Ids CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
160
140
120
100
80
Ta=+25°C
Ta=+25°C
f=1MHz
Vgs=7.5V
Vgs=6.0V
Vgs=5.5V
Vgs=5.0V
60
Vgs=4.5V
Vgs=4.0V
40
20
Vgs=3.5V
0
0
2
4
6
8
10
0
5
10
Vds(V)
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
Vds VS. Crss CHARACTERISTICS
120
100
80
60
40
20
0
20
18
16
14
12
10
8
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
6
4
2
0
0
5
10
15
20
0
5
10
15
20
Vds(V)
Vds(V)
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
2/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Pin-Po CHARACTERISTICS @f=175MHz
14
12
10
8
90
80
70
60
50
40
30
20
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
Po
Po
40
30
20
10
0
80
60
40
20
0
Ta=25°C
f=175MHz
Vdd=7.2V
η
ｄ
Idq=1.0A
ηd
Gp
6
Idd
4
2
Ｉｄｄ
0
-5
0
5
10
15
20
25
30
0
200
400
600
800
1000
Pin(dBm)
Pin(mW)
Vdd-Po CHARACTERISTICS @f=175MHz
Vgs-Ids CHARACTORISTICS 2
-25°C
25
20
15
10
5
5
4
3
2
1
0
8
+25°C
Ta=25°C
Vds=10V
Tc=-25~+75°C
Po
f=175MHz
+75°C
Pin=0.3W
Icq=700mA
6
4
2
0
Zg=ZI=50 ohm
Idd
0
0
2
4
6
8
4
6
8
10
12
Vgs(V)
Vdd(V)
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
3/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
Vdd
Vgg
C3
C2
C1
W
W
L2
43.7nH
Contact
3.5mm
Contact
3.5mm
47pF
3mm
33pF
4.7kΩ
6.0mm
5.0mm
24pF
RF-out
330pF
RF-in
35mm
20mm
25mm
68pF
L1
10.8nH
4mm
12mm
330pF
RD12MVS1
15pF
100pF
Note: Board material - Teflon substrate
L: Enameled wire
Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm
W: line width=1.0mm
ꢀꢀꢀChipꢀCondencer :GRM40
L1:4Turns,D:0.43mm,φ1.66mm(outside diameter)
L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)
C1, C2: 1000pF
Copper board spring t=0.1mm
C3: 10uF, 50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
f=175MHz Zout*
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
f=175MHz Zin*
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
4/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
25
50
75
S11
S21
S12
S22
(mag)
0.824
0.816
0.817
0.829
0.837
0.845
0.852
0.860
0.870
0.876
0.886
0.891
0.902
0.903
0.909
0.907
0.912
0.923
0.928
0.934
0.932
0.936
0.932
0.935
0.939
0.939
0.943
0.945
0.943
0.939
0.943
0.948
0.951
0.953
0.952
0.954
0.944
0.951
0.954
0.955
(ang)
-159.3
-169.0
-171.7
-172.8
-173.4
-173.9
-174.0
-174.3
-175.0
-175.0
-175.6
-175.8
-175.9
-176.2
-176.7
-177.6
-177.9
-178.3
-178.5
-178.6
-178.8
-179.2
179.6
179.1
179.2
179.4
179.1
178.7
177.5
177.2
176.9
176.8
177.1
176.7
176.1
175.4
174.4
174.6
175.0
175.0
(mag)
(ang)
93.4
85.2
79.3
74.5
68.5
64.2
60.8
57.2
53.2
48.9
46.5
43.6
41.0
38.3
35.7
33.7
31.6
29.7
27.9
25.8
23.6
23.2
20.8
20.0
17.4
15.5
15.6
15.5
13.3
12.2
10.8
8.6
(mag)
0.018
0.016
0.016
0.016
0.016
0.015
0.016
0.012
0.014
0.013
0.012
0.012
0.014
0.012
0.009
0.009
0.009
0.004
0.008
0.007
0.005
0.006
0.004
0.003
0.003
0.003
0.003
0.002
0.004
0.001
0.004
0.002
0.003
0.003
0.006
0.003
0.007
0.006
0.003
0.003
(ang)
-3.3
1.4
(mag)
0.761
0.765
0.778
0.787
0.800
0.796
0.810
0.836
0.858
0.855
0.859
0.860
0.886
0.898
0.898
0.893
0.903
0.910
0.917
0.925
0.922
0.922
0.939
0.939
0.938
0.930
0.932
0.946
0.949
0.940
0.935
0.943
0.945
0.948
0.946
0.950
0.946
0.952
0.959
0.950
(ang)
-160.3
-168.1
-170.7
-170.3
-171.7
-172.3
-172.3
-172.2
-172.2
-173.0
-173.3
-173.4
-174.5
-174.6
-175.0
-175.6
-175.7
-176.6
-176.8
-177.3
-177.6
-177.6
-178.0
-178.9
-179.3
-179.5
-179.9
-179.9
179.3
179.0
178.8
178.2
177.5
176.8
176.7
176.7
176.0
175.7
175.0
174.8
26.397
13.193
8.716
6.537
5.110
4.117
3.402
2.896
2.525
2.175
1.897
1.675
1.496
1.348
1.208
1.087
0.996
0.912
0.836
0.748
0.707
0.647
0.591
0.562
0.520
0.485
0.460
0.435
0.407
0.380
0.358
0.327
0.308
0.314
0.284
0.269
0.254
0.250
0.232
0.227
-10.9
-14.1
-18.2
-18.3
-15.1
-30.4
-29.9
-24.5
-39.4
-53.1
-32.9
-32.2
-29.2
-21.6
-32.5
-37.2
-25.9
-21.3
-46.6
-25.0
-40.9
-33.6
17.7
25.4
51.4
5.7
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
5.6
-16.1
58.8
-6.7
8.0
8.5
7.0
9.7
6.7
6.0
1.9
7.8
40.4
77.0
46.5
64.5
60.3
69.7
80.3
86.7
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
5/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=900mA)
Freq.
[MHz]
25
50
75
S11
S21
S12
S22
(mag)
0.815
0.802
0.803
0.818
0.829
0.838
0.849
0.855
0.869
0.878
0.886
0.898
0.905
0.908
0.915
0.919
0.922
0.926
0.933
0.937
0.940
0.937
0.937
0.935
0.945
0.948
0.951
0.950
0.946
0.948
0.947
0.948
0.955
0.958
0.954
0.950
0.947
0.950
0.953
0.959
(ang)
-150.5
-163.9
-167.8
-169.7
-170.6
-171.5
-171.6
-172.0
-172.9
-173.7
-174.1
-174.3
-174.5
-174.9
-175.8
-176.6
-177.3
-177.7
-177.7
-177.8
-178.5
-179.3
179.7
179.7
179.6
179.7
179.5
178.9
178.0
177.2
177.1
176.9
177.1
176.8
176.2
175.3
174.9
174.9
174.9
174.7
(mag)
(ang)
96.3
85.5
78.2
72.7
66.0
60.7
57.1
52.9
48.7
44.8
41.8
38.8
36.3
33.5
31.1
28.7
26.9
25.0
23.0
20.9
19.6
18.2
16.2
14.6
13.1
14.1
12.6
9.0
(mag)
0.016
0.016
0.016
0.016
0.016
0.014
0.014
0.015
0.013
0.013
0.012
0.009
0.011
0.009
0.010
0.007
0.006
0.008
0.005
0.005
0.006
0.004
0.007
0.004
0.004
0.004
0.003
0.003
0.003
0.004
0.004
0.005
0.005
0.004
0.004
0.003
0.007
0.006
0.005
0.008
(ang)
0.3
-6.2
(mag)
0.700
0.698
0.719
0.732
0.751
0.753
0.784
0.813
0.836
0.839
0.844
0.851
0.873
0.895
0.891
0.898
0.899
0.913
0.925
0.923
0.924
0.923
0.940
0.935
0.934
0.938
0.937
0.943
0.951
0.948
0.944
0.938
0.947
0.949
0.953
0.950
0.947
0.947
0.950
0.949
(ang)
-150.9
-161.8
-165.9
-164.9
-166.6
-167.1
-167.7
-167.8
-168.4
-168.9
-169.9
-170.5
-171.1
-172.0
-172.4
-172.9
-173.5
-173.9
-174.8
-175.1
-175.7
-175.9
-176.4
-177.1
-177.9
-177.9
-178.1
-178.9
-179.5
-179.9
179.8
179.6
178.7
178.4
178.1
177.8
177.4
176.6
176.1
175.2
31.656
15.905
10.443
7.776
6.054
4.816
3.945
3.358
2.872
2.459
2.135
1.876
1.671
1.492
1.329
1.188
1.083
0.974
0.894
0.816
0.745
0.700
0.643
0.605
0.549
0.510
0.479
0.454
0.424
0.382
0.370
0.357
0.332
0.323
0.301
0.296
0.284
0.252
0.251
0.230
-12.3
-16.7
-18.7
-24.8
-27.4
-32.9
-33.6
-27.8
-29.3
-19.7
-46.4
-51.2
-37.5
-39.4
-76.7
-46.1
-48.1
-46.9
-25.8
-45.0
-49.7
1.3
-46.8
51.2
32.2
-36.9
83.3
29.6
47.6
68.7
60.4
66.9
92.7
68.9
65.3
87.1
90.1
90.1
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
8.9
7.2
6.0
7.4
4.4
4.9
2.7
2.4
-1.0
-0.5
2.6
-2.3
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
6/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Warning!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
RD12MVS1
10 Jan 2006
MITSUBISHI ELECTRIC
7/7
相关型号：
RD12MVS1-101
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
MITSUBISHI
RD12MVS1-101,T112
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
MITSUBISHI
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