MRF373 [MOTOROLA]
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频MOSFET行射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF373 |
| 厂家： | 
MOTOROLA |
| 描述： | The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总12页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF373/D
SEMICONDUCTOR TECHNICAL DATA
Product Is Not Recommended for New Design.
The next generation of higher performance products are in development. Visit our online
Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
The RF MOSFET Line
60 W, 470 – 860 MHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common source amplifier applications in
28 volt transmitter equipment.
•
Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
•
Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
CASE 360B–03, STYLE 1
(MRF373)
Output Power – 100 Watts (PEP)
D
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
•
•
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
CASE 360C–03, STYLE 1
(MRF373S)
G
S
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Drain–Source Voltage
Gate–Source Voltage
V
DSS
Vdc
Vdc
Adc
V
GS
±20
7
Drain Current – Continuous
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF373S
P
D
173
1.33
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
– 65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
Max
0.75
1
Unit
°C/W
°C/W
MRF373S
MRF373
R
R
θJC
θJC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
Motorola, Inc. 2000
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0, I =1 µA)
V
65
–
–
–
–
–
1
1
Vdc
µAdc
µAdc
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 28 V, V = 0)
D
I
DSS
DS
Gate–Source Leakage Current
(V = 20 V, V = 0)
GS
I
–
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
3
3
4
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V
DS
= 10 V, I = 200 µA)
D
Gate Quiescent Voltage
(V = 28 V, I = 100 mA)
4
DS
Drain–Source On–Voltage
(V = 10 V, I = 3 A)
D
V
–
0.6
2.9
0.8
–
GS
Forward Transconductance
(V = 10 V, I = 3 A)
D
g
fs
2.2
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
79
46
4
–
–
–
pF
pF
pF
iss
(V
DS
= 28 V, V
= 0, f = 1 MHz)
= 0, f = 1 MHz)
GS
GS
Output Capacitance
(V = 28 V, V
C
oss
DS
Reverse Transfer Capacitance
(V = 28 V, V = 0, f = 1 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain
G
13
50
14.7
54
–
–
dB
%
ps
(V
DD
= 28 V, P
= 60 W, I
= 60 W, I
= 60 W, I
= 200 mA, f = 860 MHz)
= 200 mA, f = 860 MHz)
= 200 mA, f = 860 MHz,
out
out
out
DQ
DQ
DQ
Drain Efficiency
(V = 28 V, P
η
DD
Load Mismatch
(V = 28 V, P
ψ
No Degradation in Output Power
DD
Load VSWR at 5:1 at All Phase Angles)
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture
Common Source Power Gain
(V = 28 Vdc, P = 100 W PEP, I
f1 = 860.0 MHz, f2 = 866 MHz)
G
–
–
–
11.2
40
–
–
–
dB
%
ps
= 400 mA,
= 400 mA,
= 400 mA,
DD
out
DQ
DQ
DQ
Drain Efficiency
η
(V
DD
= 28 Vdc, P
f1 = 860.0 MHz, f2 = 866 MHz)
= 100 W PEP, I
out
Third Order Intermodulation Distortion
IMD
–30
dBc
(V
DD
= 28 Vdc, P
f1 = 860.0 MHz, f2 = 866 MHz)
= 100 W PEP, I
out
MRF373 MRF373S
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
V
DD
V
GG
C10
C11
C7
C12
R2
R1
C15
C14
C13
L1
C4
C1
RF
OUTPUT
Z12
Z7
Z8
Z9
Z10
Z11
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
C2
C3
C9
C8
C6
C5
C1
C2
C3
4.7 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
6.8 pF, B Case Chip Capacitor, ATC
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, ε = 2.55
r
C4, C5, C6 10 pF, B Case Chip Capacitor, ATC
C7, C8
C9
C10, C13
C11
C12
C14
C15
L1
Heatsink
Insert
Motorola P/N 95–11LDMOSKPS–1
LDMOS 250 3″ x 5″ Bedstead
47 pF, B Case Chip Capacitor, ATC
0.2 pF, B Case Chip Capacitor, ATC
Motorola P/N 95–11LDMOSKPS–2
Insert for LDMOS 250 3″ x 5″ Bedstead
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 F, 50 V, Kemet P/N C1825C225
22 F, 50 V, Kemet P/N T491D226K50AS
2) 1.0 F, 50 V, Kemet P/N C1825C105
10 F, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
R1
R2
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373)
TO GATE
BIAS SUPPLY
TO DRAIN
BIAS SUPPLY
R2
C14
C15
C11
C12
C13
R1
C10
L1
C4
C5
C1
C8
C7
C3
C2
C9
C6
MRF373
Figure 2. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373)
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
3
Figure 3. MRF373 Narrowband Test Fixture Photo
V
DD
V
GG
C20
C21
Z15
C22
R2
R1
C25
Z3
C24
C23
L1
C7
C1
RF
OUTPUT
Z16
Z10
Z11
Z12
Z13
Z14
RF
INPUT
C5
Z1
Z2
Z4 Z5 Z6
Z7
Z8
Z9
C2
C3
C4
C6
C10
C11
C9
C8
C1, C2
C3
18 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
C4, C11
C5, C10
C6
C7
C8
0.8 pF, B Case Chip Capacitor, ATC
68 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
(GX–0300–55), height 30 mils, ε = 2.55
r
(new PCB’s available from CMR)
Motorola P/N 95–11LDMOSKPS–1
LDMOS 250 3″ x 5″ Bedstead
Motorola P/N 95–11LDMOSKPS–2S
Insert for LDMOS 250S 3″ x 5″ Bedstead
Heatsink
Insert
C9
C20, C23
C21
C24
C22
C25
L1
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 F, 100 V, Vishay P/N VJ3640Y225KXBAT
2) 1.0 F, 50 V, Kemet P/N C1825C105
22 F, 35 V, Kemet P/N T491D226K35AS
10 F, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
R1
R2
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373S)
MRF373 MRF373S
4
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
TO GATE
BIAS SUPPLY
TO DRAIN
BIAS SUPPLY
R2
C24
C25
C21
C22
C23
R1
C20
L1
C7
C1
C10
C5
C3
C2
C4
C6
C11
C9
C8
MRF373S
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373S)
Figure 6. MRF373S Narrowband Test Circuit Photo
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
5
TYPICAL CHARACTERISTICS FOR MRF373 IN SINGLE–ENDED FIXTURE
18
17
16
15
14
13
22
58
57
56
55
54
53
52
51
50
V
= 28 V
DD
f = 860 MHz
IRL
η
V
= 28 V
= 200 mA
= 60 W (CW)
20
18
16
14
12
10
8
DD
I
DQ
P
out
I
DQ
= 500 mA
400 mA
300 mA
G
p
200 mA
100 mA
6
800
30
35
40
45
50
820
840
860
880
900
920
P , OUTPUT POWER (dBm)
out
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Output Power
Figure 8. Performance in Narrowband Circuit
120
100
80
60
40
20
0
C
iss
C
oss
C
rss
0
10
20
30
40
50
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
Figure 9. Capacitance versus Voltage
Table 1. Common Source S–Parameters (V
= 28 V, I = 2.0 A)
D
DS
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
182
181
180
179
178
177
176
176
175
174
173
|S
|
φ
|S
|
φ
|S
|
φ
11
21
12
22
400
450
500
550
600
650
700
750
800
850
900
0.921
0.922
0.924
0.926
0.929
0.932
0.936
0.940
0.945
0.951
0.957
2.23
1.95
1.70
1.49
1.31
1.16
1.03
0.93
0.84
0.78
0.72
52
0.009
0.009
0.010
0.011
0.013
0.015
0.017
0.019
0.021
0.023
0.025
39
0.824
0.832
0.841
0.851
0.860
0.870
0.881
0.892
0.904
0.917
0.929
184
49
46
42
38
35
31
28
26
24
24
53
64
72
78
81
82
82
82
80
78
184
184
183
183
182
182
181
180
180
179
MRF373 MRF373S
6
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
C19A
R3
R4
R2A
R5T
C17A
R6
C16A
L3A
R7A
C15
C18A
R1A
L5
L1A
C3A
C4
C14A
C2
L2
C5
C6
C12
C1
C9
C13
C7 C8
C10
C11
L1B
L4
C3B
L6
C14B
R1B
C18B
R7B
L3B
R2B
C16B
C17B
MRF373S
C19B
Vertical Balun Mounting Detail
Motorola Vertical 660 MHz Balun
Rogers RO3010 (50 mil thick)
Output 2
(12.5 ohm microstrip)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Input
(50 ohm microstrip)
Note:
Trim Balun PCB so that a 35 mil “tab”
fits into the main PCB “slot” resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
55 mil slot cut
out to accept Balun
Ground
Figure 10. MRF373S Broadband Push–Pull Component Layout
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
7
Table 2. MRF373S Broadband Push–Pull Application Parts List
Designation
Description
1.0 pF, AVX, P12101J1R0BBT
C1
C2, C4, C10
C3A, B
10 pF, AVX, P12101J100GBT
120 pF, 300 V, AVX, AQ149M121JAJBE
12 pF, AVX, P12101J120GBT
C5, C6, C9
C7, C8
18 pF, AVX, P12101J180GBT
C11
6.8 pF, AVX, P12101J6R8BBT
C12
4.7 pF, AVX, P12101J4R7BBT
C13, C18A, B
C14A, B
C15
3.3 pF, AVX, P12101J3R3BBT
100 pF, 500 V, AVX, AQ147M101JAJBE
2.7 pF, AVX, P12101J2R7BBT
C16A, B
C17A, B, C19A, B
L1A, B, L3A, B, L4, L5
L2, L6
3.3 F, 100 V, Vitramon P/N VJ3640Y335KXBAT
22 F, 35 V, Kemet P/N T491D226K35AS
8.0 nH, Coilcraft P/N A03T
12.5 nH, Coilcraft P/N A04T
R1A, B
22 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
10 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
390 Ω, Vishay Dale Chip Resistor (1206)
2.4 kΩ, Vishay Dale Chip Resistor (1206)
470 Ω Thermistor, KOA SPEER MOT P/N 0680149M01
MRF373 PP Printed Circuit Board Rev 2C,
R2A, B
R3
R4
R5T
PCB
Rogers RO4350, Height 30 mils, ε = 3.48
r
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01,
Rogers RO3010, Height 50 mils, ε = 10.2
r
MRF373 MRF373S
8
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
–10
–15
–20
–25
–30
–35
–40
15
V
= 28 Vdc
DD
FREQUENCY = 6 MHz
V
I
= 28 Vdc
FREQUENCY = 6 MHz
= 250 mA per side
DD
14
13
12
11
10
I
DQ
= 250 mA per side
DQ
860 MHz
470 MHz
660 MHz
860 MHz
660 MHz
470 MHz
9
8
–45
–50
1
10
100
1000
1
10
100
1000
P , OUTPUT POWER (WATTS PEP)
out
P , OUTPUT POWER (WATTS PEP)
out
Figure 11. Intermodulation Distortion versus Output
Power (MRF373S Broadband Push–Pull Fixture)
Figure 12. Broadband Power Gain versus Output
Power (MRF373S Broadband Push–Pull Fixture)
50
V
= 28 Vdc
DD
FREQUENCY = 6 MHz
= 250 mA per side
860 MHz
660 MHz
40
30
20
I
DQ
470 MHz
10
0
1
10
100
1000
P , OUTPUT POWER (WATTS PEP)
out
Figure 13. Efficiency versus Output Power
(MRF373S Broadband Push–Pull Fixture)
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
9
NOTES
MRF373 MRF373S
10
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
NOTES
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
11
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030” AWAY FROM
EDGE OF FLANGE.
G
1
–B–
INCHES
DIM MIN MAX
0.810 20.07
MILLIMETERS
MIN
MAX
20.57
6.09
4.45
5.71
1.77
0.15
3
A
B
C
D
E
0.790
0.220
0.125
0.205
0.050
0.004
0.240
0.175
0.225
0.070
0.006
5.59
3.18
5.21
1.27
0.11
Q 2 PL
2
M
M
M
0.25 (0.010)
T A
B
K
D
F
G
H
K
N
Q
0.562 BSC
14.27 BSC
0.077
0.215
0.350
0.120
0.087
0.255
0.370
0.140
1.96
5.47
8.89
3.05
2.21
6.47
9.39
3.55
C
F
N
E
H
SEATING
PLANE
–T–
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–A–
CASE 360B–03
ISSUE D
(MRF373)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–B–
2. CONTROLLING DIMENSION: INCH.
2
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
9.40
5.59
2.67
5.21
0.89
0.11
1.45
2.16
8.89
MAX
9.91
6.09
3.94
5.71
1.14
0.15
1.70
2.92
9.39
D
A
B
C
D
E
0.370 0.390
0.220 0.240
0.105 0.155
0.205 0.225
0.035 0.045
0.004 0.006
0.057 0.067
E
N
F
F
H
H
K
N
0.085
0.115
C
–T–
3
0.350 0.370
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–A–
CASE 360C–03
ISSUE B
(MRF373S)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MRF373/D
相关型号：
MRF373S
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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