MRF373ALSR1 [MOTOROLA]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF373ALSR1 |
| 厂家： | 
MOTOROLA |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总8页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF373ALR1
N-Channel Enhancement-Mode Lateral MOSFETs
MRF373ALSR1
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
470 - 860 MHz, 75 W, 32 V
LATERAL N-CHANNEL
BROADBAND
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
RF POWER MOSFETs
Power Gain — 18.2 dB
Efficiency — 60%
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
• Integrated ESD Protection
• Excellent Thermal Stability
D
• Characterized with Series Equivalent Large-Signal
CASE 360B-05, STYLE 1
NI-360
Impedance Parameters
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373ALR1
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
G
CASE 360C-05, STYLE 1
NI-360S
MRF373ALSR1
S
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
- 0.5, +15
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF373ALR1
P
197
1.12
278
Watts
W/°C
Watts
W/°C
C
D
MRF373ALSR1
1.59
Storage Temperature Range
T
- 65 to +150
200
°C
°C
stg
Operating Junction Temperature
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
MRF373ALR1
MRF373ALSR1
R
θ
JC
0.89
0.63
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
Motorola, Inc. 2003
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ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
V
70
—
—
—
—
—
—
1
Vdc
µAdc
µAdc
(BR)DSS
(V = 0 Vdc, I =1 µA)
GS
D
Zero Gate Voltage Drain Current
(V = 32 Vdc, V = 0 Vdc)
I
I
DSS
GSS
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
1
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
2.9
3.3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
(V = 10 V, I = 200 µA)
DS
D
Gate Quiescent Voltage
(V = 32 V, I = 100 mA)
2.5
—
4.5
DS
D
Drain-Source On-Voltage
(V = 10 V, I = 3 A)
V
0.41
0.45
GS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
98.5
49
2
—
—
—
pF
pF
pF
iss
(V = 32 V, V = 0, f = 1 MHz)
DS
GS
Output Capacitance
(V = 32 V, V = 0, f = 1 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 32 V, V = 0, f = 1 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS (50 ohm system)
Common Source Power Gain
G
16.5
56
18.2
60
—
—
dB
%
ps
(V = 32 V, P = 75 W CW, I
= 200 mA, f = 860 MHz)
= 200 mA, f = 860 MHz)
= 200 mA, f = 860 MHz,
DD
out
DQ
DQ
DQ
Drain Efficiency
η
(V = 32 V, P = 75 W CW, I
DD
out
Load Mismatch
ψ
(V = 32 V, P = 75 W CW, I
No Degradation in Output Power
DD
out
Load VSWR at 10:1 at All Phase Angles)
MRF373ALR1 MRF373ALSR1
2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
R3
V
C14
V
GG
DD
C12
R2
C17
C13
C16
C15
L1
C7
R1
C1
C2
C1
RF INPUT
RF OUTPUT
C10
C5
C3
C4
C6
C9
C8
MRF373A
Rev 01
Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout
Table 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values
Designation
Description
18 pF Chip Capacitors, B Case, ATC
C1, C2
C3
12 pF Chip Capacitor, B Case, ATC
C4
1.8 pF Chip Capacitor, B Case, ATC
C5, C10
C6
51 pF Chip Capacitors, B Case, ATC
0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS)
15 pF Chip Capacitor, B Case, ATC
C7
C8
10 pF Chip Capacitor, B Case, ATC
C9
2.7 pF Chip Capacitor, B Case, ATC
C11
0.5 pF Chip Capacitor, B Case, ATC
C12
C13
C14, C15
C16
C17
L1A
1000 pF Chip Capacitor, B Case, ATC
39 pF Chip Capacitor, B Case, ATC
470 pF Chip Capacitors, B Case, ATC
2.2 mF, 100 V Chip Capacitor, Vishay #VJ3640Y225KXBAT
10 mF, 35 V Tantalum Capacitor, Kemet #T491D106K35AS
12 nH, Coilcraft #A04T
R1, R2
R3
390 Ω, 1/2 Ω Chip Resistors, Vishay Dale (2010)
1 kΩ, 1/2 Ω Chip Resistor, Vishay Dale (2010)
PCB
Arlon GX-0300-55, 30 mils, ε = 2.55
r
MOTOROLA RF DEVICE DATA
MRF373ALR1 MRF373ALSR1
3
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
20
V
= 32 Vdc
f = 860 MHz
DD
I
= 500 mA
DQ
19
18
400 mA
300 mA
200 mA
100 mA
17
16
15
1
10
, OUTPUT POWER (WATTS) CW
100
P
out
Figure 2. Power Gain versus Output Power
30
25
20
62
60
58
V
P
= 32 Vdc
= 75 W (CW)
DD
out
η
I
= 200 mA
DQ
IRL
G
ps
15
10
5
56
54
52
800
820
840
860
880
900
920
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
200
150
100
20
15
10
C
iss
C
C
oss
rss
50
0
5
0
0
10
20
30
40
50
60
V
, DRAIN SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Capacitance versus Voltage
MRF373ALR1 MRF373ALSR1
4
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
Z = 2 Ω
o
Z
load
Z
source
f = 875 MHz
f = 875 MHz
f = 845 MHz
f = 845 MHz
V
= 32 V, I = 200 mA, P = 75 W CW
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
845
860
875
0.58 - j0.29
0.56 - j0.11
0.56 + j0.06
1.60 + j0.07
1.65 + j0.22
1.79 + j0.38
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
load
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 5. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF373ALR1 MRF373ALSR1
5
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Freescale Semiconductor, Inc.
NOTES
MRF373ALR1 MRF373ALSR1
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
Q
M
M
M
B
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
G
1
aaa
T A
B
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
INCHES
DIM MIN MAX
0.805 20.19
MILLIMETERS
B
MIN
MAX
20.45
5.97
4.45
5.59
1.65
0.15
2
(FLANGE)
A
B
0.795
0.225
0.125
0.210
0.055
0.004
2X K
0.235
0.175
0.220
0.065
0.006
5.72
3.18
5.33
1.40
0.10
2X D
bbb
C
M
M
M
T A
B
R
D
(LID)
E
F
M
M
M
B
ccc
T A
G
0.562 BSC
14.28 BSC
H
0.077
0.220
0.355
0.357
0.125
0.227
0.225
0.087
0.250
0.365
0.363
0.135
0.233
0.235
1.96
5.59
9.02
9.07
3.18
5.77
5.72
2.21
6.35
9.27
9.22
3.43
5.92
5.97
F
K
H
M
M
M
B
M
ccc
T A
N
N
(LID)
Q
C
E
R
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.13 REF
0.25 REF
0.38 REF
S
(INSULATOR)
M
M
M
B
aaa
T A
SEATING
PLANE
T
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
M
M
B
bbb
T A
M
(INSULATOR)
CASE 360B-05
ISSUE F
A
A
NI-360
MRF373ALR1
A
A
(FLANGE)
B
B
1
2
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
(FLANGE)
2X D
M
M
M
bbb
T A
B
INCHES
DIM MIN MAX
MILLIMETERS
R
MIN
9.53
5.72
2.67
5.33
0.89
0.10
1.45
2.16
9.02
9.07
5.77
5.72
MAX
9.78
5.97
3.94
5.59
1.14
0.15
1.70
2.92
9.27
9.22
5.92
5.97
(LID)
A
B
0.375
0.225
0.105
0.210
0.035
0.004
0.057
0.085
0.355
0.357
0.227
0.225
0.385
0.235
0.155
0.220
0.045
0.006
0.067
0.115
0.365
0.363
0.23
M
M
M
ccc
T A
B
C
N
F
D
(LID)
H
E
M
M
M
B
ccc
T A
F
H
K
E
M
N
C
S
R
(INSULATOR)
S
0.235
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.13 REF
0.25 REF
0.38 REF
M
M
M
B
aaa
T A
SEATING
PLANE
PIN 3
T
M
(INSULATOR)
STYLE 1:
M
M
M
bbb
T A
B
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 360C-05
ISSUE D
NI-360S
MRF373ALSR1
MOTOROLA RF DEVICE DATA
MRF373ALR1 MRF373ALSR1
7
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Freescale Semiconductor, Inc.
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E Motorola Inc. 2003
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MRF373A/D
◊
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相关型号：
MRF373S
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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