MRF373ASR1 [MOTOROLA]
RF POWER FIELD EFFECT TRANSISTORS; 射频功率场效应晶体管
| 型号： | MRF373ASR1 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 文件： | 总8页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373A/D
The RF MOSFET Line
ꢀ
ꢁ
ꢂ
ꢃ
ꢄ
ꢅ
ꢆ
ꢁ
ꢇ
ꢅ
ꢈ
ꢉ
ꢊ
ꢋ
ꢋ
ꢅ
ꢌ
ꢍ
ꢎꢆ
ꢏ
ꢐ
ꢑ
ꢇ
ꢑ
ꢍ
ꢃ
ꢆ
ꢑ
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢖ
ꢕ
ꢀ
ꢘ
N–Channel Enhancement–Mode Lateral MOSFETs
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢖ
ꢕ
ꢙ
ꢀ
ꢘ
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
RF POWER MOSFETs
Power Gain — 18.2 dB
Efficiency — 60%
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
• Integrated ESD Protection
• Excellent Thermal Stability
ꢁ
• Characterized with Series Equivalent Large–Signal
CASE 360B–05, STYLE 1
NI–360
Impedance Parameters
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1
ꢀ
CASE 360C–05, STYLE 1
NI–360S
MRF373ASR1
ꢂ
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Drain–Source Voltage
Gate–Source Voltage
V
DSS
Vdc
Vdc
V
GS
– 0.5, +15
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF373AR1
P
D
197
1.12
278
Watts
W/°C
Watts
W/°C
C
MRF373ASR1
1.59
Storage Temperature Range
T
– 65 to +150
200
°C
°C
stg
Operating Junction Temperature
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373AR1
MRF373ASR1
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
R
0.89
0.63
°C/W
θ
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
Motorola, Inc. 2002
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
70
—
—
—
—
—
—
1
Vdc
µAdc
µAdc
(BR)DSS
(V = 0 Vdc, I =1 µA)
GS
D
Zero Gate Voltage Drain Current
(V = 32 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate–Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
2
2.9
3.3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
(V = 10 V, I = 200 µA)
DS
D
Gate Quiescent Voltage
(V = 32 V, I = 100 mA)
V
2.5
—
4.5
0.45
DS
D
Drain–Source On–Voltage
(V = 10 V, I = 3 A)
V
0.41
GS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
98.5
49
2
—
—
—
pF
pF
pF
iss
(V = 32 V, V = 0, f = 1 MHz)
DS
GS
Output Capacitance
(V = 32 V, V = 0, f = 1 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 32 V, V = 0, f = 1 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS (50 ohm system)
Common Source Power Gain
G
16.5
56
18.2
60
—
—
dB
%
ps
(V = 32 V, P = 75 W CW, I = 200 mA, f = 860 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 32 V, P = 75 W CW, I = 200 mA, f = 860 MHz)
DD
out
DQ
Load Mismatch
ψ
(V = 32 V, P = 75 W CW, I = 200 mA, f = 860 MHz,
No Degradation in Output Power
DD
out
DQ
Load VSWR at 10:1 at All Phase Angles)
MRF373AR1 MRF373ASR1
2
MOTOROLA RF DEVICE DATA
ꢆ ꢌ
ꢖ
ꢀ ꢀ
ꢃꢄ ꢅ
ꢃꢄ ꢌ
ꢖ
ꢁ
ꢁ
ꢃꢄ ꢋ
ꢆ
ꢋ
ꢃꢄ ꢇ
ꢃꢄ ꢍ
ꢃꢄ ꢎ
ꢏ ꢄ
ꢃꢇ
ꢆ ꢄ
ꢃꢄ
ꢃꢋ
ꢃ ꢄꢄ
ꢆ ꢑ ꢗꢘ ꢙꢚ ꢛ
ꢆ ꢑ ꢜ ꢚ ꢛꢙꢚ ꢛ
ꢃꢄ ꢊ
ꢃ
ꢎ
ꢃꢌ
ꢃ
ꢅ
ꢃꢍ
ꢃꢈ
ꢃ
ꢉ
ꢐꢆ ꢑꢌꢇ ꢌ ꢒ
ꢆꢓ ꢔꢕ ꢊꢄ
Figure 1. MRF373AR1/ASR1 Narrowband Test Circuit Component Layout
Table 1. MRF373AR1/ASR1 Narrowband Test Circuit Component Layout Designations and Values
Designation
Description
18 pF Chip Capacitors, B Case, ATC
C1, C2
C3
12 pF Chip Capacitor, B Case, ATC
C4
1.8 pF Chip Capacitor, B Case, ATC
C5, C10
C6
51 pF Chip Capacitors, B Case, ATC
0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS)
15 pF Chip Capacitor, B Case, ATC
C7
C8
10 pF Chip Capacitor, B Case, ATC
C9
2.7 pF Chip Capacitor, B Case, ATC
C11
0.5 pF Chip Capacitor, B Case, ATC
C12
C13
C14, C15
C16
C17
L1A
1000 pF Chip Capacitor, B Case, ATC
39 pF Chip Capacitor, B Case, ATC
470 pF Chip Capacitors, B Case, ATC
2.2 mF, 100 V Chip Capacitor, Vishay #VJ3640Y225KXBAT
10 mF, 35 V Tantalum Capacitor, Kemet #T491D106K35AS
12 nH, Coilcraft #A04T
R1, R2
R3
390 Ω, 1/2 Ω Chip Resistors, Vishay Dale (2010)
1 kΩ, 1/2 Ω Chip Resistor, Vishay Dale (2010)
MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55),
PCB
Height 30 mils, ε = 2.55
r
MOTOROLA RF DEVICE DATA
MRF373AR1 MRF373ASR1
3
TYPICAL CHARACTERISTICS
ꢋꢊ
ꢖ
ꢦ ꢌ ꢋ ꢖ ꢧꢨ
ꢁ
ꢮ ꢦ ꢉ ꢍꢊ ꢐꢰ ꢱ
ꢁ
ꢗ
ꢦ ꢎꢊ ꢊ ꢭ ꢒ
ꢬ
ꢁ
ꢄꢈ
ꢄꢉ
ꢅꢊ ꢊ ꢭ ꢒ
ꢌꢊ ꢊ ꢭ ꢒ
ꢋꢊ ꢊ ꢭ ꢒ
ꢄꢊ ꢊ ꢭ ꢒ
ꢄ
ꢇ
ꢄꢍ
ꢄꢎ
ꢄ
ꢄ ꢊ
ꢙ ꢟ ꢜ ꢚꢛꢙ ꢚꢛ ꢙ ꢜ ꢫꢠ ꢆ ꢡꢫꢒꢛꢛꢂ ꢣ ꢃꢫ
ꢥ ꢩꢪ
ꢄ ꢊꢊ
Figure 2. Power Gain versus Output Power
ꢌꢊ
ꢋꢎ
ꢋꢊ
ꢍ ꢋ
ꢍ ꢊ
ꢎ ꢉ
ꢖ
ꢙ
ꢦ ꢌꢋ ꢖ ꢧꢨ
ꢦ ꢇꢎ ꢫ ꢡ ꢃꢫ ꢣ
ꢁ
ꢁ
ꢪ
η
ꢥ
ꢩ
ꢗ
ꢁ
ꢦ ꢋꢊ ꢊ ꢭ ꢒ
ꢬ
ꢗ ꢆꢏ
ꢀ
ꢢ ꢞ
ꢄꢎ
ꢄꢊ
ꢎ
ꢎ ꢍ
ꢎ ꢅ
ꢎ ꢋ
ꢉ
ꢊ
ꢊ
ꢉ
ꢋ
ꢊ
ꢉ ꢅꢊ
ꢉ
ꢍ
ꢊ
ꢉ
ꢉ
ꢊ
ꢈ ꢊꢊ
ꢈ
ꢋ
ꢊ
ꢮ
ꢟ
ꢑ
ꢆ
ꢠ
ꢬ
ꢚ
ꢠ
ꢘ
ꢃ
ꢯ
ꢡ
ꢐ
ꢰ
ꢱ
ꢣ
Figure 3. Performance in Narrowband Circuit
ꢋꢊ ꢊ
ꢄꢎ ꢊ
ꢄꢊ ꢊ
ꢋ ꢊ
ꢄ ꢎ
ꢄ ꢊ
ꢃ
ꢤ ꢞ ꢞ
ꢃ
ꢃ
ꢥ
ꢞ
ꢞ
ꢎꢊ
ꢊ
ꢎ
ꢝ
ꢞ
ꢞ
ꢊ
ꢊ
ꢄ
ꢊ
ꢋ ꢊ
ꢟ ꢁꢆꢒ ꢗ ꢘ ꢂ ꢜ ꢚꢆꢃꢠ ꢖ ꢜ ꢏꢛꢒ ꢀ ꢠ ꢡꢖ ꢜ ꢏꢛꢂ ꢣ
ꢂ
ꢌ
ꢊ
ꢅ
ꢊ
ꢎ
ꢊ
ꢍ
ꢊ
ꢖ
ꢁ
Figure 4. Capacitance versus Voltage
MRF373AR1 MRF373ASR1
4
MOTOROLA RF DEVICE DATA
ꢮ ꢦ ꢉ ꢅꢎ ꢐꢰ ꢱ
ꢻ ꢦ ꢋ Ω
ꢥ
ꢻ
ꢤ
ꢴ
ꢮ ꢦ ꢉ ꢅꢎ ꢐꢰ ꢱ
ꢮ ꢦ ꢉ ꢇꢎ ꢐꢰ ꢱ
ꢻ
ꢼ
ꢜ ꢏ
ꢮ ꢦ ꢉ ꢇꢎ ꢐꢰ ꢱ
ꢖ
ꢁ
ꢦ ꢌ ꢋ ꢖ ꢟ ꢗ ꢦ ꢋ ꢊꢊ ꢭꢒ ꢟ ꢙ ꢦ ꢇ ꢎ ꢫ ꢃꢫ
ꢁ ꢬ ꢥ ꢩ ꢪ
ꢁ
f
Z
in
Z
OL
*
MHz
Ω
Ω
845
860
875
0.58 + j0.29
0.56 + j0.11
0.56 – j0.06
1.60 – j0.07
1.65 – j0.22
1.79 – j0.38
Z
Z
= Complex conjugate of the source impedance.
in
* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
OL
ꢘ ꢥꢪꢓ ꢺ
ꢻ ꢼ ꢸ ꢵꢞ ꢨꢶ ꢥꢞꢓ ꢴ ꢽ ꢵꢞꢓ ꢧ ꢥ ꢴ ꢪ ꢝꢵ ꢧ ꢓꢥ ꢮꢮ ꢞ ꢽ ꢓꢪ ꢸꢓ ꢓ ꢴ ꢷ ꢵꢤ ꢴꢟ ꢥ ꢩꢪ ꢢ ꢩ ꢪ
ꢜ ꢏ
ꢢꢥ ꢸꢓꢝꢟ ꢧ ꢝꢵ ꢤꢴ ꢓ ꢮꢮ ꢤꢨꢤ ꢓꢴ ꢨꢾ ꢵ ꢴꢧ ꢤꢴ ꢪ ꢓ ꢝꢭꢥ ꢧ ꢩꢿ ꢵꢪ ꢤ ꢥꢴ ꢧ ꢤꢞꢪ ꢥ ꢝꢪ ꢤꢥ ꢴ ꣀ
ꢜ ꢩ ꢪꢢ ꢩ ꢪ
ꢁꢓ ꢔꢤꢨꢓ
ꢗ ꢴꢢꢩ ꢪ
ꢐ ꢵꢪ ꢨꢶꢤ ꢴꢷ
ꢘꢓ ꢪ ꢸꢥꢝ ꢹ
ꢐꢵ ꢪ ꢨꢶ ꢤꢴ ꢷ
ꢘꢓ ꢪ ꢸꢥ ꢝꢹ
ꢚ
ꢴ
ꢧ
ꢓ
ꢝ
ꢛ
ꢓ
ꢞ
ꢪ
Z
Z
*
in
OL
Figure 5. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF373AR1 MRF373ASR1
5
NOTES
MRF373AR1 MRF373ASR1
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2X
Q
ꢐ
ꢐ
ꢐ
ꢲ
ꢘ
ꢜ
ꢛ
ꢠ
ꢗ
ꢙ
ꢂ
ꢺ
G
1
ꢵꢵ ꢵ
ꢛ ꢒ
B
ꢄ
ꣀ
ꢘ
ꢛ
ꢠ
ꢆ
ꢆ
ꢙ
ꢆ
ꢠ
ꢛ
ꢁ
ꢗ
ꢐ
ꢠ
ꢘ
ꢂ
ꢗ
ꢜ
ꢘ
ꢂ
ꣀ
ꢒ
ꢘꢁ
ꢛ
ꢜ
ꢏ
ꢠ
ꢆ
ꢒ
ꢘ
ꢃ
ꢠ
ꢂ
ꢠ
ꢒ
ꢂ
ꢐꢠ ꢯ ꢄꢅꣀ ꢎꢐꣁꢄ ꢈꢈꢅ
ꢋ
ꢌ
ꣀ
ꣀ
ꢃ
ꢁ
ꢜ
ꢘ
ꢠ
ꢛ
ꢘ
ꢆ
ꢂ
ꢜ
ꢏ
ꢏ
ꢘ
ꢗ
ꢘ
ꢰ
ꢀ
ꢗ
ꢁ
ꢗ
ꢐ
ꢠ
ꢠ
ꢒ
ꢘ
ꢂ
ꢂ
ꢚ
ꢗ
ꢜ
ꢘ
ꢁ
ꢺ
ꢗ
ꢘ
ꢃ
ꢊ
ꢰ
ꣀ
ꢗ
ꢐ
ꢗ
ꢜ
ꢂ
ꢐ
ꢆ
ꢠ
ꢊ
ꣀ
ꢌ
ꢊ
ꢡ
ꢊ
ꣀꢇ
ꢍ
ꢋ
ꢣ
ꢒ ꢫ ꢒꢯ
ꢑ
ꢆ
ꢜ
ꢐ
ꢙ
ꢒ
ꢃ
ꣂ
ꢒ
ꢀ
ꢠ
ꢲ
ꢜ
ꢁ
ꢯ
ꣀ
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
B
2
(FLANGE)
A
B
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꢇ
ꢋ
ꢄ
ꢋ
ꢊ
ꢊ
ꢈ
ꢋ
ꢋ
ꢄ
ꢎ
ꢊ
ꢎ
ꢎ
ꢎ
ꢊ
ꢎ
ꢅ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꢉ
ꢋ
ꢄ
ꢋ
ꢊ
ꢊ
ꢊ
ꢌ
ꢇ
ꢋ
ꢍ
ꢊ
ꢎ
ꢋ
ꢊꣀ ꢄꢈ
ꢎꣀ ꢇꢋ
ꢌꣀ ꢄꢉ
ꢎꣀ ꢌꢌ
ꢄꣀ ꢅꢊ
ꢊꣀ ꢄꢊ
ꢋ
ꢊꣀ ꢅ ꢎ
ꢎꣀ ꢈ ꢇ
ꢅꣀ ꢅ ꢎ
ꢎꣀ ꢎ ꢈ
ꢄꣀ ꢍ ꢎ
ꢊꣀ ꢄ ꢎ
2X K
ꢎ
ꢎ
ꢊ
ꢎ
ꢍ
2X D
ꢽ ꢽ ꢽ
C
ꢐ
ꢐ
ꢐ
ꢛ
ꢒ
ꢲ
R
D
(LID)
E
F
ꢐ
ꢐ
ꢐ
ꢲ
ꢨ
ꢨ
ꢨ
ꢛ
ꢒ
G
ꢊ
ꣀ
ꢎ
ꢍ
ꢋ
ꢕ
ꢲ
ꢂ
ꢃ
ꢄ
ꢅ
ꣀ
ꢍ
ꢈ
ꢋ
ꢇ
ꢉ
ꢇ
ꢋ
ꢋ
ꢉ
ꢕ
ꢲ
ꢂ
ꢋ
ꢍ
ꢈ
ꢈ
ꢌ
ꢎ
ꢎ
ꢃ
H
ꢊꣀ
ꢊꣀ
ꢊꣀ
ꢊꣀ
ꢊꣀ
ꢊꣀ
ꢊꣀ
ꢊ
ꢋ
ꢌ
ꢌ
ꢄ
ꢋ
ꢋ
ꢊ
ꢊ
ꢊ
ꢇ
ꢋ
ꢎ
ꢎ
ꢋ
ꢋ
ꢋ
ꣀ
ꣀ
ꣀ
ꢇ
ꢊ
ꣀ
ꢊ
ꢋ
ꢌ
ꢌ
ꢄ
ꢋ
ꢋ
ꢑ
ꢑ
ꢑ
ꢉ
ꢇ
ꢊ
ꢎ
ꢌ
ꢎ
ꢌ
ꢎ
ꢄ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꢈ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꢋ
ꢄ
ꢎ
ꢇ
ꢋ
ꢌ
ꢋ
ꢇ
F
K
ꢊ
ꢎ
ꢇ
ꢎ
ꢇ
ꢎ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꢊ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꣀ
ꢎ
ꢍ
ꢍ
ꢌ
ꢌ
ꢌ
ꢎ
ꢈ
ꢈ
ꢌ
ꢎ
ꢎ
ꢎ
ꢊ
ꢊ
ꢄ
ꢇ
ꢇ
ꢌ
ꢋ
ꢋ
ꢅ
ꢈ
ꢈ
H
ꢐ
ꢐ
ꢐ
ꢲ
M
ꢨꢨꢨ
ꢛ
ꢒ
N
N
(LID)
Q
C
E
R
S
aaa
bbb
ccc
ꢊ
ꢄ
ꢄ
ꢎ ꢕ
ꢊ ꢕ
ꢎ ꢕ
ꢆ ꢠ
ꢆ ꢠ
ꢆ ꢠ
ꢊꣀ
ꢊꣀ
ꢊꣀ
ꢄ
ꢋ
ꢌ
ꢌ
ꢎ
ꢉ
ꢕ
ꢕ
ꢕ
ꢆ
ꢆ
ꢆ
ꢠꢑ
ꢠꢑ
ꢠꢑ
S
(INSULATOR)
ꢐ
ꢐ
ꢐ
ꢲ
ꢵ
ꢵ
ꢵ
ꢛ
ꢒ
SEATING
PLANE
T
ꢂ
ꢛ
ꢯ
ꢏ
ꢠ
ꢄ
ꢺ
ꢙ
ꢗ
ꢘ
ꢄ
ꢋ
ꢌ
ꣀ
ꣀ
ꣀ
ꢁ ꢆ ꢒꢗ ꢘ
ꢀ ꢒꢛ ꢠ
ꢂ ꢜꢚ ꢆ ꢃ ꢠ
ꢐ
ꢐ
ꢐ
ꢲ
ꢽ
ꢽ
ꢽ
ꢛ
ꢒ
M
(INSULATOR)
CASE 360B–05
ISSUE F
A
A
NI–360
MRF373AR1
A
A
(FLANGE)
B
B
1
2
ꢘ ꢜ ꢛꢠ ꢂ ꢺ
ꣀ
ꢄ
ꢗ
ꢘ
ꢛ
ꢆ
ꢘ
ꢠ
ꢆ
ꢙ
ꢆ
ꢠ
ꢛ
ꢁ
ꢗ
ꢐ
ꢠ
ꢘ
ꢂ
ꢗ
ꢐꢠ ꢯ ꢄꢅꣀ ꢎꢐꣁꢄ ꢈꢈꢅꣀ
ꢜ
ꢘ
ꢂ
ꢒ
ꢘ
ꢁ
ꢛ
ꢜ
ꢏ
ꢠ
ꢆ
ꢒ
ꢘ
ꢃ
ꢠ
ꢂ
ꢙ
ꢃ
ꢁ
ꢠ
ꢜ
ꢒ
ꢂ
ꢋ
ꢌ
ꣀ
ꣀ
ꢛ
ꢠ
ꢆ
ꢘ
ꢜ
ꢂ
ꢏ
ꢏ
ꢘ
ꢗ
ꢘ
ꢀ
ꢁ
ꢂ
ꢗ
ꢐ
ꢐ
ꢠ
ꢠ
ꢒ
ꢘ
ꢂ
ꢗ
ꢜ
ꢘ
ꢺ
ꢗ
ꢘ
ꢃ
ꢰ
ꣀ
ꢊ
2X K
(FLANGE)
ꢗ
ꢐ
ꢗ
ꢜ
ꢰ
ꢗ
ꢂ
ꢚ
ꢆ
ꢠ
ꢁ
ꢊ
ꣀ
ꢊ
ꢌ
ꢡ
ꢊ
ꣀ
ꢇ
ꢍ
ꢋ
ꢣ
ꢒ
ꢫ
ꢒ
ꢯ
2X D
ꢑ
ꢆ
ꢜ
ꢐ
ꢙ
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ꢁ
ꢯ
ꣀ
ꢐ
ꢐ
ꢐ
ꢽ
ꢽ
ꢽ
ꢛ
ꢒ
ꢲ
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
R
(LID)
A
B
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ꢊ
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ꢎꣀ ꢈꢇ
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N
F
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ꢍ
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C
S
R
(INSULATOR)
S
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aaa
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ꢲ
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PLANE
PIN 3
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T
M
(INSULATOR)
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ꢐ
ꢐ
ꢐ
ꢽ ꢽꢽ
ꢛ ꢒ
ꢲ
ꢙ
ꢗꢘ
ꢄꣀ
ꢋꣀ
ꢌꣀ
ꢁ ꢆ ꢒꢗ ꢘ
ꢀ ꢒꢛ ꢠ
ꢂ ꢜꢚ ꢆ ꢃ ꢠ
CASE 360C–05
ISSUE D
NI–360S
MRF373ASR1
MOTOROLA RF DEVICE DATA
MRF373AR1 MRF373ASR1
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF373A/D
◊
相关型号：
MRF373S
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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