MRF373R1 [MOTOROLA]
RF POWER FIELD EFFECT TRANSISTORS; 射频功率场效应晶体管
| 型号： | MRF373R1 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 文件： | 总12页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373/D
The RF MOSFET Line
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ
N–Channel Enhancement–Mode Lateral MOSFETs
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢖ
ꢀ
ꢘ
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢖ
ꢙ
ꢀ
ꢘ
Designed for broadband commercial and industrial applications with frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28 volt transmitter equipment.
470 – 860 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
ꢁ
• Excellent Thermal Stability
CASE 360B–05, STYLE 1
NI–360
• 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
MRF373R1
• In Tape and Reel. R1 = 500 units per 32 mm,
13 inch Reel.
ꢀ
CASE 360C–05, STYLE 1
NI–360S
ꢂ
MRF373SR1
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Drain–Source Voltage
Gate–Source Voltage
V
DSS
Vdc
Vdc
Adc
V
GS
20
Drain Current – Continuous
I
D
7
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF373SR1
P
D
173
1.33
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
– 65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
Max
0.75
1
Unit
°C/W
°C/W
MRF373SR1
MRF373R1
R
R
θ
θ
JC
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
Motorola, Inc. 2002
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
65
–
–
–
–
–
1
1
Vdc
µAdc
µAdc
(BR)DSS
(V = 0 Vdc, I =1 µA)
GS
D
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate–Source Leakage Current
(V = 20 Vdc, V = 0 Vdc)
I
–
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
2
3
3
4
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 V, I = 200 µA)
DS
D
Gate Quiescent Voltage
(V = 28 V, I = 100 mA)
V
4
DS
D
Drain–Source On–Voltage
(V = 10 V, I = 3 A)
V
–
0.6
2.9
0.8
–
GS
D
Forward Transconductance
(V = 10 V, I = 3 A)
g
fs
2.2
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
79
46
4
–
–
–
pF
pF
pF
iss
(V = 28 V, V = 0, f = 1 MHz)
DS
GS
Output Capacitance
(V = 28 V, V = 0, f = 1 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 28 V, V = 0, f = 1 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain
G
13
50
14.7
54
–
–
dB
%
ps
(V = 28 V, P = 60 W, I = 200 mA, f = 860 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 28 V, P = 60 W, I = 200 mA, f = 860 MHz)
DD
out
DQ
Load Mismatch
ψ
(V = 28 V, P = 60 W, I = 200 mA, f = 860 MHz,
No Degradation in Output Power
DD
out
DQ
Load VSWR at 5:1 at All Phase Angles)
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(V = 28 Vdc, P = 100 W PEP, I = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
G
–
–
–
11.2
40
–
–
–
dB
%
ps
DD
out
DQ
Drain Efficiency
η
(V = 28 Vdc, P = 100 W PEP, I = 400 mA,
DD
out
DQ
f1 = 860.0 MHz, f2 = 866 MHz)
Third Order Intermodulation Distortion
IMD
–30
dBc
(V = 28 Vdc, P = 100 W PEP, I = 400 mA,
DD
out
DQ
f1 = 860.0 MHz, f2 = 866 MHz)
MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ꢋ
ꢁ ꢁ
ꢋ
ꢀ ꢀ
ꢌꢐ ꢔ
ꢌꢐꢐ
ꢌ ꢐꢏ
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ꢃ ꢐ
ꢌꢐ ꢖ
ꢌ ꢐꢒ
ꢌ ꢐꢓ
ꢘ ꢐ
ꢌꢒ
ꢌꢐ
ꢃ ꢄ
ꢊ ꢈ ꢉꢇꢈ ꢉ
ꢑꢐ ꢏ
ꢑ
ꢎ
ꢑꢍ
ꢑ
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ꢑꢐ ꢔ
ꢑꢐꢐ
ꢃ ꢄ
ꢅꢆ ꢇꢈ ꢉ
ꢌ
ꢎ
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ꢌ
ꢓ
ꢌ
ꢕ
ꢌ
ꢍ
ꢌ
ꢗ
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C1
C2
C3
4.7 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
6.8 pF, B Case Chip Capacitor, ATC
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, ε = 2.55
r
C4, C5, C6 10 pF, B Case Chip Capacitor, ATC
Heatsink
Insert
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3″ x 5″ Bedstead
Motorola P/N 95–11LDMOSKPS–2
Insert for LDMOS m250 3″ x 5″ Bedstead
C7, C8
C9
47 pF, B Case Chip Capacitor, ATC
0.2 pF, B Case Chip Capacitor, ATC
C10, C13
C11
C12
C14
C15
L1
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 50 V, Kemet P/N C1825C225
22 mF, 50 V, Kemet P/N T491D226K50AS
2) 1.0 mF, 50 V, Kemet P/N C1825C105
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
R1
R2
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
2) H.H. Smith P/N SM–101
Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373R1)
ꢉ ꢊ ꢀ ꢙꢉ ꢜ
ꢚꢅꢙ ꢂ ꢂꢈ ꢇꢇꢘꢛ
ꢉꢊ ꢁ ꢃꢙ ꢅꢆ
ꢚꢅ ꢙꢂ ꢂꢈ ꢇꢇ ꢘꢛ
ꢃ
ꢏ
ꢌ
ꢐ
ꢒ
ꢌ
ꢐ
ꢖ
ꢌ
ꢐ
ꢐ
ꢌ
ꢐ
ꢏ
ꢌ
ꢐ
ꢓ
ꢌꢐ ꢔ
ꢘ ꢐ
ꢌꢒ
ꢌꢖ
ꢃ ꢐ
ꢌꢐ
ꢌ ꢍ
ꢌꢎ
ꢌꢓ
ꢌꢏ
ꢌ ꢕ
ꢌ ꢗ
MRF373
Figure 2. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373R1)
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
3
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Figure 3. MRF373R1 Narrowband Test Fixture Photo
ꢋ
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ꢌꢏ ꢒ
ꢌꢏ ꢓ
ꢘ ꢐ
ꢌꢎ
ꢌ
ꢐ
ꢃ ꢄ
ꢊ ꢈ ꢉꢇꢈ ꢉ
ꢑꢐ ꢗ
ꢑꢐ ꢔ
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ꢐ
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ꢑꢐ ꢏ
ꢑ
ꢐ
ꢓ
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ꢐ
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ꢃ ꢄ
ꢅ ꢆ ꢇꢈꢉ
ꢌ
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ꢑ
ꢐ
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ꢐ
ꢌ
ꢕ
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C1, C2
C3
18 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
C4, C11
C5, C10
C6
C7
C8
0.8 pF, B Case Chip Capacitor, ATC
68 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
(GX–0300–55), height 30 mils, ε = 2.55
r
(new PCB’s available from CMR)
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3″ x 5″ Bedstead
Motorola P/N 95–11LDMOSKPS–2S
Insert for LDMOS m250S 3″ x 5″ Bedstead
Heatsink
Insert
C9
C20, C23
C21
C24
C22
C25
L1
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT
2) 1.0 mF, 50 V, Kemet P/N C1825C105
22 mF, 35 V, Kemet P/N T491D226K35AS
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
R1
R2
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373SR1)
MRF373R1 MRF373SR1
4
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ꢉ ꢊ ꢀ ꢙꢉ ꢜ
ꢚꢅꢙ ꢂ ꢂꢈ ꢇꢇꢘꢛ
ꢉꢊ ꢁ ꢃꢙ ꢅꢆ
ꢚꢅ ꢙꢂ ꢂꢈ ꢇꢇ ꢘꢛ
ꢃ ꢏ
ꢌꢏ ꢒ
ꢌꢏ ꢖ
ꢌꢏ ꢐ
ꢌ
ꢏ
ꢏ
ꢌꢏ ꢓ
ꢌꢏ ꢔ
ꢘ ꢐ
ꢃꢐ
ꢌꢎ
ꢌꢐ
ꢌ ꢐꢔ
ꢌ
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ꢌꢓ
ꢌꢏ
ꢌꢒ
ꢌ
ꢗ
ꢌ ꢐꢐ
ꢌ
ꢕ
ꢌ
ꢍ
MRF373S
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373SR1)
Figure 6. MRF373SR1 Narrowband Test Circuit Photo
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
5
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS FOR MRF373R1 IN SINGLE–ENDED FIXTURE
ꢐꢍ
ꢐꢎ
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ꢐꢓ
ꢏ ꢏ
ꢖ ꢍ
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ꢖ ꢗ
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ꢖ ꢔ
ꢋ
ꢱ ꢏꢍ ꢋ
ꢬ ꢱ ꢍꢗ ꢔ ꢮ ꢯꢰ
ꢁ ꢁ
ꢅ ꢃꢘ
η
ꢋ
ꢅ
ꢱ ꢏ ꢍ ꢋ
ꢁ ꢁ
ꢱ ꢏ ꢔꢔ ꢫꢙ
ꢱ ꢗ ꢔ ꢩ ꢟꢌ ꢩꢠ
ꢏ ꢔ
ꢐ ꢍ
ꢐ ꢗ
ꢐ ꢒ
ꢐ ꢏ
ꢐ ꢔ
ꢍ
ꢁ ꢭ
ꢇ
ꢥ ꢧ ꢨ
ꢅ
ꢱ ꢖ ꢔꢔ ꢫꢙ
ꢁ ꢭ
ꢒ ꢔꢔ ꢫꢙ
ꢓ ꢔꢔ ꢫꢙ
ꢀ
ꢢ
ꢏ ꢔꢔ ꢫꢙ
ꢐ ꢔꢔ ꢫꢙ
ꢗ
ꢓ ꢔ
ꢓ ꢖ
ꢒꢔ
ꢒꢖ
ꢖ ꢔ
ꢍ ꢔꢔ
ꢍ
ꢏ
ꢔ
ꢍ
ꢒ
ꢔ
ꢍ
ꢗ
ꢔ
ꢍ ꢍꢔ
ꢕ
ꢔ
ꢔ
ꢕ
ꢏ
ꢔ
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ꢥꢧ ꢨ
ꢬ
ꢝ
ꢄ
ꢃ
ꢜ
ꢭ
ꢈ
ꢜ
ꢆ
ꢌ
ꢛ
ꢟ
ꢮ
ꢯ
ꢰ
ꢠ
Figure 7. Power Gain versus Output Power
Figure 8. Performance in Narrowband Circuit
ꢐꢏ ꢔ
ꢐꢔ ꢔ
ꢍꢔ
ꢗꢔ
ꢒꢔ
ꢏꢔ
ꢔ
ꢌ
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ꢤ
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ꢥꢤ ꢤ
ꢌ
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ꢤ
ꢤ
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ꢏ
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ꢋ
ꢁ ꢂ
ꢝ
ꢁ
ꢃ
ꢙ
ꢅ
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ꢞ
ꢂ
ꢊ
ꢈ
ꢃ
ꢌ
ꢜ
ꢋ
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ꢘ
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ꢙ
ꢀ
ꢜ
ꢟ
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Figure 9. Capacitance versus Voltage
Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A)
S
11
S
21
S
12
S
22
f
|S
|
∠ φ
182
181
180
179
178
177
176
176
175
174
173
|S
|
∠ φ
52
49
46
42
38
35
31
28
26
24
24
|S
|
∠ φ
39
53
64
72
78
81
82
82
82
80
78
|S |
22
∠ φ
MHz
400
450
500
550
600
650
700
750
800
850
900
11
21
12
0.921
0.922
0.924
0.926
0.929
0.932
0.936
0.940
0.945
0.951
0.957
2.23
1.95
1.70
1.49
1.31
1.16
1.03
0.93
0.84
0.78
0.72
0.009
0.009
0.010
0.011
0.013
0.015
0.017
0.019
0.021
0.023
0.025
0.824
0.832
0.841
0.851
0.860
0.870
0.881
0.892
0.904
0.917
0.929
184
184
184
183
183
182
182
181
180
180
179
MRF373R1 MRF373SR1
6
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ꢌꢐ ꢕ ꢙ
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ꢃꢗ
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ꢘꢓ ꢙ
ꢌ ꢐꢗꢙ
ꢃꢎ ꢙ
ꢌꢏ
ꢌ
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ꢌ ꢗ
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ꢘꢐ ꢚ
ꢘ
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ꢘꢓ ꢚ
ꢃ ꢏꢚ
ꢌ
ꢐ
ꢗ
ꢚ
ꢌ
ꢐ
ꢎ
ꢚ
MRF373S
ꢌ
ꢐ
ꢕ
ꢚ
Vertical Balun Mounting Detail
ꢮꢥ ꢨ ꢥ ꢦꢥ ꢶꢴ ꢋꢵ ꢦꢨ ꢣꢸꢴ ꢶ ꢗ ꢗꢔ ꢮꢯ ꢰ ꢚ ꢴꢶ ꢧꢺ
ꢃꢥ ꢻ ꢵꢦ ꢤ ꢃꢊ ꢓ ꢔꢐ ꢔ ꢟꢖ ꢔ ꢫꢣ ꢶ ꢨ ꢷ ꢣꢸꢹꢠ
ꢊ ꢧꢨ ꢢꢧꢨ ꢏ
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ꢟꢖ ꢔ ꢥ ꢷꢫ ꢫꢣ ꢸꢦꢥ ꢤꢨ ꢦꢣꢢ ꢠ
ꢆ
ꢥ
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ꢵ
ꢽ
ꢉꢦ ꢣꢫ ꢚꢴ ꢶꢧ ꢺ ꢇꢌꢚ ꢤꢥ ꢨ ꢷꢴꢨ ꢴ ꢓꢖ ꢫ ꢣꢶ ꢾ ꢨ ꢴꢳꢿ
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ꢣꢺ ꢚꢴ ꢶꢧ ꢺ ꢤꢥ ꢶꢪꢵ ꢦ ꢢꢴ ꢪꢤ ꢳꢵ ꢣꢺ ꢻ ꢶ ꢵꣀꢵꢶ ꣁꢣ ꢨ ꢷ
ꢨꢷ ꢵ ꢇꢌ ꢚ ꢤꢧ ꢳꢤꢨ ꢦ ꢴꢨ ꢵ ꢤꢥꢶ ꢪꢵ ꢦ ꢢꢴ ꢪꢤ ꣁ ꢷꢵꢺ
ꢬꢧ ꢶꢶ ꣂ ꢣꢺ ꢤꢵ ꢦ ꢨꢵ ꢪꢼ
ꢖ ꢖ ꢫꢣ ꢶ ꢤꢶꢥ ꢨ ꢸꢧ ꢨ
ꢥ ꢧꢨ ꢨ ꢥ ꢴ ꢸꢸꢵꢢ ꢨ ꢚ ꢴꢶ ꢧꢺ
ꢀ
ꢦ
ꢥ
ꢧ
ꢺ
ꢪ
Figure 10. MRF373SR1 Broadband Push–Pull Component Layout
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
7
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Table 2. MRF373SR1 Broadband Push–Pull Application Parts List
Designation
Description
1.0 pF, AVX, P12101J1R0BBT
C1
C2, C4, C10
C3A, B
10 pF, AVX, P12101J100GBT
120 pF, 300 V, AVX, AQ149M121JAJBE
12 pF, AVX, P12101J120GBT
C5, C6, C9
C7, C8
18 pF, AVX, P12101J180GBT
C11
6.8 pF, AVX, P12101J6R8BBT
C12
4.7 pF, AVX, P12101J4R7BBT
C13, C18A, B
C14A, B
C15
3.3 pF, AVX, P12101J3R3BBT
100 pF, 500 V, AVX, AQ147M101JAJBE
2.7 pF, AVX, P12101J2R7BBT
C16A, B
C17A, B, C19A, B
L1A, B, L3A, B, L4, L5
L2, L6
3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT
22 mF, 35 V, Kemet P/N T491D226K35AS
8.0 nH, Coilcraft P/N A03T
12.5 nH, Coilcraft P/N A04T
R1A, B
22 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
10 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
390 Ω, Vishay Dale Chip Resistor (1206)
2.4 kΩ, Vishay Dale Chip Resistor (1206)
470 Ω Thermistor, KOA SPEER MOT P/N 0680149M01
MRF373 PP Printed Circuit Board Rev 2C,
R2A, B
R3
R4
R5T
PCB
Rogers RO4350, Height 30 mils, ε = 3.48
ꢦ
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01,
Rogers RO3010, Height 50 mils, ε = 10.2
ꢦ
MRF373R1 MRF373SR1
8
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
ꢞ ꢐꢔ
ꢞ ꢐꢖ
ꢞ ꢏꢔ
ꢞ ꢏꢖ
ꢞ ꢓꢔ
ꢞ ꢓꢖ
ꢞ ꢒꢔ
ꢐ ꢖ
ꢋ
ꢱ ꢏ ꢍ ꢋ ꢪꢸ
Dꢄꢃꢜ ꢭ ꢈꢜ ꢆꢌ ꢛ ꢱ ꢗ ꢮꢯ ꢰ
ꢁ ꢁ
ꢋ
ꢱ ꢏ ꢍ ꢋꢪꢸ
Dꢄ ꢃ ꢜꢭ ꢈ ꢜꢆ ꢌꢛ ꢱ ꢗ ꢮ ꢯꢰ
ꢁ ꢁ
ꢐ ꢒ
ꢐ ꢓ
ꢐ ꢏ
ꢐ ꢐ
ꢐ ꢔ
ꢅ
ꢱ ꢏ ꢖꢔ ꢫꢙ ꢢ ꢵꢦ ꢤꢣꢪ ꢵ
ꢁ ꢭ
ꢅ
ꢱ ꢏ ꢖꢔ ꢫ ꢙ ꢢꢵ ꢦ ꢤꢣ ꢪꢵ
ꢁ ꢭ
ꢍ ꢗꢔ ꢮꢯ ꢰ
ꢒꢎ ꢔ ꢮ ꢯꢰ
ꢗꢗ ꢔ ꢮ ꢯꢰ
ꢍꢗ ꢔ ꢮ ꢯꢰ
ꢐꢔ
ꢗ ꢗꢔ ꢮꢯ ꢰ
ꢒ ꢎꢔ ꢮꢯ ꢰ
ꢕ
ꢍ
ꢞ ꢒꢖ
ꢞ ꢖꢔ
ꢐ
ꢐꢔ ꢔ
ꢐ ꢔꢔ ꢔ
ꢐ
ꢐ ꢔ
ꢇ ꢝ ꢊ ꢈꢉꢇ ꢈꢉ ꢇ ꢊ ꢩꢜ ꢃ ꢟꢩꢙꢉꢉꢂ ꢠ ꢇ ꢜ ꢇ
ꢥ ꢧ ꢨ
ꢐ ꢔꢔ
ꢐ ꢔ ꢔꢔ
ꢇ ꢝ ꢊ ꢈꢉ ꢇꢈ ꢉ ꢇ ꢊꢩꢜ ꢃ ꢟ ꢩꢙꢉꢉ ꢂꢠ ꢇ ꢜꢇ
ꢥ ꢧꢨ
Figure 11. Intermodulation Distortion versus Output
Power (MRF373S Broadband Push–Pull Fixture)
Figure 12. Broadband Power Gain versus Output
Power (MRF373S Broadband Push–Pull Fixture)
ꢖ
ꢔ
ꢋ
ꢱ
ꢏ
ꢍ
ꢋ
ꢪ
ꢸ
ꢁ ꢁ
ꢍ ꢗꢔ ꢮꢯ ꢰ
ꢗ ꢗꢔ ꢮꢯ ꢰ
Dꢄꢃ ꢜꢭ ꢈꢜ ꢆꢌꢛ ꢱ ꢗ ꢮꢯ ꢰ
ꢱ ꢏꢖ ꢔ ꢫꢙ ꢢ ꢵꢦ ꢤꢣꢪ ꢵ
ꢒꢔ
ꢓꢔ
ꢏꢔ
ꢅ
ꢁ ꢭ
ꢒ ꢎꢔ ꢮꢯ ꢰ
ꢐꢔ
ꢔ
ꢐ
ꢐ
ꢔ
ꢐ ꢔꢔ
ꢐ
ꢔ
ꢔ
ꢔ
ꢇ ꢝ ꢊ ꢈꢉꢇ ꢈꢉ ꢇ ꢊ ꢩꢜ ꢃ ꢟꢩꢙꢉꢉꢂ ꢠ ꢇ ꢜ ꢇ
ꢥ ꢧ ꢨ
Figure 13. Efficiency versus Output Power
(MRF373S Broadband Push–Pull Fixture)
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
9
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
NOTES
MRF373R1 MRF373SR1
10
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
2X
Q
ꢮ
ꢮ
ꢮ
ꢚ
G
1
ꢴꢴ ꢴ
ꢉ ꢙ
ꢆ ꢊ ꢉꢜ ꢂ ꢽ
ꢐꢼ ꢅ ꢆ ꢉꢜ ꢃ ꢇꢃ ꢜ ꢉ ꢁ ꢅ ꢮꢜꢆ ꢂ ꢅꢊ ꢆ ꢂ ꢙ ꢆ ꢁ ꢉꢊ ꢘ ꢜꢃ ꢙꢆ ꢌ ꢜꢂ
ꢇ ꢜꢃ ꢙ ꢂꢮꢜ ꢛ ꢐꢒꢼ ꢖꢮꢞꢐ ꢕꢕꢒꢼ
B
ꢏꢼ ꢌ ꢊ ꢆ ꢉꢃ ꢊ ꢘꢘ ꢅꢆ ꢀ ꢁ ꢅ ꢮꢜꢆ ꢂ ꢅꢊ ꢆ ꢽ ꢅ ꢆꢌ ꢯ ꢼ
ꢓꢼ ꢁ ꢅ ꢮꢜꢆ ꢂ ꢅꢊ ꢆ ꢯ ꢅ ꢂ ꢮꢜ ꢙꢂ ꢈ ꢃ ꢜꢁ ꢔꢼꢔ ꢓ ꢔ ꢟꢔ ꢼꢎ ꢗꢏ ꢠ ꢙꢩ ꢙꢛ
ꢄ ꢃ ꢊꢮ ꢇꢙ ꢌꣃ ꢙ ꢀ ꢜ ꢚ ꢊꢁ ꢛꢼ
3
INCHES
DIM MIN MAX
MILLIMETERS
B
MIN
ꢏꢔꢼ ꢐꢕ
ꢖꢼꢎ ꢏ
ꢓꢼꢐ ꢍ
ꢖꢼꢓ ꢓ
ꢐꢼꢒ ꢔ
ꢔꢼꢐ ꢔ
MAX
ꢏ ꢔꢼ ꢒꢖ
ꢖ ꢼꢕ ꢎ
ꢒ ꢼꢒ ꢖ
ꢖ ꢼꢖ ꢕ
ꢐ ꢼꢗ ꢖ
ꢔ ꢼꢐ ꢖ
2
(FLANGE)
A
B
ꢔꢼ ꢎꢕꢖ
ꢔꢼ ꢏꢏꢖ
ꢔꢼ ꢐꢏꢖ
ꢔꢼ ꢏꢐꢔ
ꢔꢼ ꢔꢖꢖ
ꢔꢼ ꢔꢔꢒ
ꢔꢼ ꢍꢔꢖ
ꢔꢼ ꢏꢓꢖ
ꢔꢼ ꢐꢎꢖ
ꢔꢼ ꢏꢏꢔ
ꢔꢼ ꢔꢗꢖ
ꢔꢼ ꢔꢔꢗ
R
2X K
(LID)
2X D
ꢳ ꢳꢳ
C
ꢮ
ꢮ
ꢮ
ꢚ
ꢉ ꢙ
ꢮ
ꢮ
ꢮ
ꢚ
D
ꢸꢸꢸ
ꢉ ꢙ
E
F
F
G
ꢔꢼ ꢖꢗꢏ ꢡꢚ ꢂꢌ
ꢐ ꢒꢼ ꢏꢍ ꢡꢚꢂ ꢌ
H
H
ꢔꢼ ꢔꢎꢎ
ꢔꢼ ꢏꢏꢔ
ꢔꢼ ꢓꢖꢖ
ꢔꢼ ꢓꢖꢎ
ꢔꢼ ꢐꢏꢖ
ꢔꢼ ꢏꢏꢎ
ꢔꢼ ꢏꢏꢖ
ꢔꢼ ꢔꢍꢎ
ꢔꢼ ꢏꢖꢔ
ꢔꢼ ꢓꢗꢖ
ꢔꢼ ꢓꢗꢓ
ꢔꢼ ꢐꢓꢖ
ꢔꢼ ꢏꢓꢓ
ꢔꢼ ꢏꢓꢖ
ꢐꢼꢕ ꢗ
ꢖꢼꢖ ꢕ
ꢕꢼꢔ ꢏ
ꢕꢼꢔ ꢎ
ꢓꢼꢐ ꢍ
ꢖꢼꢎ ꢎ
ꢖꢼ ꢎ ꢏ
ꢏ ꢼꢏ ꢐ
ꢗ ꢼꢓ ꢖ
ꢕ ꢼꢏ ꢎ
ꢕ ꢼꢏ ꢏ
ꢓ ꢼꢒ ꢓ
ꢖ ꢼꢕ ꢏ
ꢖ ꢼꢕ ꢎ
K
M
ꢮ
ꢮ
ꢮ
ꢚ
ꢸꢸꢸ
ꢉ ꢙ
N
N
(LID)
Q
S
R
C
E
(INSULATOR)
S
aaa
bbb
ccc
ꢔꢼ ꢔꢔꢖ ꢡꢃ ꢜ ꢄ
ꢔꢼ ꢔꢐꢔ ꢡꢃ ꢜ ꢄ
ꢔꢼ ꢔꢐꢖ ꢡꢃ ꢜ ꢄ
ꢔ ꢼꢐ ꢓꢡꢃ ꢜ ꢄ
ꢔ ꢼꢏ ꢖꢡꢃ ꢜ ꢄ
ꢔ ꢼꢓ ꢍꢡꢃ ꢜ ꢄ
ꢮ
ꢮ
ꢮ
ꢚ
ꢴ
ꢴ
ꢴ
ꢉ
ꢙ
SEATING
PLANE
ꢂ
ꢉ
ꢛ
ꢘ
ꢜ
ꢐ
ꢽ
T
ꢇ ꢅꢆ ꢐꢼ ꢁ ꢃ ꢙꢅ ꢆ
ꢏꢼ ꢀ ꢙꢉ ꢜ
ꢓꢼ ꢂ ꢊꢈ ꢃ ꢌ ꢜ
ꢮ
ꢮ
ꢮ
ꢳ
ꢳ
ꢳ
ꢉ
ꢙ
ꢚ
CASE 360B–05
ISSUE F
M
(INSULATOR)
NI–360
A
A
MRF373R1
A
A
(FLANGE)
ꢆ ꢊ ꢉꢜ ꢂ ꢽ
ꢐꢼ ꢅ ꢆ ꢉꢜ ꢃ ꢇꢃ ꢜ ꢉ ꢁ ꢅ ꢮꢜꢆ ꢂ ꢅꢊ ꢆ ꢂ ꢙ ꢆ ꢁ ꢉꢊ ꢘ ꢜꢃ ꢙꢆ ꢌ ꢜꢂ
ꢇ ꢜꢃ ꢙ ꢂꢮꢜ ꢛ ꢐꢒꢼ ꢖꢮꢞꢐ ꢕꢕꢒꢼ
ꢏꢼ ꢌ ꢊ ꢆ ꢉꢃ ꢊ ꢘꢘ ꢅꢆ ꢀ ꢁ ꢅ ꢮꢜꢆ ꢂ ꢅꢊ ꢆ ꢽ ꢅꢆ ꢌ ꢯ ꢼ
ꢓꢼ ꢁ ꢅ ꢮꢜꢆ ꢂ ꢅꢊ ꢆ ꢯ ꢅ ꢂ ꢮꢜ ꢙꢂ ꢈ ꢃ ꢜꢁ ꢔ ꢼꢔ ꢓꢔ ꢟꢔ ꢼꢎ ꢗꢏ ꢠ ꢙꢩ ꢙꢛ
ꢄ ꢃ ꢊꢮ ꢇꢙ ꢌꣃ ꢙ ꢀ ꢜ ꢚ ꢊꢁ ꢛꢼ
B
B
1
2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
ꢕꢼꢖ ꢓ
ꢖꢼꢎ ꢏ
ꢏꢼꢗ ꢎ
ꢖꢼꢓ ꢓ
ꢔꢼꢍ ꢕ
ꢔꢼꢐ ꢔ
ꢐ ꢼꢒ ꢖ
ꢏꢼꢐ ꢗ
ꢕꢼꢔ ꢏ
ꢕꢼꢔ ꢎ
ꢖꢼꢎ ꢎ
ꢖꢼꢎ ꢏ
MAX
ꢕ ꢼꢎ ꢍ
ꢖ ꢼꢕ ꢎ
ꢓ ꢼꢕ ꢒ
ꢖ ꢼꢖ ꢕ
ꢐ ꢼꢐ ꢒ
ꢔ ꢼꢐ ꢖ
ꢐ ꢼꢎ ꢔ
ꢏ ꢼꢕ ꢏ
ꢕ ꢼꢏ ꢎ
ꢕ ꢼꢏ ꢏ
ꢖ ꢼꢕ ꢏ
ꢖ ꢼꢕ ꢎ
2X K
(FLANGE)
A
B
ꢔꢼ ꢓꢎꢖ
ꢔꢼ ꢏꢏꢖ
ꢔꢼ ꢐꢔꢖ
ꢔꢼ ꢏꢐꢔ
ꢔꢼ ꢔꢓꢖ
ꢔꢼ ꢔꢔꢒ
ꢔꢼ ꢔꢖꢎ
ꢔꢼ ꢔꢍꢖ
ꢔꢼ ꢓꢖꢖ
ꢔꢼ ꢓꢖꢎ
ꢔꢼ ꢏꢏꢎ
ꢔꢼ ꢏꢏꢖ
ꢔꢼ ꢓꢍꢖ
ꢔꢼ ꢏꢓꢖ
ꢔꢼ ꢐꢖꢖ
ꢔꢼ ꢏꢏꢔ
ꢔꢼ ꢔꢒꢖ
ꢔꢼ ꢔꢔꢗ
ꢔꢼ ꢔꢗꢎ
ꢔꢼ ꢐꢐꢖ
ꢔꢼ ꢓꢗꢖ
ꢔꢼ ꢓꢗꢓ
ꢔꢼ ꢏꢓ
2X D
R
C
ꢮ
ꢮ
ꢮ
ꢳ
ꢳ
ꢳ
ꢉ
ꢙ
ꢚ
(LID)
D
E
ꢮ
ꢮ
ꢮ
ꢸ
ꢸ
ꢸ
ꢉ
ꢙ
ꢚ
F
F
H
H
K
M
N
N
R
(LID)
S
ꢔ
ꢼ
ꢏ
ꢓ
ꢖ
ꢮ
ꢮ
ꢮ
ꢚ
ꢸ
ꢸ
ꢸ
ꢉ
ꢙ
aaa
bbb
ccc
ꢔꢼ ꢔꢔꢖ ꢡꢃ ꢜ ꢄ
ꢔꢼ ꢔꢐꢔ ꢡꢃ ꢜ ꢄ
ꢔꢼ ꢔꢐꢖ ꢡꢃ ꢜ ꢄ
ꢔ ꢼꢐ ꢓꢡꢃ ꢜ ꢄ
ꢔ ꢼꢏ ꢖꢡꢃ ꢜ ꢄ
ꢔ ꢼꢓ ꢍꢡꢃ ꢜ ꢄ
S
(INSULATOR)
E
ꢂ
ꢉ
ꢛ
ꢘ
ꢜ
ꢐ
ꢽ
ꢮ
ꢮ
ꢮ
ꢚ
ꢴ
ꢴ
ꢴ
ꢉ
ꢙ
C
ꢇ ꢅꢆ ꢐꢼ ꢁ ꢃ ꢙꢅ ꢆ
ꢏꢼ ꢀ ꢙꢉ ꢜ
ꢓꢼ ꢂ ꢊꢈ ꢃ ꢌ ꢜ
SEATING
PLANE
PIN 3
T
M
CASE 360C–05
ISSUE D
(INSULATOR)
ꢮ
ꢮ
ꢮ
ꢳ
ꢳ
ꢳ
ꢉ
ꢙ
ꢚ
NI–360S
MRF373SR1
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
11
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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E Motorola, Inc. 2002.
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◊
MRF373/D
Archived 2005
相关型号：
MRF373S
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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