MRF373ALR1_08 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF373ALR1_08 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总10页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF373A
Rev. 7, 9/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF373ALR1
MRF373ALSR1
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
470-860 MHz, 75 W, 32 V
LATERAL N-CHANNEL
BROADBAND
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
D
• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
RF POWER MOSFETs
75 Watts CW Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
G
Impedance Parameters
CASE 360B-05, STYLE 1
NI-360
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
MRF373ALR1
S
• RoHS Compliant
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
CASE 360C-05, STYLE 1
NI-360S
MRF373ALSR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +70
-0.5, +15
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF373ALR1
P
D
197
1.12
278
W
W/°C
W
C
MRF373ALSR1
1.59
W/°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
-65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
MRF373ALR1
MRF373ALSR1
R
0.89
0.63
°C/W
θ
JC
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(V = 0 Vdc, I =1 μA)
V
70
—
—
—
—
—
—
1
Vdc
μAdc
μAdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 32 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate-Source Leakage Current
I
1
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 V, I = 200 μA)
V
2
2.9
3.3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 32 V, I = 100 mA)
V
2.5
—
4.5
0.45
DS
D
Drain-Source On-Voltage
(V = 10 V, I = 3 A)
V
0.41
GS
D
Dynamic Characteristics
Input Capacitance
C
—
—
—
98.5
49
2
—
—
—
pF
pF
pF
iss
(V = 32 V, V = 0, f = 1 MHz)
DS
GS
Output Capacitance
(V = 32 V, V = 0, f = 1 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 32 V, V = 0, f = 1 MHz)
C
rss
DS
GS
Functional Characteristics (50 ohm system)
Common Source Power Gain
G
16.5
56
18.2
60
—
—
dB
%
ps
(V = 32 V, P = 75 W CW, I = 200 mA, f = 860 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 32 V, P = 75 W CW, I = 200 mA, f = 860 MHz)
DD
out
DQ
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
2
R3
V
GG
C14
C13
V
DD
C12
R2
C17
C16
C15
L1
C7
R1
C1
C2
C11
RF INPUT
RF OUTPUT
C10
C5
C3
C4
C6
C9
C8
MRF373A
Rev 01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will
have no impact on form, fit or function of the current product.
Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout
Table 5. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values
Designation
Description
C1, C2
C3
18 pF Chip Capacitors
12 pF Chip Capacitor
1.8 pF Chip Capacitor
51 pF Chip Capacitors
C4
C5, C10
C6
0.3 pF Chip Capacitor (Used only on the MRF373AS)
15 pF Chip Capacitor
C7
C8
10 pF Chip Capacitor
C9
2.7 pF Chip Capacitor
C11
0.5 pF Chip Capacitor
C12
C13
C14, C15
C16
C17
L1A
1000 pF Chip Capacitor
39 pF Chip Capacitor
470 pF Chip Capacitors
2.2 mF, 100 V Chip Capacitor
10 mF, 35 V Tantalum Capacitor
12 nH, Coilcraft
R1, R2
R3
390 Ω, 1/2 W Chip Resistors (2010)
1 kΩ, 1/2 W Chip Resistor (2010)
PCB
Arlon GX-0300-55, 30 mils, ε = 2.55
r
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
3
TYPICAL CHARACTERISTICS
20
V
= 32 Vdc
f = 860 MHz
DD
I
= 500 mA
DQ
19
18
400 mA
300 mA
200 mA
100 mA
17
16
15
1
10
, OUTPUT POWER (WATTS) CW
100
P
out
Figure 2. Power Gain versus Output Power
30
25
20
62
60
58
V
P
= 32 Vdc
= 75 W (CW)
= 200 mA
DD
η
out
I
DQ
IRL
G
ps
15
10
5
56
54
52
800
820
840
860
880
900
920
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
200
150
100
20
15
10
C
iss
C
C
oss
50
0
5
rss
0
0
10
20
30
40
50
60
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Voltage
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
4
Z = 2 Ω
o
Z
load
Z
source
f = 875 MHz
f = 875 MHz
f = 845 MHz
f = 845 MHz
V
DD
= 32 V, I = 200 mA, P = 75 W CW
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
845
860
875
0.58 - j0.29
0.56 - j0.11
0.56 + j0.06
1.60 + j0.07
1.65 + j0.22
1.79 + j0.38
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 5. Series Equivalent Source and Load Impedance
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
5
PACKAGE DIMENSIONS
2X
Q
M
M
M
B
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
G
1
aaa
T A
B
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
INCHES
DIM MIN MAX
MILLIMETERS
B
MIN
20.19
5.72
3.18
5.33
1.40
0.10
MAX
20.45
5.97
4.45
5.59
1.65
0.15
2
(FLANGE)
A
B
0.795
0.225
0.125
0.210
0.055
0.004
0.805
0.235
0.175
0.220
0.065
0.006
2X K
2X D
bbb
C
M
M
M
T A
B
R
D
(LID)
E
F
M
M
M
B
ccc
T A
G
0.562 BSC
14.28 BSC
H
0.077
0.220
0.355
0.357
0.125
0.227
0.225
0.087
0.250
0.365
0.363
0.135
0.233
0.235
1.96
5.59
9.02
9.07
3.18
5.77
5.72
2.21
6.35
9.27
9.22
3.43
5.92
5.97
F
K
H
M
M
M
B
M
ccc
T A
N
N
(LID)
Q
C
E
R
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.13 REF
0.25 REF
0.38 REF
S
(INSULATOR)
M
M
M
B
aaa
T A
SEATING
PLANE
T
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
M
M
B
bbb
T A
M
(INSULATOR)
A
A
CASE 360B-05
ISSUE G
NI-360
MRF373ALR1
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
6
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
7
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
8
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
7
Sept. 2008
•
•
Replaced Case Outline 360C-05, Issue E with Issue F, p. 7-8.
Added Product Documentation and Revision History, p. 9
MRF373ALR1 MRF373ALSR1
Freescale Semiconductor
RF Product Device Data
9
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Document Number: MRF373A
Rev. 7, 9/2008
相关型号：
MRF373S
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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