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BD166 [MOTOROLA]

Plastic Medium Power Silicon PNP Transistor; 塑料中功率硅PNP晶体管
BD166
型号： BD166
厂家： MOTOROLA    MOTOROLA
描述：

Plastic Medium Power Silicon PNP Transistor
塑料中功率硅PNP晶体管

晶体 晶体管 功率双极晶体管 放大器 局域网
文件： 总4页 (文件大小：104K)
中文：  中文翻译
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by BD166/D  
SEMICONDUCTOR TECHNICAL DATA  
1.5 AMPERE  
POWER TRANSISTOR  
PNP SILICON  
45 VOLTS  
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi  
complementary circuits.  
20 WATTS  
•
•
DC Current Gain — h = 40 (Min) @ I = 0.15 Adc  
FE C  
BD166 is complementary with BD165  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
45  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CBO  
V
EBO  
45  
5.0  
1.5  
0.5  
I
C
Base Current  
I
B
Total Device Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
1.25  
10  
Watts  
mW/ C  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
20  
160  
Watts  
mW/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
100  
Unit  
C/W  
C/W  
CASE 77–08  
TO–225AA TYPE  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
θ
JC  
JA  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Sustaining Voltage*  
V
45  
—
Vdc  
(BR)CEO  
(I = 0.1 Adc, I = 0)  
C
B
Collector Cutoff Current  
(V = 45 Vdc, I = 0)  
I
—
—
0.1  
1.0  
mAdc  
mAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
EBO  
BE  
C
DC Current Gain  
h
FE  
(I = 0. 15 A, V  
= 2.0 V)  
CE  
= 2.0 V)  
40  
15  
—
—
C
(I = 0.5 A, V  
C
CE  
Collector–Emitter Saturation Voltage*  
V
—
0.5  
0.95  
—
Vdc  
Vdc  
MHz  
CE(sat)  
(I = 0.5 Adc, I = 0.05 Adc)  
C
B
Base–Emitter On Voltage*  
(I = 0.5 Adc, V = 2.0 Vdc)  
V
BE(on)  
—
C
CE  
Current–Gain — Bandwidth Product  
f
T
6.0  
(I = 500 mAdc, V  
C
= 2.0 Vdc,  
CE  
f = 1.0 MHz)  
* Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
REV 7  
Motorola, Inc. 1995
10  
T
= 150°C  
100 µs  
J
5.0  
25  
20  
3.0  
2.0  
1.0 ms  
5.0 ms  
dc  
15  
10  
5
1.0  
0.5  
SECOND BREAKDOWN  
LIMITED  
BONDING WIRE LIMITED  
0.3  
0.2  
THERMAL LIMITATION @ T = 25°C  
C
PULSE CURVES APPLY BELOW  
RATED V  
CEO  
0
0.1  
0
20  
40  
60  
80  
100  
120  
C)  
140  
160  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
T
, CASE TEMPERATURE (  
°
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
C
CE  
Figure 1. P – T Derating Curve  
Figure 2. Safe Operating Area (see Note 1)  
D
C
1.2  
1
I
= 0.1 A  
0.25 A  
0.5 A  
1 A  
C
0.8  
0.6  
0.4  
0.2  
0
1
5
10  
50  
100  
500  
1000  
I
, BASE CURRENT (mA)  
B
Figure 3. Collector Saturation Region  
10  
1
0.5  
T
= + 150°C  
+ 25°C  
– 25°C  
J
V
at I /I = 10  
C B  
V
at V = 2 V  
CE  
BE(sat)  
BE  
0.1  
1
0.05  
V
at I /I = 10  
C B  
CE(sat)  
V
= 2 V  
CE  
T
= 25°C  
J
0.1  
0.01  
0.01  
0.05  
0.1  
0.5  
1
10  
50  
I , COLLECTOR CURRENT (mA)  
C
100  
500  
1000  
I
, COLLECTOR CURRENT (A)  
C
Figure 4. Current Gain  
Figure 5. “On” Voltage  
Note 1:  
The data of Figure 2 is based on T  
= 150 C; T is  
C
J(pk)  
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided T  
There are two limitations on the power handling ability of a  
transistor; average junction temperature and second break-  
down. Safe operating area curves indicate I – V  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
J(pk)  
limits of  
150 C. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
C
CE  
2
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS  
–B–  
NOTES:  
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
Q
M
INCHES  
MILLIMETERS  
–A–  
DIM  
A
B
C
D
F
MIN  
MAX  
0.435  
0.305  
0.105  
0.026  
0.130  
MIN  
10.80  
7.50  
2.42  
0.51  
2.93  
MAX  
11.04  
7.74  
2.66  
0.66  
3.30  
1
2
3
0.425  
0.295  
0.095  
0.020  
0.115  
H
K
G
H
J
K
M
Q
R
S
0.094 BSC  
2.39 BSC  
0.050  
0.015  
0.575  
5
0.095  
0.025  
0.655  
1.27  
0.39  
14.61  
5
2.41  
0.63  
16.63  
TYP  
TYP  
J
V
G
0.148  
0.045  
0.025  
0.145  
0.040  
0.158  
0.055  
0.035  
0.155  
–––  
3.76  
1.15  
0.64  
3.69  
1.02  
4.01  
1.39  
0.88  
3.93  
–––  
R
M
M
M
0.25 (0.010)  
A
B
S
U
V
D 2 PL  
STYLE 1:  
PIN 1. EMITTER  
M
M
M
0.25 (0.010)  
A
B
2. COLLECTOR  
3. BASE  
CASE 77–08  
TO–225AA TYPE  
ISSUE V  
3
Motorola Bipolar Power Transistor Device Data  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BD166/D  
◊

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