RA30H4047M1_08 [MITSUBISHI]
400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO; 400-470MHZ 30W 12.5V ， 2级放大器。对于移动电
| 型号： | RA30H4047M1_08 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| 文件： | 总9页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4047M1
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier
BLOCK DIAGRAM
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
3
2
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=30W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
1
4
5
At VGG=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
1
2
3
4
5
RF Input (Pin)
FEATURES
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
RF Output (Pout
)
• Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
RF Ground (Case)
• Metal shield structure that makes the improvements of spurious
radiation simple
PACKAGE CODE: H2M
• Low-Power Control Current IGG=1mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA30H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H4047M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
1/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<5V, Pin=0W
17
V
V
VDD<12.5V, Pin=50mW
6
100
mW
W
f=400-470MHz,
Pout
45
VGG<5V
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
-30 to +100
-40 to +110
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
F
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
400
30
470
MHz
W
Pout
ηT
2fo
ρin
VDD=12.5V
VGG=5V
42
%
Pin=50mW
-40
3:1
dBc
—
Input VSWR
IGG
IDD
Gate Current
VDD=0V, VGG=5V, Pin=0W
VDD=17V, VGG=0V, Pin=0W
1
mA
mA
Leakage Current
1
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW,
—
—
Stability
No parasitic oscillation
—
—
Load VSWR Tolerance
No degradation or destroy
Pout=30W (VGG control), Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
2/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
rd
nd
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
2 , 3 HARMONICS versus FREQUENCY
70
-30
-40
-50
-60
-70
-80
V DD=12.5V
V GG=5V
60
P
in=50m W
η T
50
2nd
Pout
40
3rd
30
VDD=12.5V
20
V
P
GG=5V
in=50m W
10
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
INPUT VSWR versus FREQUENCY
5
V DD=12.5V
V
P
GG=5V
in=50m W
4
3
2
1
ρ in
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
60
24
20
16
12
8
60
24
20
16
12
8
Pout
Pout
50
50
Gp
Gp
40
40
30
30
20
20
IDD
f=430M Hz,
10
IDD
f=400M Hz,
10
4
4
V
V
DD=12.5V,
GG=5V
V
V
DD=12.5V,
GG=5V
0
0
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POW ER Pin(dBm)
INPUT POW ER Pin(dBm)
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
60
24
20
16
12
8
60
24
20
16
12
8
Pout
Pout
50
50
Gp
Gp
40
40
30
20
30
20
IDD
IDD
f=450M Hz,
f=470M Hz,
10
4
10
4
V
V
DD=12.5V,
GG=5V
V
V
DD=12.5V,
GG=5V
0
0
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POW ER Pin(dBm)
INPUT POW ER Pin(dBm)
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
3/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
12
10
8
60
50
40
30
20
10
0
12
10
8
f=400M Hz,
f=430M Hz,
VGG=5V,
Pin=50m W
V
GG=5V,
50
40
30
20
10
0
Pin=50m W
Pout
Pout
6
6
IDD
IDD
4
4
2
2
0
0
2
4
6
8
10
12
14
16
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
12
10
8
60
12
10
8
f=450M Hz,
VGG=5V,
f=470M Hz,
VGG=5V,
50
50
40
30
20
10
0
P
in=50m W
P
in=50m W
Pout
Pout
40
30
20
10
0
IDD
IDD
6
6
4
4
2
2
0
0
2
4
6
8
10
12
14
16
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
60
12
10
8
f=400M Hz,
f=430M Hz,
VDD=12.5V,
Pin=50m W
VDD=12.5V,
Pin=50m W
50
10
8
50
Pout
Pout
40
40
30
6
30
6
IDD
IDD
20
10
0
4
20
10
0
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
10
8
60
12
10
8
f=450M Hz,
f=470M Hz,
VDD=12.5V,
Pin=50m W
VDD=12.5V,
Pin=50m W
50
50
Pout
Pout
40
40
30
6
30
6
IDD
IDD
20
10
0
4
20
10
0
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
4/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
OUTLINE DRAWING (mm)
67±1
60±1
49.8±1
2-R2±0.5
① ②
③
④
12.5±1
17±1
0.6±0.2
44±1
56±1
1 RF Input (Pin )
2 Gate Voltage(VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
5/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
TEST BLOCK DIAGRAM
Power
Meter
Spectrum
Analyzer
5
DUT
2
4
1
3
ZL
Ω
=50
Ω
ZG
=50
Pre-
amplifier
Power
Meter
Directional
Coupler
Signal
Directional
Coupler
Attenuator
Attenuator
Attenuator
Generator
C1
C2
+
-
-
+
DC Power
Supply VDD
DC Power
Supply
VGG
1 RF Input (Pin)
2 Gate Voltage (VGG
C1, C2: 4700pF, 22uF in parallel
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
1
4
5
2
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
6/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal
cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die
bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually
inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the
glass-epoxy substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ ηT=42%
VDD
(V)
Stage
(A)
1st
2nd
0.05
2.5
2.5
2.24
0.74
1.5
4.2
12.5
30.0
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
ch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C
T
Tch2 = Tcase + (12.5V x 4.5A – 30.0W + 2.5W) x 0.74°C/W = Tcase + 18.5 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% - 30W + 0.05W) = 0.67°C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
T
ch1 = Tair + 66.5 °C
Tch2 = Tair + 48.5 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
7/9
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).
When the gate voltage is close to zero, the nominal output signal (Pout=30W) is attenuated up to 60 dB and only
a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Load condition of Output terminal:
This module suppose to use on the condition that load impedance is 50ohm. On the over load condition,this module
run into the short mode in the worst case and the module involve the risk of burn out and smoking of parts including
the substrate in the module.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
8/9
SALES CONTACT
JAPAN:
GERMANY:
Mitsubishi Electric Corporation
Semiconductor Sales Promotion Department
2-2-3 Marunouchi, Chiyoda-ku
Tokyo, Japan 100
Mitsubishi Electric Europe B.V.
Semiconductor
Gothaer Strasse 8
D-40880 Ratingen, Germany
Email:
Phone: +81-3-3218-4854
Fax: +81-3-3218-4861
sod.sophp@hq.melco.co.jp
Email:
semis.info@meg.mee.com
Phone: +49-2102-486-0
Fax:
+49-2102-486-4140
HONG KONG:
FRANCE:
Mitsubishi Electric Hong Kong Ltd.
Semiconductor Division
Mitsubishi Electric Europe B.V.
Semiconductor
41/F. Manulife Tower, 169 Electric Road
North Point, Hong Kong
25 Boulevard des Bouvets
F-92741 Nanterre Cedex, France
Email:
Phone: +852 2510-0555
Fax: +852 2510-9822
scdinfo@mehk.com
Email:
semis.info@meg.mee.com
Phone: +33-1-55685-668
Fax:
+33-1-55685-739
SINGAPORE:
ITALY:
Mitsubishi Electric Asia PTE Ltd
Semiconductor Division
307 Alexandra Road
Mitsubishi Electric Europe B.V.
Semiconductor
Centro Direzionale Colleoni,
Palazzo Perseo 2, Via Paracelso
I-20041 Agrate Brianza, Milano, Italy
#3-01/02 Mitsubishi Electric Building,
Singapore 159943
Email:
semicon@asia.meap.com
Email:
semis.info@meg.mee.com
Phone: +65 64 732 308
Phone: +39-039-6053-10
Fax:
+65 64 738 984
Fax:
+39-039-6053-212
TAIWAN:
U.K.:
Mitsubishi Electric Taiwan Company, Ltd.,
Semiconductor Department
9F, No. 88, Sec. 6
Mitsubishi Electric Europe B.V.
Semiconductor
Travellers Lane, Hatfield
Hertfordshire, AL10 8XB, England
Chung Shan N. Road
Taipei, Taiwan, R.O.C.
Email:
Phone: +44-1707-278-900
Fax: +44-1707-278-837
semis.info@meuk.mee.com
Email:
metwnssi@metwn.meap.com
Phone: +886-2-2836-5288
Fax:
+886-2-2833-9793
U.S.A.:
AUSTRALIA:
Mitsubishi Electric & Electronics USA, Inc.
Electronic Device Group
Mitsubishi Electric Australia,
Semiconductor Division
348 Victoria Road
1050 East Arques Avenue
Sunnyvale, CA 94085
Rydalmere, NSW 2116
Sydney, Australia
Email:
customerservice@edg.mea.com
Phone: 408-730-5900
Email: semis@meaust.meap.com
Fax:
408-737-1129
Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
CANADA:
+61 3 9262 9898
Mitsubishi Electric Sales Canada, Inc.
4299 14th Avenue
Fax:
+61 2 9684-7208
+61 2 9684 7245
Markham, Ontario, Canada L3R OJ2
Phone: 905-475-7728
Fax:
905-475-1918
RA30H4047M1
3rd Mar 2008
MITSUBISHI ELECTRIC
9/9
相关型号：
©2020 ICPDF网 联系我们和版权申明