RA30H4047M1_10 [MITSUBISHI]
400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO; 400-470MHZ 30W 12.5V ， 2级放大器。对于移动电
| 型号： | RA30H4047M1_10 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| 文件： | 总9页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier
BLOCK DIAGRAM
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
3
2
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=30W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
1
4
5
At VGG=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
1
2
3
4
5
RF Input (Pin)
FEATURES
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
RF Output (Pout
)
• Pout>30W, T>42% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
RF Ground (Case)
• Metal shield structure that makes the improvements of spurious
radiation simple
PACKAGE CODE: H2M
• Low-Power Control Current IGG=1mA (typ) @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA30H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H4047M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<5V, Pin=0W
17
V
V
VDD<12.5V, Pin=50mW
6
100
mW
W
f=400-470MHz,
VGG<5V
Pout
45
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
-30 to +100
-40 to +110
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
F
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
400
-
-
470
-
MHz
W
Pout
T
2fo
in
VDD=12.5V
VGG=5V
30
42
-
-
-
%
Pin=50mW
-
-40
3:1
-
dBc
—
Input VSWR
-
-
IGG
IDD
Gate Current
VDD=0V, VGG=5V, Pin=0W
VDD=17V, VGG=0V, Pin=0W
-
1
-
mA
mA
Leakage Current
-
1
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW,
—
—
Stability
No parasitic oscillation
—
—
Load VSWR Tolerance
No degradation or destroy
Pout=30W (VGG control), Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
2nd, 3rd HARMONICS versus FREQUENCY
-30
-40
-50
-60
-70
-80
70
VDD=12.5V
VGG=5V
hT
60
50
40
30
20
10
0
Pin=50mW
2nd
Pout
3rd
VDD=12.5V
VGG=5V
Pin=50mW
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
INPUT VSWR versus FREQUENCY
5
VDD=12.5V
VGG=5V
Pin=50mW
4
3
2
rin
1
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
60
24
20
16
12
8
60
50
40
30
20
10
0
24
Pout
Pout
50
40
30
20
10
0
20
16
12
8
Gp
Gp
IDD
IDD
f=400MHz,
VDD=12.5V,
VGG=5V
f=430MHz,
VDD=12.5V,
VGG=5V
4
4
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60 24
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
60
50
40
30
20
10
0
Pout
Pout
20
16
12
8
50
40
30
20
10
0
20
Gp
Gp
16
12
8
IDD
IDD
f=470MHz,
VDD=12.5V,
VGG=5V
f=450MHz,
4
4
VDD=12.5V,
VGG=5V
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
50
40
30
20
10
0
12
10
8
12
10
8
f=430MHz,
f=400MHz,
VGG=5V,
VGG=5V,
50
40
30
20
10
0
Pout
Pout
Pin=50mW
Pin=50mW
6
6
IDD
IDD
4
4
2
2
0
0
2
4
6
8
10
12
14
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
50
40
30
20
10
0
12
60
50
40
30
20
10
0
12
f=450MHz,
VGG=5V,
f=470MHz,
VGG=5V,
10
10
8
Pout
Pin=50mW
Pin=50mW
Pout
8
6
4
2
0
6
IDD
IDD
4
2
0
2
4
6
8
10
12
14
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
50
40
30
20
10
0
12
60
12
f=430MHz,
VDD=12.5V,
Pin=50mW
f=400MHz,
VDD=12.5V,
Pin=50mW
Pout
Pout
10
8
50
40
30
20
10
0
10
8
6
4
2
0
IDD
IDD
6
4
2
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
50
40
30
20
10
0
12
60
50
40
30
20
10
0
12
10
8
f=470MHz,
VDD=12.5V,
Pin=50mW
f=450MHz,
VDD=12.5V,
Pin=50mW
Pout
Pout
10
8
IDD
IDD
6
6
4
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
OUTLINE DRAWING (mm)
67±1
60±1
49.8±1
2-R2±0.5
① ②
③
④
12.5±1
17±1
0.6±0.2
44±1
56±1
1 RF Input (Pin )
2 Gate Voltage(VGG
3 Drain Voltage (VDD
4 RF Output (Pout
5 RF Ground (Case)
)
)
)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
TEST BLOCK DIAGRAM
Power
Meter
Spectrum
Analyzer
5
DUT
2
4
1
3
ZL
Ω
G
Ω
=50
Z
=50
Pre-
amplifier
Power
Meter
Directional
Coupler
Signal
Directional
Coupler
Attenuator
Attenuator
Attenuator
Generator
C1
C2
+
-
-
+
DC Power
Supply VDD
DC Power
Supply
VGG
1 RF Input (Pin)
2 Gate Voltage (VGG
3 Drain Voltage (VDD
4 RF Output (Pout
5 RF Ground (Case)
C1, C2: 4700pF, 22uF in parallel
)
)
)
EQUIVALENT CIRCUIT
3
1
4
5
2
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal
cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded
onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip
capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate
provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ T=42%
VDD
(V)
Stage
(A)
1st
2nd
0.05
2.5
2.5
2.24
0.74
1.5
4.2
12.5
30.0
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C
Tch2 = Tcase + (12.5V x 4.5A – 30.0W + 2.5W) x 0.74°C/W = Tcase + 18.5 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% - 30W + 0.05W) = 0.67°C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 66.5 °C
Tch2 = Tair + 48.5 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).
When the gate voltage is close to zero, the nominal output signal (Pout=30W) is attenuated up to 60 dB and only
a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and
were not specifically designed for use in other applications. In particular, while these products are highly reliable
for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient
to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of
critical communications elements would include transmitters for base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.)
to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than
90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4047M1
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a
third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies
or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information
published by Mitsubishi Electric Corporation by various means, including the Mitsubishi
Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in
whole or in part these materials.
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exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
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