RA30H4452M [MITSUBISHI]
440-520MHz 30W 12.5V MOBILE RADIO; 440-520MHz 30W 12.5V移动无线电
| 型号： | RA30H4452M |
| 厂家： | 
Mitsubishi Group |
| 描述： | 440-520MHz 30W 12.5V MOBILE RADIO |
| 文件： | 总9页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF MOSFET MODULE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
440-520MHz 30W 12.5V MOBILE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA30H4452M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
2
3
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
1
4
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
1
RF Input (Pin)
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
RF Output (Pout
)
FEATURES
RF Ground (Case)
• Enhancement-Mode MOSFET Transistors
(IDD@0 @ VDD=12.5V, VGG=0V)
• Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
RA30H4452M-E01
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4452M-01
(Japan - packed without desiccator)
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MITSUBISHI RF POWER MODULE
RA30H4452M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<5V
17
V
V
VDD<12.5V, Pin=0mW
6
100
mW
W
f=440-520MHz,
ZG=ZL=50W
Pout
45
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
Above Parameters are guaranteed independently
-30 to +110
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
Input VSWR
440
30
520
MHz
W
Pout
hT
40
%
VDD=12.5V,
VGG=5V,
2fo
r in
-25
3:1
dBc
—
Pin=50mW
IGG
Gate Current
1
mA
VDD=10.0-15.2V, Pin=25-70mW,
—
—
Stability
No parasitic oscillation
—
—
Pout<40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR Tolerance
No degradation or destroy
Load VSWR=20:1
All Parameters, Conditions, Ratings and Limits are subject to change without notice
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MITSUBISHI RF POWER MODULE
RA30H4452M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
2 , 3rd HARMONICS versus FREQUENCY
nd
and INPUT VSWR versus FREQUENCY
60
-20
-30
-40
-50
-60
-70
Pout
VDD=12.5V
VGG=5V
50
40
30
20
10
0
100
80
60
40
20
0
P =50mW
in
VDD=12.5V
VGG=5V
P =50mW
in
hT
3rd
2nd
r in
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
60
12
10
8
60
12
10
8
Gp
P
P
out
out
Gp
50
40
30
20
10
0
50
40
30
20
10
0
6
6
IDD
IDD
4
4
f=440MHz,
VDD=12.5V,
VGG=5V
f=470MHz,
VDD=12.5V,
VGG=5V
2
2
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
12
10
8
60
12
P
Pout
out
Gp
Gp
50
40
30
20
10
0
50
40
30
20
10
0
10
8
6
6
IDD
IDD
4
4
f=490MHz,
f=520MHz,
VDD=12.5V,
VGG=5V
VDD=12.5V,
VGG=5V
2
2
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
18
16
14
12
10
8
90
18
f=440MHz,
VDD=12.5V,
VGG=5V
f=470MHz,
VDD=12.5V,
VGG=5V
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
16
14
12
10
8
P
Pout
out
IDD
IDD
6
6
4
4
2
2
0
0
2
4
6
8
10
12
14
16
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
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MITSUBISHI RF POWER MODULE
RA30H4452M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
18
90
80
70
60
50
40
30
20
10
0
18
16
14
12
10
8
f=490MHz,
f=520MHz,
VDD=12.5V,
80
70
60
50
40
30
20
10
0
16
14
12
10
8
VDD=12.5V,
GG=5V
Pout
V
GG=5V
V
Pout
IDD
IDD
6
6
4
4
2
2
0
0
2
4
6
8
10
12
14
16
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
60
12
10
8
f=440MHz,
VDD=12.5V,
f=470MHz,
Pout
Pout
V
V
DD=12.5V,
GG=5V
50
40
30
20
10
0
10
8
50
40
30
20
10
0
VGG=5V
IDD
IDD
6
6
4
4
2
2
0
0
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
60
12
10
8
f=490MHz,
VDD=12.5V,
f=520MHz,
VDD=12.5V,
Pout
50
40
30
20
10
0
10
8
50
VGG=5V
VGG=5V
Pout
40
30
20
10
0
IDD
6
6
IDD
4
4
2
2
0
0
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
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MITSUBISHI RF POWER MODULE
RA30H4452M
OUTLINE DRAWING (mm)
66.0 ±0.5
60.0 ±0.5
51.5 ±0.5
3.0 ±0.3
7.25 ±0.8
2-R2 ±0.5
1
2
3
4
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
(50.4)
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
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MITSUBISHI RF POWER MODULE
RA30H4452M
TEST BLOCK DIAGRAM
Spectrum
Analyzer
Power
Meter
DUT
5
1
2
3
4
ZG=50W
ZL=50W
Power
Meter
Signal
Generator
Pre-
amplifier
Directional
Coupler
Directional
Coupler
Attenuator
Attenuator
Attenuator
C1
C2
-
+
+
-
DC Power
DC Power
Supply VGG
Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
2
1
4
5
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MITSUBISHI RF POWER MODULE
RA30H4452M
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap
is attached. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by
resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits.
Wire leads soldered onto the alumina substrate provide DC and RF connection.
Following conditions shall be avoided:
a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes)
b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)
c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene)
d) Frequent on/off switching causing thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later
when thermal expansion forces are added).
Thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink.
The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.
M3 screws are recommended with tightening torque 0.4 to 0.6Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads shall be soldered after the module is screwed onto the heat sink.
The soldering temperature shall be lower than 260°C for maximum 10 seconds, or lower than 350°C for maximum 3
seconds.
Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause
bubbles in the coating of the transistor chips, which can lift off bond wires).
Thermal Design of the Heat Sink:
At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ hT=40%
VDD
(V)
Stage
(A)
1st
2nd
3rd
0.05
1.5
1.5
9.0
5.0
2.4
1.2
0.30
1.50
4.20
12.5
9.0
30.0
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.30A - 1.5W + 0.05W) x 5.0°C/W = Tcase + 11.5 °C
Tch2 = Tcase + (12.5V x 1.50A - 9.0W + 1.50W) x 2.4°C/W = Tcase + 27.0 °C
Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2°C/W = Tcase + 37.8 °C
For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature
Tair=60°C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / hT ) - Pout + Pin ) of the heat
sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 41.5 °C
Tch2 = Tair + 57.0 °C
Tch3 = Tair + 67.8 °C
175°C maximum rating for the channel temperature ensures application under derated conditions.
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MITSUBISHI RF POWER MODULE
RA30H4452M
Output Power Control:
Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage VGG
.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage
current is flowing from the battery into the Drain.
Around VGG=3.5V the output power and Drain current increases strongly.
Around VGG=4V, latest at VGG=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The Gate voltage is used to set the Drain quiescent current for the required linearity.
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a
4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ?
b) Is the load impedance ZL=50W ?
c) Is the source impedance ZG=50W ?
Frequent on/off switching:
In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the
transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time
thermally induced mechanical stress.
Quality:
MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating
conditions exceeding those in Mobile Radios.
The technology of this module is the result of more than 20 years experience, field proven in several 10 million
Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which
are caused by handling or operating conditions. Few degradation failures can be found.
Keep safety first in your circuit
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
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SALES CONTACT
JAPAN:
GERMANY:
Mitsubishi Electric Corporation
Semiconductor Sales Promotion Department
2-2-3 Marunouchi, Chiyoda-ku
Tokyo, Japan 100
Mitsubishi Electric Europe B.V.
Semiconductor
Gothaer Strasse 8
D-40880 Ratingen, Germany
Email:
Phone: +81-3-3218-4854
Fax: +81-3-3218-4861
sod.sophp@hq.melco.co.jp
Email:
semis.info@meg.mee.com
Phone: +49-2102-486-0
Fax:
+49-2102-486-3670
HONG KONG:
FRANCE:
Mitsubishi Electric Hong Kong Ltd.
Semiconductor Division
Mitsubishi Electric Europe B.V.
Semiconductor
41/F. Manulife Tower, 169 Electric Road
North Point, Hong Kong
25 Boulevard des Bouvets
F-92741 Nanterre Cedex, France
Email:
Phone: +852 2510-0555
Fax: +852 2510-9822
scdinfo@mehk.com
Email:
semis.info@meg.mee.com
Phone: +33-1-55685-668
Fax:
+33-1-55685-739
SINGAPORE:
ITALY:
Mitsubishi Electric Asia PTE Ltd
Semiconductor Division
307 Alexandra Road
Mitsubishi Electric Europe B.V.
Semiconductor
Centro Direzionale Colleoni,
Palazzo Perseo 2, Via Paracelso
I-20041 Agrate Brianza, Milano, Italy
#3-01/02 Mitsubishi Electric Building,
Singapore 159943
Email:
semicon@asia.meap.com
Email:
semis.info@meg.mee.com
Phone: +65 64 732 308
Phone: +39-039-6053-10
Fax:
+65 64 738 984
Fax:
+39-039-6053-212
TAIWAN:
U.K.:
Mitsubishi Electric Taiwan Company, Ltd.,
Semiconductor Department
9F, No. 88, Sec. 6
Mitsubishi Electric Europe B.V.
Semiconductor
Travellers Lane, Hatfield
Hertfordshire, AL10 8XB, England
Chung Shan N. Road
Taipei, Taiwan, R.O.C.
Email:
Phone: +44-1707-278-900
Fax: +44-1707-278-837
semis.info@meuk.mee.com
Email:
metwnssi@metwn.meap.com
Phone: +886-2-2836-5288
Fax:
+886-2-2833-9793
U.S.A.:
AUSTRALIA:
Mitsubishi Electric & Electronics USA, Inc.
Electronic Device Group
Mitsubishi Electric Australia,
Semiconductor Division
348 Victoria Road
1050 East Arques Avenue
Sunnyvale, CA 94085
Rydalmere, NSW 2116
Sydney, Australia
Email:
customerservice@edg.mea.com
Phone: 408-730-5900
Email: semis@meaust.meap.com
Fax:
408-737-1129
Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
CANADA:
+61 3 9262 9898
Mitsubishi Electric Sales Canada, Inc.
4299 14th Avenue
Fax:
+61 2 9684-7208
+61 2 9684 7245
Markham, Ontario, Canada L3R OJ2
Phone: 905-475-7728
Fax:
905-475-1918
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