RA30H4452M-101 [MITSUBISHI]
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO; 符合RoHS标准， 440-520MHz 30W 12.5V移动无线电
| 型号： | RA30H4452M-101 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO |
| 文件： | 总7页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA30H4452M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
2
3
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
1
4
5
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
1
2
3
4
5
RF Input (Pin)
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
RF Output (Pout
)
FEATURES
RF Ground (Case)
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
PACKAGE CODE: H2S
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA30H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4452M-101
RA30H4452M
1 Aug 2006
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4452M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<5V
17
V
V
VDD<12.5V, Pin=0mW
6
100
mW
W
f=440-520MHz,
ZG=ZL=50Ω
Pout
45
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
Above Parameters are guaranteed independently
-30 to +110
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
Input VSWR
440
30
520
MHz
W
Pout
ηT
40
%
V
DD=12.5V,
GG=5V,
V
2fo
ρin
-25
3:1
dBc
—
Pin=50mW
IGG
Gate Current
1
mA
VDD=10.0-15.2V, Pin=25-70mW,
—
—
Stability
No parasitic oscillation
—
—
Pout<40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1
Load VSWR Tolerance
No degradation or destroy
All Parameters, Conditions, Ratings and Limits are subject to change without notice
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4452M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and TOTAL EFFICIENCY
OUTPUT POWER, TOTAL EFFICIENCY
and INPUT VSWR versus FREQUENCY
versus INPUT POWER
100
80
60
40
20
0
50
40
30
20
10
0
60
50
40
30
20
10
0
VDD=12.5V,
Pin=50mW
Pout
100
80
60
40
20
0
Pout @VGG=5V
ηT
ηT @ Pout=30W (VGG control)
f=440MHz,
DD=12.5V,
VGG=5V
V
ρin @ Pout=30W (VGG control)
0
20
40
60
80
100
430
450
470
490
510
530
INPUT POWER Pin (mW)
FREQUENCY f (MHz)
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
100
50
100
50
Pout
Pout
80
60
40
20
0
40
30
20
10
0
80
60
40
20
0
40
30
20
10
0
ηT
ηT
f=480MHz,
f=520MHz,
V
V
DD=12.5V,
GG=5V
V
V
DD=12.5V,
GG=5V
0
20
40
60
80
100
0
20
40
60
80
100
INPUT POWER Pin (mW)
INPUT POWER Pin (mW)
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
OUTPUT POWER and TOTAL EFFICIENCY
versus DRAIN VOLTAGE
60
70
440MHz
480MHz
520MHz
Pout
Pout
60
50
40
30
20
10
0
50
40
30
20
10
0
100
80
60
40
20
0
100
80
60
40
20
0
ηT
ηT
f=440MHz,
V
DD=12.5V,
Pin=50mW
VGG=5V,
Pin=50mW
0
2
4
6
8
10 12 14 16 18
2
2.5
3
3.5
4
4.5
5
5.5
6
DRAIN VOLTAGE VDD (V)
GATE VOLTAGE VGG (V)
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
100
80
60
40
20
0
50
40
30
20
10
0
100
80
60
40
20
0
50
40
30
20
10
0
Pout
Pout
ηT
ηT
f=480MHz,
f=520MHz,
V
DD=12.5V,
V
DD=12.5V,
Pin=50mW
Pin=50mW
2
2.5
3
3.5
4
4.5
5
5.5
6
2
2.5
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE VGG (V)
GATE VOLTAGE VGG (V)
RA30H4452M
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4452M
OUTLINE DRAWING (mm)
66.0 ±0.5
60.0 ±0.5
51.5 ±0.5
3.0 ±0.3
7.25 ±0.8
2-R2 ±0.5
5
1
2
3
4
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
(50.4)
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4452M
TEST BLOCK DIAGRAM
DUT
Power
Meter
Spectrum
Analyzer
5
1
2
3
4
ZG=50Ω
ZL=50Ω
Signal
Generator
Pre-
amplifier
Directional
Coupler
Directional
Coupler
Power
Meter
Attenuator
Attenuator
Attenuator
C1
C2
-
+
+
-
DC Power
Supply VGG
DC Power
Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG
)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
2
1
4
5
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4452M
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap
is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and
coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection.
Following conditions shall be avoided:
a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes)
b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)
c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene)
d) Frequent on/off switching causing thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later
when thermal expansion forces are added).
Thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink.
The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.
M3 screws are recommended with tightening torque 0.4 to 0.6Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads shall be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ ηT=40%
VDD
(V)
Stage
(A)
1st
2nd
3rd
0.05
1.5
1.5
9.0
29.0
2.4
0.18
1.60
4.20
12.5
9.0
30.0
1.2
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.18A - 1.5W + 0.05W) x 29.0°C/W = Tcase + 23.2 °C
Tch2 = Tcase + (12.5V x 1.60A - 9.0W + 1.50W) x 2.4°C/W = Tcase + 30.0 °C
Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2°C/W = Tcase + 37.8 °C
For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature
Tair=60°C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat
sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 53.2 °C
Tch2 = Tair + 60.0 °C
Tch3 = Tair + 67.8 °C
175°C maximum rating for the channel temperature ensures application under derated conditions.
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA30H4452M
Output Power Control:
Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage VGG
.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage
current is flowing from the battery into the Drain.
Around VGG=2.5V the output power and Drain current increases strongly.
Around VGG=3.5V, latest at VGG=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The Gate voltage is used to set the Drain quiescent current for the required linearity.
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain,
a 4.700pF chip capacitor, located close to the module, and a 22µF electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ?
b) Is the load impedance ZL=50Ω ?
c) Is the source impedance ZG=50Ω ?
Frequent on/off switching:
In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the
transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long
time thermally induced mechanical stress.
Quality and Failure in Time (FIT):
MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating
conditions exceeding those in Mobile Radios.
The technology of this module is the result of more than 20 years experience, field proven in several 10 million
Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which
are caused by handling or operating conditions. Few degradation failures can be found.
FIT calculation based on field failures: 3 years after shipping 2.7 million modules 20 modules with degradation
failures had been returned. Assuming 1 hour operation every day in these 3 years results in 7 FIT.
Not all field failures are returned and the FIT rate strongly depends on the operating conditions.
Our target for this module technology is 500 FIT.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
RA30H4452M
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