RA30H4452M1A-101 [MITSUBISHI]
Narrow Band High Power Amplifier,;
| 型号： | RA30H4452M1A-101 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Narrow Band High Power Amplifier, 高功率电源 射频 微波 |
| 文件： | 总12页 (文件大小：740K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
DESCRIPTION
The RA30H4452M1A is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt digital mobile radios of TDMA that operate
in the 440- to 520-MHz range.
BLOCK DIAGRAM
3
2
VGG2
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
At VGG2=5V, the typical gate currents are 1.6mA.
This module is designed for TDMA, therefore this module
separated the gate terminal of each MOSFET to make Ton/Toff
time rapid.
Pin&VGG1
1
4
5
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG1=0V, VGG2=0V)
1
RF Input (Pin) & Gate Voltage (VGG1
Power Control
)
• Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• High speed Output rise/fall time.
2
3
4
5
Gate Voltage (VGG2), Power Control
Drain Voltage (VDD), Battery
Ton <60μsec , Toff <20μsec @ f=440-520MHz, VDD =12.5V,Pin=50mW,
VGG2=5.0V, Zg=Zl=50Ω,Pout=10W(VGG1:adj. or VGG2:adj.)
RF Output (Pout
)
RF Ground (Case)
• Metal shield structure that makes the improvements of spurious
radiation simple
PACKAGE CODE: H2M
• Low-Power Control Current IGG1 + IGG2=2mA (typ) @ VGG1=3.4V,
V GG2 =5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA30H4452M1A is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4452M1A-101
Publication Date :Mar.2015
1
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
Gate1 Voltage
VGG1<3.4V,VGG2<5V, Pin=0W
17
4
V
V
V
V GG1
V
DD≦12.5V, VGG2≦5V, Pin=50mW
V GG2 Gate2 Voltage
V
DD≦12.5V, VGG1≦3.4V, Pin=50mW
6
IDD
Pin
Total Current
Input Power
Output Power
-
10
100
A
mW
W
f=440-520MHz,
Pout
45
V
GG1≦3.4V, V GG2≦5V
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
-30 to +100
-40 to +110
°C
°C
-
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
F
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
3nd Harmonic
Input VSWR
440
-
-
-
-
-
-
-
-
-
520
-
MHz
W
VDD=12.5V, VGG1=3.4V, VGG2=5V,Pin=50mW
Pout
T
2fo
3fo
in
30
40
-
-
%
-35
-40
3:1
2
dBc
dBc
—
-
-
VDD=0V, VGG1=3.4V, VGG2=0V, Pin=0W
VDD=0V, VGG1=0V, VGG2=5V, Pin=0W
VDD=17V, VGG1=VGG2=0V, Pin=0W
VDD=15.2V, V GG2=5V, Pout=30W(V GG1:adj.),
Pin=50mW, ρl≦20:1(All Phase)
mA
mA
mA
IGG
1
2
Gate Current
Gate Current
Leakage Current
-
4
IGG
-
IDD
-
1
No degradation or
destroy
—
Load VSWR Tolerance
—
VDD=10.0/12.5/15.2V, Pin=25/50/70mW,
Pout=5-35W, VGG1=0-3.4V, VGG2=3.0/4.0/5.0V
ρl≦3:1(All Phase)
No parasitic oscillation
more than
—
Stability
—
-60dBc
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date :Mar.2015
2
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
CHARACTERISTICS GUARANTEED AS DESIGN VALUE
( Tc=+25°C, Zg=Zl=50Ω UNLESS OTHERWISE SPECIFIED )
LIMIT
CHARACTERISTIC SYMBOL
CONDITIONS
UNIT
Tc(℃)
25
MIN.
MAX.
Output rise time
Ton1
f=440-520MHz, VDD =12.5V,
Pin=50mW, VGG2=3.0V, Zg=Zl=50Ω,
out=10W(GG1:adj.),
Only VGG1 is pulse operation.
-
-
-
-
60
μsec
μsec
μsec
μsec
(@V GG1 operation)
P
Output fall time
Toff1
25
20
60
20
(@V GG1 operation)
Output rise time
Ton2
f=440-520MHz, VDD =12.5V,
Pin=50mW, V GG2=3.0V, Zg=Zl=50Ω,
out=10W(V GG1:adj.),
Only VGG2 is pulse operation.
25
(@V GG2 operation)
P
Output fall time
Toff2
25
(@V GG2 operation)
note1: The pulse wave pattern of VGG1 and VGG2 is defined as Fig 1.
note2: It is the guarantee on our jig shown in page8 and is not guaranteeing in the radio.
30msec
30msec
VH
VL:0V
2.5nsec
2.5nsec
Fig.1 V GG1,V GG2 Pulse shape
Publication Date :Mar.2015
3
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
2nd, 3rd HARMONICSversus FREQUENCY
60
55
50
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
VDD=12.5V
VGG1=3.4V
VGG2=5.0V
Pin=50mW
Pout
2nd
ηT
VDD=12.5V
VGG1=3.4V
VGG2=5.0V
Pin=50mW
3rd
ρin
0
430 440 450 460 470 480 490 500 510 520 530
Frequencyf (MHz)
430 440 450 460 470 480 490 500 510 520 530
Frequencyf (MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
20
50
20
18
16
14
12
10
8
45
18
16
14
12
10
8
45
40
35
30
25
20
15
10
5
Pout
Pout
40
35
Gp
Gp
30
25
f=480MHz
VDD=12.5V
VGG1=3.4V
VGG2=5.0V
f=440MHz
20
VDD=12.5V
VGG1=3.4V
IDD
15
6
6
VGG2=5.0V
10
I DD
4
4
5
0
2
2
0
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
45
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
Pout
Gp
f=520MHz
VDD=12.5V
VGG1=3.4V
VGG2=5.0V
I DD
6
4
2
0
0
-10
-5
0
5
10
15
20
Input Power Pin (dBm)
Publication Date :Mar.2015
4
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
70
65
60
55
50
45
40
35
30
25
20
15
10
5
14
13
12
11
10
9
70
65
60
55
50
45
40
35
30
25
20
15
10
5
14
13
12
11
10
9
f=480MHz
VGG1=3.4V
VGG2=5.0V
Pin=50mW
f=440MHz
VGG1=3.4V
VGG2=5.0V
Pin=50mW
Pout
Pout
8
8
7
7
I DD
6
6
I DD
5
5
4
4
3
3
2
2
1
1
0
0
0
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Drain Voltage VDD (V)
Drain Voltage VDD (V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
70
65
60
55
50
45
40
35
30
25
20
15
10
5
14
13
12
11
10
9
f=520MHz
VGG1=3.4V
VGG2=5.0V
Pin=50mW
Pout
8
7
I DD
6
5
4
3
2
1
0
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Drain Voltage VDD (V)
Publication Date :Mar.2015
5
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE 1
OUTPUT POWER and DRAIN CURRENT
versus GATEVOLTAGE 1
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
Pout
f=480MHz
f=440MHz
VDD=12.5V
VGG2=5V
Pin=50mW
VDD=12.5V
VGG2=5V
Pin=50mW
Pout
I DD
I DD
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate Voltage 1VGG 1(V)
Gate Voltage1 VGG 1(V)
OUTPUT POWER and DRAIN CURRENT
versus GATEVOLTAGE 1
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
f=520MHz
VDD=12.5V
VGG2=5V
Pout
Pin=50mW
I DD
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate Voltage1 VGG 1(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE 2
OUTPUT POWER and DRAIN CURRENT
versus GATEVOLTAGE 2
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
f=400MHz
VDD=12.5V
VGG1=3.4V
Pin=50mW
f=378MHz
VDD=12.5V
VGG1=3.4V
Pin=50mW
Pout
Pout
I DD
I DD
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage2 VGG 2(V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage2 VGG 2(V)
OUTPUT POWER and DRAIN CURRENT
versus GATEVOLTAGE 2
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
f=435MHz
Pout
VDD=12.5V
VGG1=3.4V
Pin=50mW
I DD
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage2 VGG 2(V)
Publication Date :Mar.2015
6
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
OUTLINE DRAWING (mm)
67±1
60±1
49.8±1
2-R2±0.5
① ②
③
④
12.5±1
17±1
0.6±0.2
44±1
56±1
1
RF Input (Pin) & Gate Voltage (VGG1)
2
3
4
5
Gate Voltage(VGG
Drain Voltage (VDD
RF Output (Pout
RF Ground (Case)
)
)
)
Publication Date :Mar.2015
7
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
TEST BLOCK DIAGRAM
Publication Date :Mar.2015
8
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
EQUIVALENT CIRCUIT
Publication Date :Mar.2015
9
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ T=45%
VDD
(V)
Stage
(W)
(A)
1st
0.05
3.0
3.0
2.57
1.0
1.5
4.5
12.5
2nd
30.0
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 3.0W + 0.05W) x 2.57°C/W = Tcase + 40.6 °C
Tch2 = Tcase + (12.5V x 4.5A – 30.0W +3.0W) x 1.0°C/W
= Tcase + 29.3 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout
Pin ) of the heat sink, including the contact resistance, is:
+
Rth(case-air) = (90°C - 60°C) / (30W/40% - 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.82 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 70.6 °C
Tch2 = Tair + 59.3 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Publication Date :Mar.2015
10
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).When the gate voltage is close to zero, the nominal output signal (Pout=60W) is attenuated up
to 60 dB and only a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4,700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility
to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per normal
operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets,
please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for
critical communications elements. In the application, which is base station applications and fixed station applications
that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider
the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability
report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor.
3. RA series products use MOSFET semiconductor technology. Moreover, this product differs from other RA series.
The input terminal combine with gate bias terminal of first stage FET. Therefore, there is no coupling capacitor.
They are sensitive to ESD voltage therefore appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under
extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50. Under the condition of operating into
a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is
risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.
Publication Date :Mar.2015
11
< Silicon RF Power Modules >
RA30H4452M1A
RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio
10.Design and use environment:
Please avoid use in the place where water or organic solvents can adhere directly to the product and the environments
with the possibility of caustic gas, dust, salinity, etc. Reliability could be markedly decreased and also there is a
possibility failures could result causing a serious accident. Likewise, there is a possibility of causing a serious accident if
used in an explosive gas environment. Please allow for adequate safety margin in your designs.
11. Please refer to the additional precautions in the formal specification sheet.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor
product best suited to the customer’s application; they do not convey any license under any intellectual property
rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights,
originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples
contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date :Mar.2015
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