MGFC41V7785 [MITSUBISHI]
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, FM;型号: | MGFC41V7785 |
厂家: | Mitsubishi Group |
描述: | RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, FM 放大器 晶体管 |
文件: | 总1页 (文件大小:163K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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