MGFC42V3436_04 [MITSUBISHI]
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET; 3.4 - 3.6GHz的波段16W内部匹配的GaAs FET
| 型号： | MGFC42V3436_04 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
Unit: millimeters
24+/-0.3
R1.25
(1)
0.6+/-0.15
FEATURES
Class A operation
R1.2
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
(2)
GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
(3)
20.4+/-0.2
13.4
IM3=-45dBc(Min.) @Po=32dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital radio communication
QUALITY GRADE
IG
(2): SOURCE (FLANGE)
(3): DRAIN
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 4.5 (A)
GF-18
RG=25 (ohm)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
(Ta=25deg.C)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
-15
Unit
V
VGDO
VGSO
-15
V
ID
15
A
IGR
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
-40
mA
mA
W
IGF
84
PT
Tch
*1
78.9
175
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25deg.C
(Ta=25deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Typ.
11
Unit
Symbol
Parameter
Test conditions
Min.
Max.
IDSS
gm
Saturated drain current
Transconductance
VDS = 3V , VGS = 0V
VDS = 3V , ID = 4.4A
VDS = 3V , ID = 80mA
-
-
-
-
-
A
S
V
4
-
VGS(off)
Gate to source cut-off voltage
-4.5
Output power at 1dB gain
compression
P1dB
41.5
42.5
-
dBm
GLP
ID
Linear power gain
VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz
12
14
4.5
37
-45
-
-
dB
A
Drain current
-
-
-
-
P.A.E.
IM3
Power added efficiency
3rd order IM distortion *1
%
-42
-
-
dBc
deg.C/W
Rth(ch-c)
Thermal resistance
*2
delta Vf method
1.9
*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz
*2 : Channel-case
June/2004
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
June/2004
MITSUBISHI
ELECTRIC
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