MGFC42V3742_04 [MITSUBISHI]
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET; 3.7 〜 4.2GHz波段16W内部匹配的GaAs FET
| 型号： | MGFC42V3742_04 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3742
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
Unit: millimeters (inches)
OUTLINE DRAWING
The MGFC42V3742 is an internally impedance-matched
GaAs power FET especially designed for use in 3.7 ~ 4.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
24+/-0.3
R1.25
(1)
0.6+/-0.15
FEATURES
Class A operation
R1.2
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=3.7~4.2GHz
High power gain
(2)
GLP = 11 dB (TYP.) @ f=3.7~4.2GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.7~4.2GHz
Low distortion [ item -51 ]
(3)
IM3= -45 dBc(TYP.) @Po=31(dBm) S.C.L.
20.4+/-0.2
13.4
APPLICATION
item 01 : 3.7~4.2 GHz band power amplifier
item 51 : 3.7~4.2 GHz band digital radio communication
QUALITY GRADE
IG
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
GF-18
RECOMMENDED BIAS CONDITIONS
VDS = 10(V)
ID = 4.5 (A)
Rg = 25(ohm) Refer to Bias Procedure
(Ta=25 deg.C)
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
-15
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
-15
V
15
A
IGR
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-40
mA
mA
W
IGF
84
PT
78.9
175
Tch
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25 deg.C
(Ta=25 deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
9
Max.
IDSS
gm
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear power gain
VDS=3V, VGS=0V
VDS=3V, ID=4.4A
VDS=3V, ID=80mA
-
12
-
A
S
-
-2
41.5
9
4
VGS(off)
P1dB
GLP
ID
-3
-4
-
V
42.5
11
4.5
32
-45
-
dBm
dB
A
VDS=10V, ID(RF off)=4.5A, f=3.7~4.2GHz
-
Drain current
-
-
P.A.E.
IM3
Power added efficiency
-
-
%
3rd order IM distortion
*1
*2
-42
-
-
dBc
Rth(ch-c) Thermal resistance
Delta Vf method
1.9 deg.C/W
*1 : item -51, 2 tone test, Po=31dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz
*2 : Channel to case
June/2004
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3742
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
June/2004
MITSUBISHI
ELECTRIC
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