MGFC42V3742A [MITSUBISHI]
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET; 3.7- 4.2GHz波段16W内部匹配的GaAs FET
| 型号： | MGFC42V3742A |
| 厂家： | 
Mitsubishi Group |
| 描述： | 3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
MGFC42V3742A-01
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MITSUBISHI
MGFC42V4450-51
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
MITSUBISHI
MGFC42V4450A-01
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MITSUBISHI
MGFC42V4450A-51
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MITSUBISHI
MGFC42V5258-01
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MITSUBISHI
MGFC42V5258-51
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明