MGFC42V3436 [MITSUBISHI]
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET; 3.4 - 3.6GHz的波段16W内部匹配的GaAs FET
| 型号： | MGFC42V3436 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
Unit: millimeters
24+/-0.3
R1.25
N
I
(1)
3
0.6+/-0.15
M
2
.
.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
2
0
0
R1.2
-
/
-
/
+
0
.
8
.
+
4
.
7
1
5
1
(2)
8
GLP = 13 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz
N
I
M
2
(3)
2
.
Low distortion [item -51]
0
-
/
+
4
.
IM3=-45dBc(Min.) @Po=32dBm S.C.L.
20.4+/-0.2
13.4
4
.
0
-
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
1
.
0
/
+
0
.
2
item 51 : 3.4 - 3.6 GHz band digital ratio communication
4
.
1
4
QUALITY GRADE
IG
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
GF-18
ID = 4.5 (A)
RG=25 (ohm)
< Keep safety first in your circuit designs! >
(Ta=25deg.C)
ABSOLUTE MAXIMUM RATINGS
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
Symbol
Parameter
Gate to drain voltage
Ratings
-15
Unit
V
VGDO
VGSO
Gate to source voltage
Drain current
-15
V
ID
12
A
IGR
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
-40
mA
mA
W
IGF
84
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
PT
Tch
*1
78.9
175
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25deg.C
(Ta=25deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
Test conditions
Min.
Typ.
11
4
Max.
IDSS
gm
VDS = 3V , VGS = 0V
VDS = 3V , ID = 4.4A
VDS = 3V , ID = 80mA
-
-
-
-
-
A
S
V
Saturated drain current
Transconductance
VGS(off)
-
-4.5
Gate to source cut-off voltage
Output power at 1dB gain
compression
P1dB
41.5
42.5
-
dBm
GLP
ID
VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz
12
13
4.5
37
-45
-
-
-
dB
A
Linear power gain
-
-
Drain current
P.A.E.
IM3
-
%
Power added efficiency
3rd order IM distortion *1
-42
-
-
dBc
deg.C/W
Rth(ch-c)
delta Vf method
1.9
Thermal resistance
*2
*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz
*2 : Channel-case
MITSUBISHI
ELECTRIC
Sep. 1998
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V3436
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
Po,PAE vs. Pin
P1dB,GLP vs. f
45
40
35
30
25
20
50
40
30
20
10
0
45
19
18
17
16
15
14
13
VDS=10(V)
IDS=4.5(A)
f=3.5(GHz)
VDS=10(V)
IDS=4.5(A)
Po
P1dB
44
43
42
GLP
PAE
41
40
39
10
15
20
25
30
35
3.3
3.4
3.5
3.6
3.7
FREQUENCY f(GHz)
INPUT POWER Pin (dBm)
Po,PAE vs. Pin
45
40
35
30
25
20
50
40
30
20
10
0
VDS=10(V)
IDS=4.5(A)
f=3.5(GHz)
Po
PAE
10
15
20
25
30
35
INPUT POWER Pin (dBm)
S parameters ( Ta=25deg.C , VDS=10(V),IDS=4.5(A) )
S-Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
3.30
Magn.
0.43
0.30
0.25
0.23
0.30
0.36
0.39
0.42
0.43
Angle(deg)
-19
Magn.
4.592
5.044
5.124
5.188
5.114
4.895
4.758
4.546
4.433
Angle(deg)
Magn.
0.04
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
Angle(deg)
Magn.
0.40
0.31
0.26
0.20
0.18
0.19
0.20
0.24
0.25
Angle(deg)
10
133
112
103
82
74
55
42
21
4
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
-56
-14
-80
-26
-138
-179
154
-59
63
-96
45
-20
-29
-43
-52
-129
-139
-157
-163
143
37
126
21
118
14
MITSUBISHI
ELECTRIC
Sep. 1998
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