MGF0906A-01 [MITSUBISHI]
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET, METAL PACKAGE-2;
| 型号： | MGF0906A-01 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET, METAL PACKAGE-2 |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
MGF0906B-01
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN
MITSUBISHI
MGF0907A-01
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET, METAL PACKAGE-2
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明