M66282FP [MITSUBISHI]
8192 x 8-BIT LINE MEMORY; 8192 ×8位直插内存![M66282FP](http://pdffile.icpdf.com/pdf1/p00070/img/icpdf/M66282_370671_icpdf.jpg)
型号: | M66282FP |
厂家: | ![]() |
描述: | 8192 x 8-BIT LINE MEMORY |
文件: | 总12页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
The M66282FP is high speed line memory that uses high
performance silicon gate CMOS process technology and adopts
the FIFO (First In First Out) structure consisting of 8192 words x 8
bits.
The M66282FP, performing reading and writing operations at
different cycles independently and asynchronously, is optimal for
Q0
Q1
1
2
24
23
22
21
20
19
18
17
16
15
14
13
D0
D1
buffer memory to be used between equipment of different data
processing speeds.
DATA INPUT
DATA OUTPUT
Q2
D2
3
Q3
D3
4
READ ENABLE
INPUT
READ RESET
INPUT
FEATURES
WRITE ENABLE
INPUT
WRITE RESET
INPUT
REB
WEB
WRESB
5
• Memory configuration
• High speed cycle
• High speed access
• Output hold
8192 words x 8 bits (dynamic memory)
25 ns (Min.)
18 ns (Max.)
RRESB
GND
RCK
Q4
6
VCC
WCK
D4
7
3 ns (Min.)
READ CLOCK
INPUT
WRITE CLOCK
INPUT
8
• Reading and writing operations can be completely carried out
independently and asynchronously.
• Variable length delay bit
9
Q5
D5
10
11
12
• Input/output
• Output
TTL direct connection allowable
3 states
DATA OUTPUT
DATA INPUT
Q6
Q7
D6
D7
APPLICATION
• Digital copying machine
,
laser beam printer, high speed facsimile,
Outline 24P2Q-A(SSOP)
etc.
FUNCTION
When write enable input WEB is set to "L", the contents of data
inputs D0 to D7 are read in synchronization with a rising edge of
write lock input WCK to perform writing operation. When this is the
case,the write address counter is also incremented simultaneously.
When WEB is set to "H", the writing operation is inhibited and the
write address counter stops.
When write reset input WRESB is set to "L", the write address
counter is initialized.
When read enable input REB is set to "L", the contents of memory
are output to data outputs Q0 to Q7 in synchronization with a rising
edge of read clock input RCK to perform reading operation. When
this is the case, the read address counter is incremented
simultaneously.
When REB is set to "H", the reading operation is inhibited and the
read address counter stops. The outputs are placed in a high
impedance state.
When read reset input RRESB is set to "L", the read address
counter is initialized.
1
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
Read control circuit
Read address counter
Write address counter
Write control circuit
2
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
ABSOLUTE MAXIMUM RATINGS (Ta=0 – 70 °C unless otherwise noted)
Symbol
Parameter
Conditions
Unit
Ratings
Vcc
Supply voltage
-0.3 – +4.6
-0.3 – VCC+0.3
-0.3 – VCC+0.3
300
V
V
VI
Input voltage
Value based on the GND pin
VO
Pd
Tstg
Output voltage
V
mW
Power dispersion
Storage temperature
-55 – 150
°C
RECOMMENDED OPERATING CONDITIONS
Limits
Typ.
3.15
0
Symbol
Parameter
Unit
Min.
2.7
Max.
3.6
Vcc
Supply voltage
Supply voltage
V
V
GND
Topr
0
70
Operating temperature
°C
ELECTRICAL CHARACTERISTICS (Ta=0 – 70 °C, Vcc=2.7 – 3.6V, GND=0V unless otherwise noted)
Limits
Symbol
Parameter
Conditions
Unit
Min.
2.0
Typ.
Max.
0.8
VIH
VIL
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
V
V
V
V
VOH
VOL
IOH = -4mA
IOL = 4mA
VCC-0.4
0.4
WEB, WRESB, WCK,
High-level input current
µ A
µ A
IIH
IIL
VI = VCC
REB, RRESB, RCK,
D0 – D7
1.0
WEB, WRESB, WCK,
REB, RRESB, RCK,
D0 – D7
-1.0
VI = GND
Low-level input current
µ A
µ A
IOZH
IOZL
Off-state high-level output current
Off-state low-level output current
VO = VCC
5.0
VO = GND
-5.0
VI = VCC, GND, output open
tWCK, tRCK = 25ns
mA
ICC
Average supply current during operation
70
10
15
pF
pF
CI
Input capacitance
f = 1MHz
f = 1MHz
CO
Off-time output capacitance
3
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
SWITCHING CHARACTERISTICS (Ta=0 – 70 °C, Vcc=2.7 – 3.6V, GND=0V unless otherwise noted)
Limits
Parameter
Symbol
Unit
Min.
Typ.
Max.
18
ns
ns
ns
ns
tAC
Access time
tOH
Output hold time
Output enable time
Output disable time
3
3
3
tOEN
tODIS
18
18
TIMING REQUIREMENTS (Ta=0 – 70 °C, Vcc=2.7 – 3.6V, GND=0V unless otherwise noted)
Limits
Typ.
Parameter
Symbol
Unit
Min.
25
11
11
25
11
11
7
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
tWCK
tWCKH
tWCKL
tRCK
Write clock (WCK) cycle
Write clock (WCK) "H" pulse width
Write clock (WCK) "L" pulse width
Read clock (RCK) cycle
tRCKH
tRCKL
tDS
Read clock (RCK) "H" pulse width
Read clock (RCK) "L" pulse width
Input data set up time for WCK
Input data hold time for WCK
Reset set up time for WCK/RCK
Reset hold time for WCK/RCK
tDH
3
tRESS
tRESH
tNRESS
tNRESH
tWES
tWEH
tNWES
tNWEH
tRES
7
3
Reset non-selection set up time for WCK/RCK
Reset non-selection hold time for WCK/RCK
WEB set up time for WCK
7
3
7
WEB hold time for WCK
3
WEB non-selection set up time for WCK
WEB non-selection hold time for WCK
REB set up time for RCK
7
3
7
tREH
REB hold time for RCK
3
tNRES
tNREH
tr, tf
REB non-selection set up time for RCK
REB non-selection hold time for RCK
Input pulse up/down time
7
3
20
20
tH
Data hold time (Note 1)
Note 1: For 1 line access, the following conditions must be satisfied:
WEB high-level period ≤ 20 ms - 8192 • tWCK - WRESB low-level period
REB high-level period ≤ 20 ms - 8192 • tRCK - RRESB low-level period
2: Perform reset operation after turning on power supply.
4
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT
VCC
RL=1KΩ
SW1
Qn
Qn
SW2
CL = 5pF : tOEN, tODIS
CL = 30pF : tAC, tOH
RL=1KΩ
Input pulse level
Input pulse up/down time
Judging voltage Input
Output
: 0 – 3V
: 3 ns
: 1.3V
Item
SW1
Close
Open
Close
Open
SW2
Open
Close
Open
Close
tODIS(LZ)
: 1.3V(However, tODIS(LZ) is judged with 10% of the
output amplitude, while tODIS(HZ) is judged with
90% of the output amplitude.)
tODIS(HZ)
tOEN(ZL)
tOEN(ZH)
Load capacitance CL includes the floating capacity of connected lines and input
capacitance of probe.
tODIS and tOEN measurement condition
3V
1.3V
1.3V
RCK
GND
3V
REB
GND
tOEN(ZH)
tOEN(ZL)
tODIS(HZ)
VOH
90%
Qn
Qn
1.3V
1.3V
tODIS(LZ)
10%
VOL
5
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
OPERATION TIMING
• Write cycle
n cycle
n+1 cycle
n+2 cycle
Disable cycle
n+3 cycle
n+4 cycle
WCK
WEB
tWCKH tWCKL
tWEH tNWES
tNWEH
tWES
tWCK
tDS tDH
(n)
(n+1)
(n+2)
(n+3)
(n+4)
Dn
WRESB = "H"
• Write reset cycle
n cycle
0 cycle
1 cycle
2 cycle
n-1 cycle
Reset cycle
WCK
tWCK
tNRESH tRESS
tRESH tNRESS
WRESB
tDS tDH
(n-1)
(n)
(0)
(1)
(2)
Dn
WEB = "L"
6
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
• Matters that needs attetion when WCK stops
n+1 cycle
n cycle
tWCK
n cycle
Disable cycle
WCK
WEB
tNWES
tDS tDH
tDS tDH
(n)
(n)
Dn
Period for writing data
(n) into memory
Period for writing data
(n) into memory
WRESB = "H"
Input data of n cycle is read at the rising edge after WCK of n cycle and writing operation starts in the WCK low-level period of n+1
cycle. The writing operation is complete at the falling edge after n+1 cycle.
To stop reading write data at n cycle, enter WCK before the rising edge after n+1 cycle.
When the cycle next to n cycle is a disable cycle, WCK for a cycle requires to be entered after the disable cycle as well.
7
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
• Read cycle
n+1 cycle
n+2 cycle
n+3 cycle
n+4 cycle
n cycle
tRCK
Disable cycle
RCK
REB
Qn
tNREH
tRES
tRCKH tRCKL tREH tNRES
tAC
tOEN
tODIS
HIGH-Z
(n)
(n+1)
(n+2)
(n+3)
tOH
(n+4)
RRESB = "H"
• Read reset cycle
n-1 cycle
n cycle
Reset cycle
0 cycle
1 cycle
2 cycle
RCK
tRCK
tNRESH tRESS
tRESH
tNRESS
RRESB
tAC
(0)
(n)
(0)
(0)
(1)
(2)
(n-1)
Qn
tOH
REB = "L"
8
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
VARIABLE LENGTH DELAY BIT
• 1 line (8192 bits) delay
Input data can be written at the rising edge of WCK after write cycle and output data is read at the rising edge of RCK before read
cycle to easily make 1 line delay.
8192 cycle 8193 cycle 8194 cycle
1 cycle
2 cycle
8190 cycle
8191 cycle
0 cycle
(0')
(1')
(2')
WCK
RCK
tRESH
tRESS
WRESB
RRESB
tDS tDH
tDS tDH
(0')
(1')
(2')
(3')
Dn
Qn
(0)
(1)
(2)
(8189)
(8190)
(8191)
8192 cycle
tAC
tOH
(0)
(1)
(2)
(3)
WEB, REB = "L"
• n-bit delay bit
(Reset at cycles according to the delay length)
n cycle
(0')
n+1 cycle n+2 cycle n+3 cycle
(1') (2') (3')
n-2 cycle
n-1 cycle
0 cycle
1 cycle
2 cycle
WCK
RCK
tRESS tRESH
tRESS tRESH
WRESB
RRESB
tDS tDH
tDS tDH
(0')
(n-3)
(n-2)
(n-1)
Dn
Qn
(0)
(1)
(2)
(1')
(2')
(3')
m cycle
tAC
tOH
(0)
(1)
(2)
(3)
WEB, REB = "L"
9
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
• n-bit delay 2
(Slides input timings of WRESB and RRESB at cycles according to the delay length.)
0 cycle
1 cycle
2 cycle
n-2 cycle
n-1 cycle
n cycle
n+1 cycle n+2 cycle n+3 cycle
WCK
RCK
tRESS tRESH
WRESB
tRESS tRESH
RRESB
Dn
tDS tDH
tDS tDH
(n+1)
(0)
(1)
(2)
(n-2)
(n-1)
(n)
(n+2)
(n+3)
m cycle
tAC
tOH
Qn
(0)
(1)
(2)
(3)
WEB, REB = "L"
m≥3
• n-bit delay 3
(Slides address by disabling REB in the period according to the delay length.)
0 cycle
1 cycle
2 cycle
n-1 cycle
n cycle
n+1 cycle n+2 cycle n+3 cycle
WCK
RCK
tRESS tRESH
WRESB
RRESB
tNREH tRES
REB
Dn
tDS tDH
(n)
tDS tDH
(0)
(1)
(2)
(n-2)
(n-1)
(n+1)
(n+2)
(n+3)
m cycle
tAC
tOH
(0)
HIGH-Z
Qn
(1)
(2)
(3)
WEB = "L"
m≥3
10
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
• Reading shortest n-cycle write data "n"
(Reading side n-1 cycle starts after the end of writing side n-1 cycle.)
When the reading side n-1 cycle starts before the end of the writing side n+1 cycle, output Qn of n cycle is made invalid.
In the following diagram, reading operation of n-1 cycle is invalid.
n cycle
n+1 cycle
n+2 cycle
n+3 cycle
WCK
Dn
(n)
(n+1)
(n+2)
(n+3)
n-2 cycle
n-1 cycle
n cycle
RCK
Qn
(n)
invalid
• Reading longest n-cycle write data "n": 1 line delay
(When writing side n-cycle <2>* starts, reading side n cycle <1>* then starts.)
Output Qn of n cycle <1>* can be read until the start of reading side n cycle <1> and the start of writing side n cycle <2>* overlap each
other.
n cycle <2>*
n cycle <1>*
0 cycle <2>*
WCK
(n-1)<1>*
(n)<1>*
(0)<2>*
(n-1)<2>*
(n)<2>*
Dn
n cycle <0>*
0 cycle <1>*
n cycle <1>*
RCK
Qn
(0)<1>*
(n-1)<1>*
(n)<1>*
(n-1)<0>*
(n)<0>*
<0>*, <1>* and <2>* indicate value of lines.
11
MITSUBISHI <DIGITAL ASSP>
M66282FP
8192 x 8-BIT LINE MEMORY
APPLICATION EXAMPLE
Sub Scan Resolution Compensation Circuit with Laplacean Filter
N
M66282
n line image data
D0
D7
Q0
Q7
B
(n+1) line
image data
X2
Compensated
image data
1 line
delay
XK
M66282
D0
D7
Q0
Q7
A
(n-1) line
image data
1 line
delay
Main scan direction
(n-1) line
n line
A
N
B
(n+1) line
N'=N+K { (N-A) + (N-B) }
=N+K { (2N - (A+B) }
K: Laplacean coefficient
12
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