M66282FP [MITSUBISHI]

8192 x 8-BIT LINE MEMORY; 8192 ×8位直插内存
M66282FP
型号: M66282FP
厂家: Mitsubishi Group    Mitsubishi Group
描述:

8192 x 8-BIT LINE MEMORY
8192 ×8位直插内存

文件: 总12页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M66282FP is high speed line memory that uses high  
performance silicon gate CMOS process technology and adopts  
the FIFO (First In First Out) structure consisting of 8192 words x 8  
bits.  
The M66282FP, performing reading and writing operations at  
different cycles independently and asynchronously, is optimal for  
Q0  
Q1  
1
2
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
D0  
D1  
buffer memory to be used between equipment of different data  
processing speeds.  
DATA INPUT  
DATA OUTPUT  
Q2  
D2  
3
Q3  
D3  
4
READ ENABLE  
INPUT  
READ RESET  
INPUT  
FEATURES  
WRITE ENABLE  
INPUT  
WRITE RESET  
INPUT  
REB  
WEB  
WRESB  
5
• Memory configuration  
• High speed cycle  
• High speed access  
• Output hold  
8192 words x 8 bits (dynamic memory)  
25 ns (Min.)  
18 ns (Max.)  
RRESB  
GND  
RCK  
Q4  
6
VCC  
WCK  
D4  
7
3 ns (Min.)  
READ CLOCK  
INPUT  
WRITE CLOCK  
INPUT  
8
• Reading and writing operations can be completely carried out  
independently and asynchronously.  
• Variable length delay bit  
9
Q5  
D5  
10  
11  
12  
• Input/output  
• Output  
TTL direct connection allowable  
3 states  
DATA OUTPUT  
DATA INPUT  
Q6  
Q7  
D6  
D7  
APPLICATION  
• Digital copying machine  
,
laser beam printer, high speed facsimile,  
Outline 24P2Q-A(SSOP)  
etc.  
FUNCTION  
When write enable input WEB is set to "L", the contents of data  
inputs D0 to D7 are read in synchronization with a rising edge of  
write lock input WCK to perform writing operation. When this is the  
case,the write address counter is also incremented simultaneously.  
When WEB is set to "H", the writing operation is inhibited and the  
write address counter stops.  
When write reset input WRESB is set to "L", the write address  
counter is initialized.  
When read enable input REB is set to "L", the contents of memory  
are output to data outputs Q0 to Q7 in synchronization with a rising  
edge of read clock input RCK to perform reading operation. When  
this is the case, the read address counter is incremented  
simultaneously.  
When REB is set to "H", the reading operation is inhibited and the  
read address counter stops. The outputs are placed in a high  
impedance state.  
When read reset input RRESB is set to "L", the read address  
counter is initialized.  
1
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
Read control circuit  
Read address counter  
Write address counter  
Write control circuit  
2
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
ABSOLUTE MAXIMUM RATINGS (Ta=0 – 70 °C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Unit  
Ratings  
Vcc  
Supply voltage  
-0.3 +4.6  
-0.3 VCC+0.3  
-0.3 VCC+0.3  
300  
V
V
VI  
Input voltage  
Value based on the GND pin  
VO  
Pd  
Tstg  
Output voltage  
V
mW  
Power dispersion  
Storage temperature  
-55 150  
°C  
RECOMMENDED OPERATING CONDITIONS  
Limits  
Typ.  
3.15  
0
Symbol  
Parameter  
Unit  
Min.  
2.7  
Max.  
3.6  
Vcc  
Supply voltage  
Supply voltage  
V
V
GND  
Topr  
0
70  
Operating temperature  
°C  
ELECTRICAL CHARACTERISTICS (Ta=0 – 70 °C, Vcc=2.7 – 3.6V, GND=0V unless otherwise noted)  
Limits  
Symbol  
Parameter  
Conditions  
Unit  
Min.  
2.0  
Typ.  
Max.  
0.8  
VIH  
VIL  
High-level input voltage  
Low-level input voltage  
High-level output voltage  
Low-level output voltage  
V
V
V
V
VOH  
VOL  
IOH = -4mA  
IOL = 4mA  
VCC-0.4  
0.4  
WEB, WRESB, WCK,  
High-level input current  
µ A  
µ A  
IIH  
IIL  
VI = VCC  
REB, RRESB, RCK,  
D0 D7  
1.0  
WEB, WRESB, WCK,  
REB, RRESB, RCK,  
D0 D7  
-1.0  
VI = GND  
Low-level input current  
µ A  
µ A  
IOZH  
IOZL  
Off-state high-level output current  
Off-state low-level output current  
VO = VCC  
5.0  
VO = GND  
-5.0  
VI = VCC, GND, output open  
tWCK, tRCK = 25ns  
mA  
ICC  
Average supply current during operation  
70  
10  
15  
pF  
pF  
CI  
Input capacitance  
f = 1MHz  
f = 1MHz  
CO  
Off-time output capacitance  
3
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
SWITCHING CHARACTERISTICS (Ta=0 – 70 °C, Vcc=2.7 – 3.6V, GND=0V unless otherwise noted)  
Limits  
Parameter  
Symbol  
Unit  
Min.  
Typ.  
Max.  
18  
ns  
ns  
ns  
ns  
tAC  
Access time  
tOH  
Output hold time  
Output enable time  
Output disable time  
3
3
3
tOEN  
tODIS  
18  
18  
TIMING REQUIREMENTS (Ta=0 – 70 °C, Vcc=2.7 – 3.6V, GND=0V unless otherwise noted)  
Limits  
Typ.  
Parameter  
Symbol  
Unit  
Min.  
25  
11  
11  
25  
11  
11  
7
Max.  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
tWCK  
tWCKH  
tWCKL  
tRCK  
Write clock (WCK) cycle  
Write clock (WCK) "H" pulse width  
Write clock (WCK) "L" pulse width  
Read clock (RCK) cycle  
tRCKH  
tRCKL  
tDS  
Read clock (RCK) "H" pulse width  
Read clock (RCK) "L" pulse width  
Input data set up time for WCK  
Input data hold time for WCK  
Reset set up time for WCK/RCK  
Reset hold time for WCK/RCK  
tDH  
3
tRESS  
tRESH  
tNRESS  
tNRESH  
tWES  
tWEH  
tNWES  
tNWEH  
tRES  
7
3
Reset non-selection set up time for WCK/RCK  
Reset non-selection hold time for WCK/RCK  
WEB set up time for WCK  
7
3
7
WEB hold time for WCK  
3
WEB non-selection set up time for WCK  
WEB non-selection hold time for WCK  
REB set up time for RCK  
7
3
7
tREH  
REB hold time for RCK  
3
tNRES  
tNREH  
tr, tf  
REB non-selection set up time for RCK  
REB non-selection hold time for RCK  
Input pulse up/down time  
7
3
20  
20  
tH  
Data hold time (Note 1)  
Note 1: For 1 line access, the following conditions must be satisfied:  
WEB high-level period 20 ms - 8192 • tWCK - WRESB low-level period  
REB high-level period 20 ms - 8192 • tRCK - RRESB low-level period  
2: Perform reset operation after turning on power supply.  
4
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT  
VCC  
RL=1KΩ  
SW1  
Qn  
Qn  
SW2  
CL = 5pF : tOEN, tODIS  
CL = 30pF : tAC, tOH  
RL=1KΩ  
Input pulse level  
Input pulse up/down time  
Judging voltage Input  
Output  
: 0 – 3V  
: 3 ns  
: 1.3V  
Item  
SW1  
Close  
Open  
Close  
Open  
SW2  
Open  
Close  
Open  
Close  
tODIS(LZ)  
: 1.3V(However, tODIS(LZ) is judged with 10% of the  
output amplitude, while tODIS(HZ) is judged with  
90% of the output amplitude.)  
tODIS(HZ)  
tOEN(ZL)  
tOEN(ZH)  
Load capacitance CL includes the floating capacity of connected lines and input  
capacitance of probe.  
tODIS and tOEN measurement condition  
3V  
1.3V  
1.3V  
RCK  
GND  
3V  
REB  
GND  
tOEN(ZH)  
tOEN(ZL)  
tODIS(HZ)  
VOH  
90%  
Qn  
Qn  
1.3V  
1.3V  
tODIS(LZ)  
10%  
VOL  
5
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
OPERATION TIMING  
Write cycle  
n cycle  
n+1 cycle  
n+2 cycle  
Disable cycle  
n+3 cycle  
n+4 cycle  
WCK  
WEB  
tWCKH tWCKL  
tWEH tNWES  
tNWEH  
tWES  
tWCK  
tDS tDH  
(n)  
(n+1)  
(n+2)  
(n+3)  
(n+4)  
Dn  
WRESB = "H"  
Write reset cycle  
n cycle  
0 cycle  
1 cycle  
2 cycle  
n-1 cycle  
Reset cycle  
WCK  
tWCK  
tNRESH tRESS  
tRESH tNRESS  
WRESB  
tDS tDH  
(n-1)  
(n)  
(0)  
(1)  
(2)  
Dn  
WEB = "L"  
6
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
Matters that needs attetion when WCK stops  
n+1 cycle  
n cycle  
tWCK  
n cycle  
Disable cycle  
WCK  
WEB  
tNWES  
tDS tDH  
tDS tDH  
(n)  
(n)  
Dn  
Period for writing data  
(n) into memory  
Period for writing data  
(n) into memory  
WRESB = "H"  
Input data of n cycle is read at the rising edge after WCK of n cycle and writing operation starts in the WCK low-level period of n+1  
cycle. The writing operation is complete at the falling edge after n+1 cycle.  
To stop reading write data at n cycle, enter WCK before the rising edge after n+1 cycle.  
When the cycle next to n cycle is a disable cycle, WCK for a cycle requires to be entered after the disable cycle as well.  
7
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
Read cycle  
n+1 cycle  
n+2 cycle  
n+3 cycle  
n+4 cycle  
n cycle  
tRCK  
Disable cycle  
RCK  
REB  
Qn  
tNREH  
tRES  
tRCKH tRCKL tREH tNRES  
tAC  
tOEN  
tODIS  
HIGH-Z  
(n)  
(n+1)  
(n+2)  
(n+3)  
tOH  
(n+4)  
RRESB = "H"  
Read reset cycle  
n-1 cycle  
n cycle  
Reset cycle  
0 cycle  
1 cycle  
2 cycle  
RCK  
tRCK  
tNRESH tRESS  
tRESH  
tNRESS  
RRESB  
tAC  
(0)  
(n)  
(0)  
(0)  
(1)  
(2)  
(n-1)  
Qn  
tOH  
REB = "L"  
8
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
VARIABLE LENGTH DELAY BIT  
1 line (8192 bits) delay  
Input data can be written at the rising edge of WCK after write cycle and output data is read at the rising edge of RCK before read  
cycle to easily make 1 line delay.  
8192 cycle 8193 cycle 8194 cycle  
1 cycle  
2 cycle  
8190 cycle  
8191 cycle  
0 cycle  
(0')  
(1')  
(2')  
WCK  
RCK  
tRESH  
tRESS  
WRESB  
RRESB  
tDS tDH  
tDS tDH  
(0')  
(1')  
(2')  
(3')  
Dn  
Qn  
(0)  
(1)  
(2)  
(8189)  
(8190)  
(8191)  
8192 cycle  
tAC  
tOH  
(0)  
(1)  
(2)  
(3)  
WEB, REB = "L"  
n-bit delay bit  
(Reset at cycles according to the delay length)  
n cycle  
(0')  
n+1 cycle n+2 cycle n+3 cycle  
(1') (2') (3')  
n-2 cycle  
n-1 cycle  
0 cycle  
1 cycle  
2 cycle  
WCK  
RCK  
tRESS tRESH  
tRESS tRESH  
WRESB  
RRESB  
tDS tDH  
tDS tDH  
(0')  
(n-3)  
(n-2)  
(n-1)  
Dn  
Qn  
(0)  
(1)  
(2)  
(1')  
(2')  
(3')  
m cycle  
tAC  
tOH  
(0)  
(1)  
(2)  
(3)  
WEB, REB = "L"  
9
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
n-bit delay 2  
(Slides input timings of WRESB and RRESB at cycles according to the delay length.)  
0 cycle  
1 cycle  
2 cycle  
n-2 cycle  
n-1 cycle  
n cycle  
n+1 cycle n+2 cycle n+3 cycle  
WCK  
RCK  
tRESS tRESH  
WRESB  
tRESS tRESH  
RRESB  
Dn  
tDS tDH  
tDS tDH  
(n+1)  
(0)  
(1)  
(2)  
(n-2)  
(n-1)  
(n)  
(n+2)  
(n+3)  
m cycle  
tAC  
tOH  
Qn  
(0)  
(1)  
(2)  
(3)  
WEB, REB = "L"  
m3  
n-bit delay 3  
(Slides address by disabling REB in the period according to the delay length.)  
0 cycle  
1 cycle  
2 cycle  
n-1 cycle  
n cycle  
n+1 cycle n+2 cycle n+3 cycle  
WCK  
RCK  
tRESS tRESH  
WRESB  
RRESB  
tNREH tRES  
REB  
Dn  
tDS tDH  
(n)  
tDS tDH  
(0)  
(1)  
(2)  
(n-2)  
(n-1)  
(n+1)  
(n+2)  
(n+3)  
m cycle  
tAC  
tOH  
(0)  
HIGH-Z  
Qn  
(1)  
(2)  
(3)  
WEB = "L"  
m3  
10  
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
Reading shortest n-cycle write data "n"  
(Reading side n-1 cycle starts after the end of writing side n-1 cycle.)  
When the reading side n-1 cycle starts before the end of the writing side n+1 cycle, output Qn of n cycle is made invalid.  
In the following diagram, reading operation of n-1 cycle is invalid.  
n cycle  
n+1 cycle  
n+2 cycle  
n+3 cycle  
WCK  
Dn  
(n)  
(n+1)  
(n+2)  
(n+3)  
n-2 cycle  
n-1 cycle  
n cycle  
RCK  
Qn  
(n)  
invalid  
Reading longest n-cycle write data "n": 1 line delay  
(When writing side n-cycle <2>* starts, reading side n cycle <1>* then starts.)  
Output Qn of n cycle <1>* can be read until the start of reading side n cycle <1> and the start of writing side n cycle <2>* overlap each  
other.  
n cycle <2>*  
n cycle <1>*  
0 cycle <2>*  
WCK  
(n-1)<1>*  
(n)<1>*  
(0)<2>*  
(n-1)<2>*  
(n)<2>*  
Dn  
n cycle <0>*  
0 cycle <1>*  
n cycle <1>*  
RCK  
Qn  
(0)<1>*  
(n-1)<1>*  
(n)<1>*  
(n-1)<0>*  
(n)<0>*  
<0>*, <1>* and <2>* indicate value of lines.  
11  
MITSUBISHI <DIGITAL ASSP>  
M66282FP  
8192 x 8-BIT LINE MEMORY  
APPLICATION EXAMPLE  
Sub Scan Resolution Compensation Circuit with Laplacean Filter  
N
M66282  
n line image data  
D0  
D7  
Q0  
Q7  
B
(n+1) line  
image data  
X2  
Compensated  
image data  
1 line  
delay  
XK  
M66282  
D0  
D7  
Q0  
Q7  
A
(n-1) line  
image data  
1 line  
delay  
Main scan direction  
(n-1) line  
n line  
A
N
B
(n+1) line  
N'=N+K { (N-A) + (N-B) }  
=N+K { (2N - (A+B) }  
K: Laplacean coefficient  
12  

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