APTM50DDA10T3G [MICROSEMI]
Dual Boost chopper MOSFET Power Module; 双升压斩波MOSFET功率模块
| 型号： | APTM50DDA10T3G |
| 厂家： | 
Microsemi |
| 描述： | Dual Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DDA10T3G
VDSS = 500V
RDSon = 100mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 37A @ Tc = 25°C
13 14
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Q1
CR2
22
23
7
8
Features
•
Power MOS 7® MOSFETs
Q2
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
26
27
4
3
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
29
30
31
R1
32
15
16
-
Symmetrical design
•
•
Internal thermistor for temperature monitoring
High level of integration
28 27 26 25
23 22
20 19 18
Benefits
29
30
16
15
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
RoHS Compliant
2
3
4
7
8
10 11
12
•
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
37
28
140
±30
120
312
37
50
1600
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 - 6
APTM50DDA10T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 18.5A
100
IDSS
Zero Gate Voltage Drain Current
µA
500
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
100
120
mΩ
V
nA
VGS = VDS, ID = 1mA
3
5
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
4367
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
894
61
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
96
24
VGS = 10V
VBus = 250V
ID = 37A
nC
49
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
15
21
73
52
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 37A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5Ω
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
566
545
µJ
µJ
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
931
635
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
VR=600V
250
500
Tj = 125°C
Tc = 80°C
40
1.45
1.35
Tj = 25°C
Tj = 125°C
VF
Diode Forward Voltage
IF = 40A
V
Tj = 25°C
95
115
2.6
4
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 40A
Tj = 125°C
VR = 300V
Tj = 25°C
di/dt=2600A/µs
Qrr
µC
Tj = 125°C
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2 - 6
APTM50DDA10T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.4
1.5
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3 - 6
APTM50DDA10T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.9
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
100
80
60
40
20
0
140
120
100
80
8V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=10&15V
7.5V
7V
6.5V
60
TJ=25°C
40
6V
20
5.5V
TJ=125°C
TJ=-55°C
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
40
30
20
10
0
Normalized to
GS=10V @ 18.5A
VGS=10V
V
VGS=20V
0
20
40
60
80
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 - 6
APTM50DDA10T3G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=18.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
Single pulse
TJ=150°C
TC=25°C
10ms
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VDS=100V
VDS=250V
ID=37A
TJ=25°C
12
10
8
Ciss
VDS=400V
Coss
6
4
Crss
2
10
0
0
10
20
30
40
50
0
20 40 60 80 100 120 140
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 - 6
APTM50DDA10T3G
Delay Times vs Current
Rise and Fall times vs Current
80
60
40
20
0
100
VDS=333V
RG=5Ω
td(off)
80
TJ=125°C
L=100µH
tf
VDS=333V
60
40
RG=5Ω
TJ=125°C
L=100µH
td(on)
50
20
0
tr
10
20
30
40
60
70
10
20
30
40
50
60
70
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
2
2
1.6
1.2
0.8
0.4
0
VDS=333V
RG=5Ω
VDS=333V
ID=35A
Eoff
Eon
TJ=125°C
L=100µH
TJ=125°C
L=100µH
1.5
1
Eon
Eoff
Eoff
0.5
0
0
10
20
30
40
50
10
20
30
40
50
60
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
450
VDS=333V
D=50%
400
350
300
250
200
150
100
50
RG=5Ω
TJ=125°C
ZCS
TJ=150°C
TC=75°C
ZVS
hard
switching
TJ=25°C
0
1
5
10
15
20
25
30
35
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关型号：
APTM50DDAM65T3
Power Field-Effect Transistor, 51A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
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