APTM50DHM35 [ADPOW]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM50DHM35 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DHM35
VDSS = 500V
Asymmetrical - bridge
RDSon = 35mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 99A @ Tc = 25°C
Application
Sꢁ Welding converters
Sꢁ Switched Mode Power Supplies
Sꢁ Switched Reluctance Motor Drives
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
Sꢁ High level of integration
OUT1
Benefits
G1
S1
VBUS
0/VBUS
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Low profile
S4
G4
OUT2
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
500
99
V
Tc = 25°C
Tc = 80°C
ID
A
74
IDM
VGS
Pulsed Drain current
396
±30
35
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
781
51
50
3000
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM50DHM35
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 375µA
500
V
VGS = 0V,VDS = 500V Tj = 25°C
150
750
35
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 49.5A
VGS = VDS, ID = 5mA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
14
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
2.80
0.18
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
280
80
VGS = 10V
VBus = 250V
ID = 99A
nC
Qgd
Td(on)
Tr
Gate – Drain Charge
Turn-on Delay Time
Rise Time
140
21
38
75
93
Inductive switching @ 125°C
V
GS = 15V
VBus = 333V
ID = 99A
ns
Td(off) Turn-off Delay Time
Tf
RG = 1ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
2070
1690
3112
2026
V
GS = 15V, VBus = 333V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 99A, RG = 1Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 100A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 80°C
100
1.6
1.9
1.4
A
1.8
VF
Diode Forward Voltage
IF = 200A
V
IF = 100A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 100A
180
220
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 400V
di/dt = 200A/µs
IF = 100A
390
Qrr
VR = 400V
nC
1450
di/dt = 200A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTM50DHM35
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.16
0.6
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
3.5
280
Wt
Package Weight
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM50DHM35
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
300
250
200
150
100
50
400
300
200
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7V
6.5V
TJ=25°C
6V
TJ=125°C
5.5V
5V
TJ=-55°C
0
0
2
4
6
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
1.1
1.05
1
Normalized to
VGS=10V @ 49.5A
100
80
60
40
20
0
VGS=10V
VGS=20V
0.95
0.9
0
20
40
60
80
100 120
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
4 – 6
APT website – http://www.advancedpower.com
APTM50DHM35
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=49.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 us
limited by RDSon
100
10
1
1 ms
10 ms
Single pulse
TJ=150°C
100 ms
1
10
100
1000
-50 -25
0
25 50 75 100 125 150
V
DS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
14
12
10
8
100000
10000
1000
100
VDS=100V
ID=99A
Ciss
TJ=25°C
VDS=250V
Coss
VDS=400V
6
Crss
4
2
0
10
0
50 100 150 200 250 300 350
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM50DHM35
Delay Times vs Current
Rise and Fall times vs Current
80
70
60
50
40
30
20
10
160
140
120
100
80
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
tf
td(off)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
10
VDS=333V
ID=99A
VDS=333V
RG=1Ω
Eon
Eoff
5
4
3
2
1
0
8
6
4
2
0
TJ=125°C
L=100µH
TJ=125°C
L=100µH
Eon
Eoff
0
5
10
15
20
25
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
450
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=1Ω
TJ=150°C
100
10
1
TJ=125°C
TJ=25°C
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
10 20 30 40 50 60 70 80 90
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
相关型号：
©2020 ICPDF网 联系我们和版权申明