APTM50DHM65T3G [MICROSEMI]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM50DHM65T3G |
| 厂家： | 
Microsemi |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总5页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DHM65T3G
VDSS = 500V
Asymmetrical - Bridge
MOSFET Power Module
R
DSon = 65mΩ typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
13
14
Application
Q1
•
•
•
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
CR3
18
19
22
7
Features
•
Power MOS 8™ MOSFETs
23
8
Q4
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
CR2
4
3
29
30
31
32
•
•
Kelvin source for easy drive
Very low stray inductance
15
16
R1
-
Symmetrical design
•
•
Internal thermistor for temperature monitoring
High level of integration
28 27 26 25
23 22
20 19 18
29
16
15
Benefits
30
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
Low profile
RoHS Compliant
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23…
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
51
38
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
270
±30
78
V
mΩ
W
PD
Maximum Power Dissipation
Tc = 25°C
390
IAR
Avalanche current (repetitive and non repetitive)
42
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTM50DHM65T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
DS = 500V
VGS = 0V
Min Typ Max Unit
Tj = 25°C
250
V
IDSS
Zero Gate Voltage Drain Current
µA
Tj = 125°C
1000
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
VGS = 10V, ID = 42A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
65
4
78
5
mΩ
V
3
IGSS
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
10800
1164
148
Max Unit
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
V
GS = 0V
DS = 25V
pF
f = 1MHz
Qg
Qgs
Qgd
Td(on)
Tr
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
340
75
V
GS = 10V
VBus = 250V
ID = 42A
nC
ns
155
60
Resistive switching @ 25°C
GS = 15V
V
70
VBus = 333V
ID = 42A
RG = 2.2Ω
Td(off) Turn-off Delay Time
Tf Fall Time
155
50
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
600
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
250
500
VR=600V
60
1.7
2
IF = 60A
IF = 120A
2.3
VF
Diode Forward Voltage
V
IF = 60A
Tj = 125°C
Tj = 25°C
1.4
70
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 400V
di/dt = 200A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
140
100
690
Qrr
nC
2 – 5
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APTM50DHM65T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
MOSFET
Diode
0.32
0.85
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
4000
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To Heatsink
M4
N.m
g
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
3 – 5
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APTM50DHM65T3G
Typical MOSFET Performance Curve
Low Voltage Output Characteristics
Low Voltage Output Characteristics
160
140
120
100
80
250
VGS=7,8 &10V
6.5V
VGS=10V
TJ=25°C
200
6V
150
5.5V
100
60
TJ=125°C
40
50
0
20
TJ=125°C
0
0
5
10
15
20
0
5
10
15
20
25
30
V
DS, Drain to Source Voltage (V)
VDS, Drain to Source Voltage (V)
Transfert Characteristics
Normalized RDSon vs. Temperature
125
2.5
2
VDS > ID(on)xRDS(on)MAX
VGS=10V
250µs pulse test @ < 0.5 duty cycle
100
75
50
25
0
ID=42A
TJ=125°C
1.5
1
TJ=25°C
6
0.5
25
50
75
100
125
150
0
1
2
3
4
5
7
TJ, Junction Temperature (°C)
V
GS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
12
VDS=100V
VDS=250V
ID=42A
TJ=25°C
10
8
Ciss
VDS=400V
6
Coss
Crss
4
2
10
0
0
50
100
150
200
0
60
120
180
240
300
360
V
DS, Drain to Source Voltage (V)
Gate Charge (nC)
Drain Current vs Source to Drain Voltage
125
100
TJ=125°C
75
50
TJ=25°C
25
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.25
0.2
0.7
0.5
0.15
0.1
0.3
0.1
0.05
0
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 – 5
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APTM50DHM65T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
175
150
125
100
75
200
160
120
80
TJ=125°C
VR=400V
120 A
TJ=125°C
30 A
TJ=25°C
60 A
40
0
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
IRRM vs. Current Rate of Charge
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
5
TJ=125°C
120 A
VR=400V
TJ=125°C
120 A
VR=400V
60 A
60 A
30 A
30 A
0
0
200 400 600 800 1000 1200
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
DC Forward Current vs. Case Temp.
500
400
300
200
100
0
100
80
60
40
20
0
Duty Cycle = 0.5
TJ=175°C
1
10
100
1000
25
50
75
100 125 150 175
VR, Reverse Voltage (V)
Case Temperature (°C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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