APTM50DHM65TG [MICROSEMI]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM50DHM65TG |
| 厂家： | 
Microsemi |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DHM65TG
VDSS = 500V
Asymmetrical - Bridge
RDSon = 65mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 51A @ Tc = 25°C
VBUS
Application
VBUS SENSE
•
•
•
Welding converters
Q1
Switched Mode Power Supplies
Switched Reluctance Motor Drives
CR3
G1
Features
S1
OUT1
OUT2
•
Power MOS 7® MOSFETs
Q4
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
CR2
G4
S4
Avalanche energy rated
Very rugged
0/VBUSSENSE
NTC1
•
•
Kelvin source for easy drive
Very low stray inductance
0/VBUS
NTC2
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
G4
S4
VBUS
OUT2
OUT1
SENSE
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
G1
NTC2
NTC1
0/VBUS
SENSE
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
51
38
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
PD
Pulsed Drain current
204
±30
78
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
390
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
51
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 – 6
APTM50DHM65TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
100
500
78
5
±100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 400V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 25.5A
65
mΩ
V
nA
VGS = VDS, ID = 2.5mA
3
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
7000
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1400
90
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
140
40
70
21
38
75
93
VGS = 10V
VBus = 250V
ID = 51A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 51A
RG = 3Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
Eon
Turn-on Switching Energy
1035
845
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
1556
1013
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
VR=600V
250
500
Tj = 125°C
Tc = 70°C
60
1.6
1.9
IF = 60A
1.8
IF = 120A
VF
Diode Forward Voltage
V
IF = 60A
Tj = 125°C
1.4
130
170
220
920
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 400V
di/dt = 200A/µs
Qrr
nC
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2 – 6
APTM50DHM65TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.32
0.9
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3 – 6
APTM50DHM65TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.5
0.3
0.25
0.2
0.15
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
150
125
100
75
200
160
120
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7V
6.5V
TJ=25°C
50
6V
40
25
TJ=125°C
5.5V
5V
TJ=-55°C
0
0
0
2
4
6
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
60
RDS(on) vs Drain Current
1.1
1.05
1
Normalized to
=10V @ 25.5A
V
50
40
30
20
10
0
VGS=10V
VGS=20V
0.95
0.9
0
10
20
30
40
50
60
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM50DHM65TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 25.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 us
limited by RDSon
1 ms
10 ms
Single pulse
TJ=150°C
TC=25°C
1
100 ms
0.1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
14
12
10
8
100000
10000
1000
100
VDS=100V
ID=51A
TJ=25°C
VDS=250V
Ciss
Coss
VDS=400V
6
4
Crss
2
0
10
0
25 50 75 100 125 150 175
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM50DHM65TG
Delay Times vs Current
Rise and Fall times vs Current
80
70
60
50
40
30
20
10
160
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
140
120
100
80
tf
td(off)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
10 20 30 40 50 60 70 80
10 20 30 40 50 60 70 80
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
2.5
2
5
4
3
2
1
0
VDS=333V
ID=51A
TJ=125°C
L=100µH
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
Eoff
Eon
Eon
1.5
1
Eoff
Eoff
0.5
0
0
5
10 15 20 25 30 35 40 45
10 20 30 40 50 60 70 80
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
450
400
350
300
250
200
150
100
50
1000
100
10
VDS=333V
D=50%
ZVS
ZCS
RG=3Ω
TJ=125°C
TC=75°C
TJ=150°C
TJ=25°C
hard
switching
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
10 15 20 25 30 35 40 45
ID, Drain Current (A)
V
SD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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