APTM50DHM65T [ADPOW]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM50DHM65T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DHM65T
VDSS = 500V
Asymmetrical - Bridge
RDSon = 65mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 51A @ Tc = 25°C
VBUS
Application
VBUS SENSE
Sꢁ Welding converters
Q1
Sꢁ Switched Mode Power Supplies
Sꢁ Switched Reluctance Motor Drives
CR3
G1
Features
S1
OUT1
OUT2
Sꢁ Power MOS 7® MOSFETs
Q4
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
CR2
G4
S4
Avalanche energy rated
Very rugged
0/VBUS SENSE
NTC1
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
0/VBUS
NTC2
-
-
Symmetrical design
Lead frames for power connections
Sꢁ Internal thermistor for temperature monitoring
Sꢁ High level of integration
G4
S4
VBUS
OUT2
OUT1
SENSE
Benefits
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
NTC2
NTC1
0/VBUS
SENSE
G1
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
51
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
38
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
204
±30
65
V
mꢀ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
390
51
50
3000
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM50DHM65T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
V
VGS = 0V,VDS= 500V Tj = 25°C
VGS = 0V,VDS= 400V Tj = 125°C
VGS = 10V, ID = 25.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
100
500
65
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
7000
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1400
90
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
140
40
70
21
38
75
93
VGS = 10V
VBus = 250V
ID = 51A
nC
Qgd
Td(on)
Tr
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
Td(off) Turn-off Delay Time
Tf
ID = 51A
RG = 3ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
1035
845
V
GS = 15V, VBus = 333V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 51A, RG = 3Ω
Inductive switching @ 125°C
1556
1013
V
GS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 60A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 70°C
60
1.6
1.9
1.4
A
1.8
IF = 120A
VF
Diode Forward Voltage
V
IF = 60A
IF = 60A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
130
170
220
920
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 400V
di/dt = 200A/µs
IF = 60A
Qrr
nC
VR = 400V
di/dt = 200A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTM50DHM65T
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.32
0.9
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
150
125
100
4.7
°C
TSTG
-40
-40
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢀ
B25/85 T25 = 298.16 K
4080
K
R25
RT
ꢃ
T: Thermistor temperature
RT: Thermistor value at T
!
1
2
3
ꢁ
.
/
/
1
1
T
25 / 85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM50DHM65T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.5
0.3
0.25
0.2
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
150
125
100
75
200
160
120
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7V
6.5V
TJ=25°C
50
6V
40
25
TJ=125°C
5.5V
5V
TJ=-55°C
0
0
0
2
4
6
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
60
RDS(on) vs Drain Current
1.1
1.05
1
Normalized to
VGS=10V @ 25.5A
50
40
30
20
10
0
VGS=10V
VGS=20V
0.95
0.9
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
4 – 6
APT website – http://www.advancedpower.com
APTM50DHM65T
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 25.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 us
limited by RDSon
100
10
1
1 ms
10 ms
Single pulse
TJ=150°C
100 ms
0.1
1
10
100
1000
-50 -25
0
25 50 75 100 125 150
V
DS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
14
12
10
8
100000
10000
1000
100
VDS=100V
ID=51A
TJ=25°C
VDS=250V
Ciss
Coss
VDS=400V
6
4
Crss
2
0
10
0
25 50 75 100 125 150 175
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM50DHM65T
Delay Times vs Current
Rise and Fall times vs Current
80
70
60
50
40
30
20
10
160
140
120
100
80
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
tf
td(off)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
10 20 30 40 50 60 70 80
10
20
30
40
50
60
70
80
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
2.5
2
5
4
3
2
1
0
VDS=333V
ID=51A
TJ=125°C
L=100µH
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
Eoff
Eon
Eon
1.5
1
Eoff
0.5
0
0
5
10 15 20 25 30 35 40 45
10 20 30 40 50 60 70 80
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
400
350
300
250
200
150
100
50
1000
100
10
VDS=333V
D=50%
RG=3Ω
TJ=125°C
TJ=150°C
TJ=25°C
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
10 15 20 25 30 35 40 45
ID, Drain Current (A)
V
SD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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MICROSEMI
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