APTM50DAM19G [MICROSEMI]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM50DAM19G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DAM19G
VDSS = 500V
RDSon = 19mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 163A @ Tc = 25°C
Application
VBUS
CR1
•
AC and DC motor control
•
•
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
G2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
S2
0/VBUS
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
VBUS
0/VBUS
OUT
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S2
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
500
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
163
ID
Continuous Drain Current
A
Tc = 80°C
122
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
652
±30
V
mΩ
W
22.5
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
1136
46
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 – 6
APTM50DAM19G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 81.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
200
1000
22.5
5
±200
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
19
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
22.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.8
0.36
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
492
132
260
18
35
87
VGS = 10V
VBus = 250V
ID = 163A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 163A
Tf
Fall Time
RG = 1Ω
77
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
3020
2904
4964
3384
µJ
µJ
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 70°C
350
600
VR=600V
120
1.6
1.9
1.4
IF = 120A
IF = 240A
IF = 120A
1.8
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
130
170
440
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 120A
VR = 400V
di/dt = 400A/µs
Qrr
nC
1840
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2 – 6
APTM50DAM19G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.11
0.46
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3 – 6
APTM50DAM19G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
500
400
300
200
100
0
700
600
500
400
300
200
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
180
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
GS=10V @ 81.5A
VGS=10V
160
140
120
100
80
60
40
20
V
VGS=20V
0
0
100
200
300
400
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM50DAM19G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=81.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by RDSon
100µs
100
10
1
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VDS=100V
VDS=250V
ID=163A
TJ=25°C
Ciss
12
10
8
Coss
Crss
VDS=400V
6
4
2
10
0
0
10
20
30
40
50
0
80 160 240 320 400 480 560 640
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM50DAM19G
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
td(on)
tr
20
60
100 140 180 220 260
20
60
100 140 180 220 260
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
10
8
VDS=333V
ID=163A
TJ=125°C
VDS=333V
RG=1Ω
14
12
10
8
Eon
Eoff
TJ=125°C
L=100µH
L=100µH
6
Eoff
Eon
4
6
4
Eoff
2
2
0
0
0
2.5
5
7.5
10
12.5
20
60 100 140 180 220 260
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
TJ=150°C
ZVS
ZCS
VDS=333V
D=50%
TJ=25°C
RG=1Ω
TJ=125°C
TC=75°C
Hard
switching
0
1
0
20 40 60 80 100 120 140
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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