APTM50DAM38CT [ADPOW]
Boost chopper SiC FWD diode MOSFET Power Module; 升压斩波碳化硅二极管的正向MOSFET功率模块
| 型号： | APTM50DAM38CT |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Boost chopper SiC FWD diode MOSFET Power Module |
| 文件： | 总7页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DAM38CT
VDSS = 500V
Boost chopper
SiC FWD diode
RDSon = 38mꢀ max @ Tj = 25°C
ID = 90A @ Tc = 25°C
MOSFET Power Module
Application
Sꢁ AC and DC motor control
Sꢁ Switched Mode Power Supplies
Sꢁ Power Factor Correction
NTC2
VBUS
VBUS SENSE
CR1
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
OUT
Q2
Avalanche energy rated
G2
S2
Sꢁ FWD SiC Schottky Diode
-
-
-
-
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
0/VBUS
NTC1
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance²
-
-
Symmetrical design
Lead frames for power connections
Sꢁ Internal thermistor for temperature monitoring
Sꢁ High level of integration
G2
S2
OUT
OUT
Benefits
VBUS
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Solderable terminals both for power and signal for
easy PCB mounting
0/VBUS
S2
G2
NTC2
NTC1
VBUS
SENSE
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
500
90
V
Tc = 25°C
Tc = 80°C
ID
A
67
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
360
±30
38
694
46
50
2500
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
Maximum Power Dissipation
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 7
APT website – http://www.advancedpower.com
APTM50DAM38CT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 375µA
500
3
V
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
150
750
38
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on)
Drain – Source on Resistance
V
GS = 10V, ID = 45A
mꢀ
V
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 5mA
5
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
11.2
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
2.36
0.18
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
246
66
VGS = 10V
VBus = 250V
ID = 90A
nC
Qgd
Td(on)
Tr
130
18
35
87
77
Inductive switching @ 125°C
V
GS = 15V
VBus = 333V
ID = 90A
ns
Td(off) Turn-off Delay Time
Tf
RG = 2ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy
906
V
GS = 15V, VBus = 333V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy
Turn-off Switching Energy ꢀ
ID = 90A, RG = 2Ω
1452
1490
1692
Inductive switching @ 125°C
V
GS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
ꢀ In accordance with JEDEC standard JESD24-1.
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
50% duty cycle
IF(AV)
Maximum Average Forward Current
Tc = 125°C
Tj = 25°C
Tj = 175°C
60
1.6
2.0
A
1.8
2.4
VF
Diode Forward Voltage
IF = 60A
V
IF = 60A, VR = 300V
di/dt =1600A/µs
QC
Q
Total Capacitive Charge
Total Capacitance
84
nC
pF
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
390
300
2 – 7
APT website – http://www.advancedpower.com
APTM50DAM38CT
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.18
0.45
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min,I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
150
125
100
4.7
°C
TSTG
-40
-40
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢀ
B25/85 T25 = 298.16 K
4080
K
R25
RT
ꢃ
T: Thermistor temperature
RT: Thermistor value at T
!
1
2
3
ꢁ
.
/
/
1
1
T
25 / 85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 – 7
APT website – http://www.advancedpower.com
APTM50DAM38CT
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.16
0.14
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
250
200
150
100
50
350
300
250
200
150
100
50
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
100
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
VGS=10V @ 45A
VGS=10V
80
60
40
20
0
VGS=20V
0
50
100
150
200
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 7
APT website – http://www.advancedpower.com
APTM50DAM38CT
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=45A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by RDSon
100µs
1ms
10ms
Single pulse
TJ=150°C
100ms
1000
1
-50 -25
0
25 50 75 100 125 150
1
10
100
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VCE=100V
VCE=250V
ID=90A
TJ=25°C
12
10
8
Ciss
Coss
VCE=400V
6
Crss
4
2
10
0
0
10
20
30
40
50
0
40 80 120 160 200 240 280 320
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APT website – http://www.advancedpower.com
APTM50DAM38CT
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
td(on)
tr
20
40
60
80
100 120 140
20
40
60
80
100 120 140
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
7
6
5
4
3
2
1
0
4
3
2
1
0
VDS=333V
ID=90A
TJ=125°C
L=100µH
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Eoff
Eoff
Eon
Eon
20
0
5
10
15
25
20
40
60
80
100 120 140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=2Ω
TJ=150°C
TJ=125°C
TJ=25°C
0
1
20
30
40
50
60
70
80
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
6 – 7
APT website – http://www.advancedpower.com
APTM50DAM38CT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.45
0.4
0.9
0.35
0.3
0.25
0.2
0.15
0.7
0.5
0.3
0.1
0.05
0
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
120
90
60
30
0
1200
1000
800
TJ=25°C
TJ=175°C
TJ=75°C
TJ=175°C
TJ=125°C
TJ=125°C
600
400
200
0
TJ=75°C
TJ=25°C
0
0.5
1
1.5
2
2.5
3
3.5
200 300 400 500 600 700 800
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
2500
2000
1500
1000
500
0
1
10
100
1000
VR Reverse Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
7 – 7
APT website – http://www.advancedpower.com
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MICROSEMI
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