APTM50DAM38T [ADPOW]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM50DAM38T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DAM38T
VDSS = 500V
Boost chopper
RDSon = 38mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 90A @ Tc = 25°C
Application
NTC2
VBUS
Sꢁ AC and DC motor control
Sꢁ Switched Mode Power Supplies
Sꢁ Power Factor Correction
VBUS SENSE
CR1
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
OUT
Low input and Miller capacitance
Low gate charge
Q2
Avalanche energy rated
Very rugged
G2
S2
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
0/VBUS
NTC1
Lead frames for power connections
Sꢁ Internal thermistor for temperature monitoring
Sꢁ High level of integration
Benefits
G2
S2
OUT
OUT
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S2
G2
NTC2
NTC1
VBUS
SENSE
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
500
90
V
Tc = 25°C
Tc = 80°C
ID
A
67
IDM
VGS
Pulsed Drain current
360
±30
38
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
694
46
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM50DAM38T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 375µA
500
V
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
150
750
38
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
11.2
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
2.4
0.18
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
246
66
VGS = 10V
VBus = 250V
ID = 90A
nC
Qgd
Td(on)
Tr
130
18
35
87
77
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
Td(off) Turn-off Delay Time
Tf
ID = 90A
RG = 2ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
1510
1452
2482
1692
V
GS = 15V, VBus = 333V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 90A, RG = 2Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 60 A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 70°C
60
1.6
1.9
1.4
A
1.8
IF = 120 A
VF
Diode Forward Voltage
V
IF = 60 A
IF = 60A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
130
170
220
920
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 400V
di/dt = 200A/µs
IF = 60A
Qrr
nC
VR = 400V
di/dt = 200A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTM50DAM38T
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.18
0.9
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
150
125
100
4.7
°C
TSTG
-40
-40
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢀ
B25/85 T25 = 298.16 K
4080
K
R25
RT
ꢃ
T: Thermistor temperature
RT: Thermistor value at T
!
1
2
3
ꢁ
.
/
/
1
1
T
25 / 85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM50DAM38T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.16
0.14
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
250
200
150
100
50
350
300
250
200
150
100
50
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
100
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
VGS=10V @ 45A
VGS=10V
80
60
40
20
0
VGS=20V
0
50
100
150
200
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM50DAM38T
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=45A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by RDSon
100
10
1
100µs
1ms
10ms
Single pulse
TJ=150°C
100ms
1000
-50 -25
0
25 50 75 100 125 150
1
10
100
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VCE=100V
VCE=250V
ID=90A
TJ=25°C
12
10
8
Ciss
Coss
VCE=400V
6
Crss
4
2
10
0
0
10
20
30
40
50
0
40 80 120 160 200 240 280 320
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM50DAM38T
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
td(on)
tr
20
40
60
80
100 120 140
20
40
60
80
100 120 140
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
VDS=333V
RG=2Ω
VDS=333V
Eon
ID=90A
TJ=125°C
L=100µH
Eoff
TJ=125°C
L=100µH
Eoff
Eon
0
5
10
15
20
25
20
40
60
80
100 120 140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=2Ω
TJ=150°C
TJ=125°C
TJ=25°C
0
1
20
30
40
50
60
70
80
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
相关型号：
APTM50DDAM65T3
Power Field-Effect Transistor, 51A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
MICROSEMI
©2020 ICPDF网 联系我们和版权申明