APT36GA60SD15 [MICROSEMI]
High Speed PT IGBT; 高速PT IGBT
| 型号： | APT36GA60SD15 |
| 厂家： | 
Microsemi |
| 描述： | High Speed PT IGBT |
| 文件： | 总9页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT36GA60BD15
APT36GA60SD15
600V
High Speed PT IGBT
APT36GA60SD15
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is
achieved through leading technology silicon design and lifetime control processes. A
reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT
technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excel-
lent noise immunity, short delay times and simple gate drive. The intrinsic chip gate
resistance and capacitance of the poly-silicone gate structure help control di/dt during
switching, resulting in low EMI, even when switching at high frequency.
D3PAK
APT36GA60BD15
Combi (IGBT and Diode)
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• Low gate charge
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Ratings
Unit
Collector Emitter Voltage
600
V
Vces
IC1
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
65
36
A
IC2
ICM
109
VGE
Gate-Emitter Voltage 2
±30
V
PD
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
290
W
SSOA
TJ, TSTG
TL
109A @ 600V
-55 to 150
°C
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Static Characteristics
Symbol Parameter
T = 25°C unless otherwise specified
J
Test Conditions
Min
Typ
Max
Unit
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1.0mA
600
TJ = 25°C
TJ = 125°C
2.0
1.9
4.5
2.5
VGE = 15V,
IC = 20A
V
VCE(on)
VGE(th)
ICES
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE =VCE , IC = 1mA
3
6
TJ = 25°C
275
VCE = 600V,
VGE = 0V
μA
TJ = 125°C
3000
±100
IGES
VGS = ±30V
nA
Microsemi Website - http://www.microsemi.com
APT36GA60B_SD15
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Cies
Parameter
Test Conditions
Capacitance
Min
Typ
2880
226
328
102
18
Max
Unit
Input Capacitance
Coes
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
pF
Cres
3
Qg
Total Gate Charge
Gate Charge
Qge
Gate-Emitter Charge
VGE = 15V
VCE= 300V
nC
A
Qgc
Gate- Collector Charge
36
IC = 20A
TJ = 150°C, RG = 10Ω4, VGE = 15V,
L= 100uH, VCE = 600V
Inductive Switching (25°C)
VCC = 400V
SSOA
Switching Safe Operating Area
109
td(on)
tr
td(off)
tf
Turn-On Delay Time
Current Rise Time
16
14
ns
μJ
ns
μJ
Turn-Off Delay Time
Current Fall Time
122
77
VGE = 15V
IC = 20A
RG = 10Ω4
Eon2
Eoff
td(on)
tr
Turn-On Switching Energy
307
254
14
6
Turn-Off Switching Energy
TJ = +25°C
Turn-On Delay Time
Current Rise Time
Inductive Switching (125°C)
15
VCC = 400V
td(off)
tf
Turn-Off Delay Time
Current Fall Time
149
113
508
439
VGE = 15V
IC = 20A
RG = 10Ω4
Eon2
Eoff
Turn-On Switching Energy
6
Turn-Off Switching Energy
TJ = +125°C
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RθJC
Junction to Case Thermal Resistance (IGBT)
-
-
.43
°C/W
RθJC
WT
Junction to Case Thermal Resistance (Diode)
Package Weight
1.35
-
-
5.9
g
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
10
in·lbf
1
2
3
4
5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Pulse test: Pulse Width < 380μs, duty cycle < 2%.
See Mil-Std-750 Method 3471.
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
6
Typical Performance Curves
APT36GA60BD_S15
280
240
200
160
120
80
60
15V
V
= 15V
GE
13V
50
40
30
20
10
0
TJ= 125°C
TJ= 150°C
TJ= 55°C
TJ= 25°C
12V
11V
10V
9V
40
8V
6V
0
0
V
4
8
12 16 20
24 28 32
0
1
2
3
4
5
6
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics (T = 25°C)
FIGURE 2, Output Characteristics (T = 25°C)
J
J
16
14
12
10
300
250
200
150
100
50
250μs PULSE
TEST<0.5 % DUTY
CYCLE
I
= 20A
C
T
= 25°C
J
V
= 120V
CE
V
= 300V
CE
V
= 480V
8
CE
6
4
2
0
TJ= 25°C
TJ= -55°C
TJ= 125°C
0
0
2
4
6
8
10
12
14
0
10 20 30 40 50 60 70 80 90 100
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 4, Gate charge
FIGURE 3, Transfer Characteristics
5
4
3
2
1
0
4
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3
2
1
0
I
= 40A
C
I
= 20A
C
I
= 40A
= 20A
C
I
C
I
= 10A
C
I
= 10A
C
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
0
25
50
75
100
125
150
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.15
80
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
70
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE
T , Case Temperature (°C)
J
C
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
APT36GA60BD_S15
200
160
120
80
20
18
16
VGE =15V,TJ=125°C
V
= 15V
VGE =15V,TJ=25°C
GE
14
12
10
VCE = 400V
TJ = 25°C, or 125°C
G = 10ꢀ
40
VCE = 400V
RG = 10ꢀ
L = 100μH
R
L = 100μH
0
0
5
10
15 20 25 30
35 40
0
I
5
10 15 20
, COLLECTOR-TO-EMITTER CURRENT (A)
25 30 35
40
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
40
35
30
25
20
15
10
5
150
R
G = 10ꢀ, L = 100μH, VCE = 400V
R
G = 10ꢀ, L = 100μH, VCE = 400V
125
100
75
50
25
0
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
0
0
5
10
15
20 25 30
35 40
, COLLECTOR-TO-EMITTER CURRENT(A)
CE
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
CE
FIGURE 12, Current Fall Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
1200
1000
800
1500
1250
1000
750
V
V
=
=
400V
+15V
V
V
=
=
400V
+15V
CE
GE
CE
GE
R
= 10ꢀ
R
=10ꢀ
G
G
TJ = 125°C
TJ = 125°C
600
400
500
TJ = 25°C
200
250
TJ = 25°C
0
0
0
5
10 15 20 25
30 35 40
0
5
10 15
20 25 30
35 40
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn-Off Energy Loss vs Collector Current
2000
1800
1600
1400
1200
1000
800
1600
V
V
T
=
=
400V
+15V
V
V
=
=
400V
+15V
CE
GE
CE
GE
= 125°C
1400
1200
1000
800
R
= 10ꢀ
J
G
Eon2,40A
Eon2,40A
Eoff,40A
Eoff,40A
600
Eon2,20A
Eoff,20A
Eon2,20A
Eoff,20A
600
400
Eon2,10A
Eoff,10A
400
Eon2,10A
Eoff,10A
200
200
0
0
0
10
G
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 15, Switching Energy Losses vs Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT36GA60B_SD15
10000
200
100
Cies
1000
10
1
Coes
100
10
Cres
0.1
0
100
200
300
400
500
1
10
100
800
V
, COLLECTOR-TO-EMITTER VOLTAGE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
CE
FIGURE 18, Minimum Switching Safe Operating Area
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.50
0.45
D = 0.9
0.40
0.35
0.7
0.30
0.25
0.5
Note:
0.20
t
1
0.3
0.15
0.10
0.05
0
t
2
t
1
t
/
2
0.1
Duty Factor D =
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
SINGLE PULSE
10-3
-4
10-5
10
10 -2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT36GA60BD_S15
10%
Gate Voltage
td(on)
T
= 125°C
J
90%
APT15DQ60
tr
Collector Current
Collector Voltage
10%
VCE
VCC
IC
5%
5%
Switching Energy
A
D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
T
= 125°C
90%
td(off)
J
Gate Voltage
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: TC = 25°C unless otherwise specified.
APT36GA60B_SD15
Unit
15
30
IF(AV)
IF(RMS)
IFSM
Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Amps
110
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Type
2.0
Max
Unit
IF = 15A
IF = 30A
Forward Voltage
2.5
Volts
VF
1.56
IF = 15A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 1A, diF/dt = -100A/µs ,
VR = 30V, TJ = 25°C
Reverse Recovery Time
trr
-
-
15
ns
Reverse Recovery Time
trr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
21
2
IF = 15A, diF/dt = -200A/µs
Reverse Recovery Charge
Qrr
nC
Amps
ns
V
R = 400V, TC = 25°C
Maximum Reverse Recovery Current
IRRM
trr
Reverse Recovery Time
105
250
5
IF = 15A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
nC
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Qrr
IRRM
trr
Amps
ns
55
420
IF = 15A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Reverse Recovery Charge
nC
Qrr
Maximum Reverse Recovery Current
-
-
Amps
15
IRRM
1.40
D = 0.9
1.20
1.00
0.80
0.60
0.40
0.20
0
0.7
0.5
0.3
Note:
t
1
t
2
t
1
t
/
Duty Factor D =
2
0.1
Peak T = P
x Z
+ T
C
SINGLE PULSE
J
DM
θJC
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dynamic Characteristics
T = 25°C unless otherwise specified
J
APT36GA60B_SD15
60
140
120
T
V
=125°C
=400V
J
R
50
30A
T
= 175°C
J
100
80
40
30
20
15A
T
= 125°C
J
7.5A
60
40
10
0
20
0
T
= 25°C
J
T
= -55°C
J
0
1
2
3
4
0
200 400 600 800 1000 1200 1400 1600
V , ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
F
F
700
600
500
400
300
200
25
T
V
=125°C
=400V
T
V
=125°C
=400V
J
J
R
R
20
15
10
5
30A
30A
15A
15A
7.5A
7.5A
100
0
0
0
200 400 600 800 1000 1200 1400 1600
0
200 400 600 800 1000 1200 1400 1600
-di /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
-di /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
F
F
1.2
35
Duty cycle = 0.5
Q
rr
T
=175°C
J
t
rr
30
25
20
15
10
1.0
0.8
I
RRM
0.6
t
rr
0.4
Q
rr
0.2
0.0
5
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
J
90
80
70
60
50
40
30
20
10
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
Dynamic Characteristics
T = 25°C unless otherwise specified
J
APT36GA60B_SD15
V
r
diF/dt Adjust
+18V
0V
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Collector)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Collector (Cathode)
Emitter (Anode)
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关型号：
©2020 ICPDF网 联系我们和版权申明