APT36N90BC3G [MICROSEMI]
Super Junction MOSFET; 超级结MOSFET
| 型号： | APT36N90BC3G |
| 厂家： | 
Microsemi |
| 描述： | Super Junction MOSFET |
| 文件： | 总5页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
900V
36A
APT36N90BC3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Power Semiconductors
Super Junction MOSFET
D3
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
• Avalanche Energy Rated
g
D
S
dv
• Extreme
/
Rated
dt
• Dual die (parallel)
G
• Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
All Ratings per die: T = 25°C unless otherwise specified.
C
APT36N90BC3G
UNIT
Symbol
Parameter
VDSS
900
36
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
ID
Amps
23
1
IDM
96
Pulsed Drain Current
VGS
Volts
20
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
390
Watts
PD
TJ,TSTG
TL
-55 to 150
260
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
°C
dv
/
50
Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125°C)
V/ns
dt
2
IAR
EAR
EAS
8.8
Amps
Avalanche Current
2
( Id = 8.8A, Vdd = 50V )
( Id = 8.8A, Vdd = 50V )
2.9
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
mJ
1940
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Symbol
BV(DSS)
RDS(on)
MIN
TYP
MAX
UNIT
Volts
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
900
3
Drain-Source On-State Resistance
(VGS = 10V, ID = 18A)
0.10
0.12
100
-
Ohms
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = 20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)
-
-
-
50
-
IDSS
µA
IGSS
-
100
3.5
nA
VGS(th)
2.5
3
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT36N90BC3G
MIN
TYP
MAX
UNIT
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
V
= 0V
7463
6827
167
252
38
GS
V
= 25V
Coss
Crss
pF
nC
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
Qg
4
V
= 10V
Total Gate Charge
GS
V
= 450V
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 36A @ 25°C
D
112
70
INDUCTIVE SWITCHING
V
= 15V
GS
20
ns
µJ
V
= 600V
DD
td(off)
400
25
Turn-off Delay Time
Fall Time
I
= 36A @ 25°C
D
tf
R
= 4.3Ω
G
INDUCTIVE SWITCHING @ 25°C
5
Eon
Eoff
1500
750
Turn-on Switching Energy
V
= 600V, V = 15V
DD
GS
Turn-off Switching Energy
I
= 36A, R = 4.3Ω
D
G
INDUCTIVE SWITCHING @ 125°C
= 600V, V = 15V
5
Eon
Eoff
2130
867
Turn-on Switching Energy
V
DD
GS
Turn-off Switching Energy
I
= 36A, R = 4.3Ω
G
D
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
36
MAX
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current (Body Diode)
96
3
VSD
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = 18A)
6
0.8
1.2
10
Volts
V/ns
dv
/
/
dt
dt
930
T
j = 25°C
trr
ns
(IS = -36A, di
Reverse Recovery Charge
(IS = -36A, di
dt = 100A/µs)
Peak Recovery Current
(IS = -36A, di
dt = 100A/µs)
/dt = 100A/µs)
1230
T
T
T
j = 125°C
35
j = 25°C
Qrr
µC
/
44
70
68
j = 125°C
T
j = 25°C
IRRM
Amps
/
T
j = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.3
31
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/µs
be calculated as PAV = E *f . Pulse width tp limited by Tj max.
AR
3 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.3
Note:
0.15
0.10
0.05
0
t
1
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
0.1
+ T
C
J
DM
θJC
SINGLE PULSE
10-3
0.05
10-2
10-4
10-5
0.1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT36N90BC3G
Typical Performance Curves
120
100
90
80
70
60
50
40
30
20
10
0
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10 &15V
6.5V
5.5V
100
80
60
40
20
0
5V
TJ= -55°C
4.5V
4V
TJ= 25°C
TJ= 125°C
0
1
2
3
4
5
6
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, GATE-TO-SOURCE VOLTAGE (V)
DS
GS
FIGURE 2, Low Voltage Output Characteristics
FIGURE 3, Transfer Characteristics
1.4
1.3
1.2
1.0
1
40
35
30
25
20
15
10
5
NORMALIZED TO
V
= 10V @ 47A
GS
V
= 10V
GS
V
= 20V
GS
0.9
0.8
0
0
10 20 30 40
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
50 60
70 80
25
50
75
100
125
150
T , CASE TEMPERATURE (C°)
C
FIGURE 5, Maximum Drain Current vs Case Temperature
3.0
1.20
2.5
2.0
1.15
1.10
1.05
1
1.5
1.0
0.5
0
0.95
0.90
0
25
50
75
100
125 150
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (C°)
T , Junction Temperature (°C)
J
J
FIGURE 7, On-Resistance vs Temperature
FIGURE 6, Breakdown Voltage vs Temperature
300
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10µs
10
100µs
1ms
10ms
100ms
DC line
1
1
10
100
1000
0
25
50
75
100
125 150
T , Case Temperature (°C)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
C
DS
FIGURE 8, Threshold Voltage vs Temperature
FIGURE 9, Maximum Safe Operating Area
APT36N90BC3G
Typical Performance Curves
60,000
12
10
8
I
= 94A
D
Ciss
10,000
1,000
100
VDS= 180V
VDS= 450V
Coss
VDS= 720V
6
4
2
Crss
10
0
0
10
20
30
40
50
0
50
100 150
200
250
300
V
, DRAIN-TO-SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
DS
g
FIGURE 10, Capacitance vs Drain-To-Source Voltage
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
350
300
T = +150°C
J
300
250
200
150
100
50
td(off)
100
10
1
T = =25°C
J
V
= 600V
DD
R
= 4.3Ω
G
T
= 125°C
J
L = 100μH
td(on)
0
0
10
20
30
(A)
40
50
60
0.3 0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
I
D
FIGURE 12, Source-Drain Diode Forward Voltage
FIGURE 13, Delay Times vs Current
0
3500
3000
2500
2000
1500
1000
500
tf
V
= 600V
V
= 600V
DD
DD
= 4.3Ω
R
= 4.3Ω
R
T
G
G
0
0
0
0
0
0
0
T
= 125°C
= 125°C
J
J
L = 100μH
L = 100μH
Eoff
EON includes
diode reverse recovery.
tr
Eon
0
0
10
20
30
(A)
40
50
60
0
10
20
30
40
50
60
I
I
(A)
D
D
FIGURE 15, Switching Energy vs Current
FIGURE 14 , Rise and Fall Times vs Current
4500
4000
3500
3000
2500
2000
1500
1000
500
Eon
Eoff
V
I
= 600V
DD
= 36A
D
T
= 125°C
J
L = 100μH
EON includes
diode reverse recovery.
0
0
10
20
30
40
50
60
R , GATE RESISTANCE (Ohms)
G
FIGURE 16, Switching Energy vs Gate Resistance
APT36N90BC3G
Typical Performance Curves
Gate Voltage
T
= 125°C
T
= 125°C
J
J
Gate Voltage
10%
90%
Collector Current
td(on)
Collector Current
td(off)
90%
tr
10%
5%
10%
5%
tf
0
Collector Voltage
Collector Voltage
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
APT30DF60
VCE
IC
VDD
G
D.U.T.
Figure 19, Inductive Switching Test Circuit
®
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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