APT37M100L [MICROSEMI]
N-Channel MOSFET; N沟道MOSFET![APT37M100L](http://pdffile.icpdf.com/pdf1/p00107/img/icpdf/APT37M100B2_582900_icpdf.jpg)
型号: | APT37M100L |
厂家: | ![]() |
描述: | N-Channel MOSFET |
文件: | 总4页 (文件大小:279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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APT37M100B2
APT37M100L
1000V, 37A, 0.33Ω Max
N-Channel MOSFET
T-MaxTM
TO-264
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
APT37M100B2
APT37M100L
G
D
S
Single die MOSFET
FEATURES
TYPICAL APPLICATIONS
• PFC and other boost converter
• Fast switching with low EMI/RFI
• Buck converter
• Low RDS(on)
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
37
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
23
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
140
±30
2165
18
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
1135
0.11
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
Junction to Case Thermal Resistance
°C/W
°C
RθCS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
-55
150
300
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
WT
Package Weight
in·lbf
N·m
10
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
1.1
Microsemi Website - http://www.microsemi.com
Static Characteristics
T = 25°C unless otherwise specified
J
APT37M100B2_L
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
VBR(DSS)
V
= 0V, I = 250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
1000
GS
D
∆VBR(DSS)/∆TJ
Reference to 25°C, I = 250µA
D
V/°C
Ω
1.15
0.29
4
V
= 10V, I = 18A
D
RDS(on)
VGS(th)
0.33
5
GS
V
3
V
= VDS, I = 2.5mA
D
GS
∆VGS(th)/∆TJ
mV/°C
-10
V
= 1000V
= 0V
T = 25°C
J
100
500
DS
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
µA
nA
V
T = 125°C
J
GS
V
= ±30V
±100
GS
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Parameter
Test Conditions
Min
Typ
39
Max
Unit
gfs
V
= 50V, I = 18A
S
Forward Transconductance
Input Capacitance
DS
D
Ciss
Crss
Coss
9835
130
825
V
= 0V, V = 25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
pF
4
Co(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
335
170
V
= 0V, V = 0V to 667V
DS
GS
5
Co(er)
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
305
55
V
= 0 to 10V, I = 18A,
GS
D
nC
ns
V
= 500V
DS
145
44
Resistive Switching
V = 667V, I = 18A
DD
tr
td(off)
tf
40
D
R
= 2.2Ω 6 , V
= 15V
GG
150
38
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
IS
37
A
G
Pulsed Source Current
(Body Diode) 1
ISM
140
1
VSD
trr
I
= 18A, T = 25°C, V
= 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
J
GS
3
I
= 18A
1165
33
ns
µC
SD
Qrr
diSD/dt = 100A/µs, T = 25°C
J
I
≤ 18A, di/dt ≤1000A/µs, V = 100V,
DD
SD
V/ns
dv/dt
Peak Recovery dv/dt
10
T = 125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at TJ = 25°C, L = 13.36mH, RG = 2.2Ω, IAS = 18A.
Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4
5
Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.85E-7/VDS^2 + 5.04E-8/VDS + 9.75E-11.
6
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT37M100B2_L
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
V
= 10V
T
= 125°C
GS
J
V
GS= 6, 7, 8 & 9V
TJ = -55°C
TJ = 25°C
5V
TJ = 125°C
TJ = 150°C
4.5V
0
0
5
10
15
20
25
30
0
0
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1, Output Characteristics
Figure 2, Output Characteristics
3.0
2.5
2.0
1.5
1.0
140
120
100
80
NORMALIZED TO
= 10V 18A
VDS> ID(ON)
x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
@
GS
TJ = -55°C
60
TJ = 25°C
40
TJ = 125°C
0.5
0
20
0
-55 -25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
T , JUNCTION TEMPERATURE (°C)
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3, R
vs Junction Temperature
Figure 4, Transfer Characteristics
Ciss
DS(ON)
20,000
10,000
50
40
30
20
TJ = -55°C
TJ = 25°C
TJ = 125°C
1000
Coss
100
10
10
0
Crss
0
5
10
15
20
25
200
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
400
600
800
1000
I , DRAIN CURRENT (A)
V
D
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
140
I
= 18A
D
120
100
80
VDS = 200V
VDS = 500V
TJ = 25°C
60
6
TJ = 150°C
VDS = 800V
40
4
20
0
2
0
0
50 100 150 200 250 300 350 400
0
0.3
0.6
0.9
1.2
1.5
Q , TOTAL GATE CHARGE (nC)
V , SOURCE-TO-DRAIN VOLTAGE (V)
SD
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT37M100B2_L
200
100
200
100
I
I
DM
DM
10
1
10
1
13µs
13µs
100µs
1ms
10ms
100µs
1ms
R
ds(on)
T
T
J = 150°C
C = 25°C
10ms
R
ds(on)
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
100ms
DC line
T = 125°C
J
I
D = ID(T = 25°C)*(T - TC)/125
T
C = 75°C
J
C
0.1
0.1
1
10
100
1000
1
10
100
1000
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
TJ (°C)
TC (°C)
ZEXT are the external thermal
0.0167
0.0401
0.0525
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Dissipated Power
(Watts)
0.0147
0.0330
0.479
Figure 11, Transient Thermal Impedance Model
0.12
0.10
0.08
0.06
0.04
D = 0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
= Pulse Duration
t
1
SINGLE PULSE
1
t
/
2
Duty Factor D =
0.02
0
0.1
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
®
TO-264 (L) Package Outline
T-MAX (B2) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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