APT37F50S [MICROSEMI]
N-Channel FREDFET; N沟道FREDFET
| 型号： | APT37F50S |
| 厂家： | 
Microsemi |
| 描述： | N-Channel FREDFET |
| 文件： | 总4页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT37F50B
APT37F50S
500V, 37A, 0.15Ω Max, t , ≤250ns
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N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
D3PAK
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
rr
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
rss iss
APT37F50B
APT37F50S
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
S
Single die FREDFET
G
FEATURES
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• Low t for high reliability
rr
• PFC and other boost converter
• Buck converter
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Single and two switch forward
• Flyback
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
37
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
24
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
115
±30
780
18
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
520
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
0.24
Junction to Case Thermal Resistance
°C/W
°C
RθCS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
-55
150
300
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
WT
Package Weight
in·lbf
N·m
10
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
1.1
Microsemi Website - http://www.microsemi.com
Static Characteristics
T = 25°C unless otherwise specified
J
APT37F50B_S
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
VBR(DSS)
V
= 0V, I = 250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
500
GS
D
∆VBR(DSS)/∆TJ
Reference to 25°C, I = 250µA
D
V/°C
Ω
0.60
0.13
4
V
= 10V, I = 18A
D
RDS(on)
VGS(th)
0.15
5
GS
V
3
V
= VDS, I = 1mA
D
GS
∆VGS(th)/∆TJ
mV/°C
-10
V
= 600V
= 0V
T = 25°C
J
250
1000
±100
DS
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
µA
nA
V
T = 125°C
J
GS
V
= ±30V
GS
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Parameter
Test Conditions
Min
Typ
27
Max
Unit
gfs
V
= 50V, I = 18A
S
Forward Transconductance
Input Capacitance
DS
D
Ciss
Crss
Coss
5710
75
V
= 0V, V = 25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
615
pF
4
Co(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
355
180
V
= 0V, V = 0V to 333V
DS
GS
5
Co(er)
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
145
32
65
25
29
65
21
V
= 0 to 10V, I = 18A,
GS
D
nC
ns
V
= 250V
DS
Resistive Switching
V = 333V, I = 18A
DD
tr
td(off)
tf
D
R
= 4.7Ω 6 , V
= 15V
GG
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
IS
37
A
G
Pulsed Source Current
(Body Diode) 1
ISM
VSD
trr
115
I
= 18A, T = 25°C, V
= 0V
Diode Forward Voltage
1.0
250
450
V
SD
J
GS
T = 25°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T = 125°C
J
3
I
= 18A
T = 25°C
J
0.88
2.18
8.4
SD
Qrr
µC
A
diSD/dt = 100A/µs
= 100V
T = 125°C
J
V
T = 25°C
J
DD
Irrm
T = 125°C
J
11.8
I
≤ 18A, di/dt ≤1000A/µs, V = 333V,
DD
SD
dv/dt
V/ns
20
T = 125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at TJ = 25°C, L = 4.81mH, RG = 4.7Ω, IAS = 18A.
Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4
5
Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.33E-7/VDS^2 + 3.06E-8/VDS + 8.83E-11.
6
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT37F50B_S
70
60
50
40
30
20
140
120
100
80
V
= 10V
T
= 125°C
GS
J
V
GS= 7 &,10V
6.5V
TJ = -55°C
6V
TJ = 25°C
60
5.5V
5V
40
TJ = 150°C
10
0
20
0
TJ = 125°C
0
5
10
15
20
25
0
0
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1, Output Characteristics
Figure 2, Output Characteristics
2.5
2.0
1.5
1.0
120
100
80
60
40
20
0
NORMALIZED TO
= 10V 18A
VDS> ID(ON)
x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
@
GS
TJ = -55°C
TJ = 25°C
TJ = 125°C
0.5
0
-55 -25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
T , JUNCTION TEMPERATURE (°C)
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3, R
vs Junction Temperature
Figure 4, Transfer Characteristics
DS(ON)
10,000
1000
45
40
35
30
25
20
15
10
Ciss
TJ = -55°C
TJ = 25°C
TJ = 125°C
Coss
100
10
Crss
5
0
0
5
10
15
20
25
30
35
100
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
200
300
400
500
I , DRAIN CURRENT (A)
V
D
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
120
16
14
12
10
8
I
= 18A
D
100
80
60
40
20
0
VDS = 120V
VDS = 300V
TJ = 25°C
6
VDS = 480V
TJ = 150°C
4
2
0
0
50
100
150
200
250
0
0.3
, SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.6
0.9
1.2
1.5
Q , TOTAL GATE CHARGE (nC)
V
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT37F50B_S
200
100
200
100
I
I
DM
DM
R
ds(on)
10
1
10
1
13µs
100µs
13µs
100µs
1ms
10ms
1ms
10ms
100ms
DC line
R
ds(on)
T = 150°C
J
T
C = 25°C
Scaling for Different Case & Junction
Temperatures:
100ms
DC line
T
T
= 125°C
J
I
D = ID(T = 25°C)*(T - TC)/125
=
75°C
J
C
C
0.1
0.1
1
10
100
800
1
10
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
TJ (°C)
TC (°C)
ZEXT are the external thermal
0.011
0.0906
0.138
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Dissipated Power
(Watts)
0.00635
0.0102
0.251
Figure 11, Transient Thermal Impedance Model
0.25
0.20
0.15
0.10
D = 0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
= Pulse Duration
t
1
0.05
0
1
t
/
2
Duty Factor D =
Peak T = P
SINGLE PULSE
0.1
x Z
+ T
θJC C
J
DM
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
3
D PAK Package Outline
TO-247 (B) Package Outline
e3
100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC
6.20 (.244)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.81 (.150)
4.50 (.177) Max.
3.12 (.123)
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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