APT25GN120S [MICROSEMI]
Utilizing the latest Field Stop and Trench Gate technologies; 利用最新的场站和沟槽栅技术
| 型号： | APT25GN120S |
| 厂家： | 
Microsemi |
| 描述： | Utilizing the latest Field Stop and Trench Gate technologies |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V
APT25GN120B
APT25GN120S
APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B)
D3PAK
(S)
C
E
G
G
C
E
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
C
E
G
Applications:Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
APT25GN120B(G)
UNIT
VCES
Collector-Emitter Voltage
1200
Volts
VGE
IC1
Gate-Emitter Voltage
±±0
67
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
IC2
±±
Amps
1
Pulsed Collector Current
ICM
75
Switching Safe Operating Area @ TJ = 150°C
75A @ 1200V
272
SSOA
PD
Total Power Dissipation
Watts
°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
±00
TL
Max. Lead Temp. for Soldering: 0.06±" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
Units
V(BR)CES
1200
5
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 150µA)
VGE(TH)
5.8
1.7
1.9
6.5
2.1
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Volts
1.4
VCE(ON)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
100
TBD
600
ICES
µA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
IGES
nA
RG(int)
8
Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
APT25GN120B_S(G)
DYNAMIC CHARACTERISTICS
Test Conditions
Capacitance
Characteristic
Symbol
Cies
MIN
TYP
1800
105
85
MAX
UNIT
Input Capacitance
Coes
Cres
Output Capacitance
pF
V
GE = 0V, VCE = 25V
f = 1 MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
VGEP
Qg
9.5
V
Gate Charge
±
V
GE = 15V
155
10
Total Gate Charge
VCE = 600V
IC = 25A
Qge
Qgc
Gate-Emitter Charge
nC
Gate-Collector ("Miller") Charge
85
TJ = 150°C, RG = 4.±Ω 7, VGE
=
75
SSOA
Switching Safe Operating Area
A
15V, L = 100µH,VCE = 1200V
td(on)
tr
td(off)
tf
Inductive Switching (25°C)
22
17
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
VCC = 800V
VGE = 15V
IC = 25A
ns
280
1±5
TBD
1490
2150
22
RG = 1.0Ω 7
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
TJ = +25°C
5
mJ
ns
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
VCC = 800V
17
td(off)
tf
VGE = 15V
±±5
225
IC = 25A
RG = 1.0Ω 7
TJ = +125°C
Current Fall Time
4 4
Eon1
Eon2
Eoff
TBD
2±90
±075
Turn-on Switching Energy
55
mJ
Turn-on Switching Energy (Diode)
66
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
UNIT
MIN
TYP
MAX
.46
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
°C/W
gm
R
N/A
θJC
WT
5.9
1
2
±
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method ±471.
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 2±.)
RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT25GN120B_S(G)
80
70
60
50
40
±0
20
80
15V
15V
70
12V
60
50
12V
11V
10V
11V
40
10V
±0
9V
8V
9V
20
8V
7V
10
0
10
0
7V
10
, COLLECTER-TO-EMITTER VOLTAGE (V)
0
V
5
15
0
V
5
10
15
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(T = 25°C)
FIGURE 2, Output Characteristics (T = 125°C)
J
J
16
14
12
75
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 25A
= 25°C
C
J
60
45
±0
V
V
= 240V
= 600V
CE
TJ = 125°C
CE
10
8
V
= 960V
CE
TJ = 25°C
6
TJ = -55°C
4
15
0
2
0
0
2
4
6
8
10
12
14
0
20 40 60 80 100 120 140 160 180
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
4
±.5
±
±
2.5
2
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 50A
C
I
= 50A
C
2.5
2
I
= 25A
C
I
= 25A
C
1.5
1
I
= 12.5A
1.5
C
I
= 12.5A
C
1.0
0.5
0
0.5
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
8
10
12
14
16
-50 -25
0
25
50
75 100 125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
90
1.10
80
70
60
50
40
±0
20
1.05
1.00
0.95
0.90
10
0
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT25GN120B_S(G)
±50
±00
250
200
150
100
50
±0
25
20
15
10
VGE =15V,TJ=125°C
V
= 15V
GE
VGE =15V,TJ=25°C
VCE = 800V
TJ = 25°C, or 125°C
5
0
VCE = 800V
RG = 4.±Ω
L = 100µH
R
G = 4.±Ω
L = 100µH
0
10 15 20 25 ±0 ±5 40 45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
10
20
±0
40
50
60
I
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9,Turn-On Delay Time vs Collector Current
FIGURE 10,Turn-Off Delay Time vs Collector Current
45
±00
R
G = 4.±Ω, L = 100µH, VCE = 800V
RG = 4.±Ω, L = 100µH, VCE = 800V
40
±5
±0
25
20
15
10
5
250
200
150
100
50
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
0
0
10 15 20 25 ±0 ±5 40 45 50 55
10 15 20 25 ±0 ±5 40
45 50 55
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
7000
6000
5000
4000
±000
2000
7000
6000
5000
4000
±000
2000
V
V
R
=
=
800V
+15V
V
V
R
=
=
800V
+15V
CE
GE
CE
GE
= 4.±Ω
= 4.±Ω
G
G
T
J = 125°C
T
J = 125°C
T
J = 25°C
1000
0
1000
0
T
J = 25°C
10 15 20 25 ±0 ±5 40 45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
10 15 20 25 ±0 ±5 40 45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
I
I
CE
CE
FIGURE 13,Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
14000
12000
10000
8000
7000
V
V
T
=
=
800V
+15V
V
V
R
=
=
800V
+15V
CE
GE
CE
GE
E
50A
off,
E
50A
= 125°C
= 4.±Ω
on2,
J
6000
5000
4000
±000
2000
G
E
50A
off,
E
50A
25A
on2,
6000
E
off,
4000
E
25A
E
25A
off,
on2,
E
12.5A
E
E
12.5A
12.5A
E
25A
20
off,
off,
on2,
2000
0
1000
0
E
12.5A
on2,
on2,
40
0
10
±0
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT25GN120B_S(G)
80
70
60
50
40
±0
20
4,000
Cies
1,000
500
Coes
Cres
100
50
10
0
10
0
10
20
±0
40
50
0
200 400 600 800 1000 1200 1400
V , COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.50
D = 0.9
0.40
0.7
0.±0
0.5
Note:
0.20
t
1
0.±
t
2
0.10
SINGLE PULSE
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
0.1
+ T
C
J
DM
θJC
0.05
0
10-5
10-4
10-±
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
140
100
50
Fmax = min (fmax, fmax2
)
RC MODEL
0.05
Junction
temp. (°C)
fmax1
=
t d(on) + tr + td(off) + tf
0.05±6
0.169
0.00826
0.±5±
Pdiss - Pcond
Eon2 + E off
fmax2
=
Power
(watts)
T
T
=
125°C
75°C
J
=
C
D = 50 %
V
R
TJ - T C
R θJC
= 800V
Pdiss
=
CE
= 4.±Ω
G
10
Case temperature. (°C)
5
10 15 20 25
±0 ±5 40 45
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
APT25GN120B_S(G)
Gate Voltage
10%
td(on)
APT±0DQ120
T
= 125°C
J
90%
VCE
IC
VCC
tr
Collector Current
CollectorVoltage
5%
10%
5%
A
Switching Energy
D.U.T.
Figure 22,Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
T
= 125°C
J
CollectorVoltage
td(off)
90%
tf
10%
0
Collector Current
Switching Energy
Figure 23,Turn-off Switching Waveforms and Definitions
D3PAKPackageOutline
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
e± 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05(.6±2)
1±.41 (.528)
1±.51(.5±2)
5.±1 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.±8 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.45±)
11.61 (.457)
1±.79 (.54±)
1±.99(.551)
20.80 (.819)
21.46 (.845)
±.50 (.1±8)
±.81 (.150)
0.46 (.018)
0.56 (.022)
{± Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.11±)
±.12 (.12±)
±.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.1± (.084)
1.22 (.048)
1.±2 (.052)
0.40 (.016)
0.79 (.0±1)
19.81 (.780)
20.±2 (.800)
Heat Sink (Collector)
and Leads are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关型号：
APT25GN120SE3
Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel, D3PAK, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明