APT25GP90B [ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
| 型号： | APT25GP90B |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 IGBT |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT25GP90B
900V
®
POWER MOS 7 IGBT
TO-247
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
C
E
E
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 600V, 21A
• 50 kHz operation @ 600V, 33A
• SSOA Rated
G
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT25GP90B
Collector-Emitter Voltage
Gate-Emitter Voltage
900
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
72
36
Continuous Collector Current @ TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 110°C
1
ICM
110
Pulsed Collector Current
@ TC = 150°C
SSOA
PD
Switching Safe Operating Area @ TJ = 150°C
110A @ 900V
417
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
900
3
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
4.5
3.2
2.7
6
Volts
3.9
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
250
1000
±100
ICES
µA
nA
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1
APT25GP90B
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
2100
220
40
MAX
UNIT
Input Capacitance
Cies
Coes
Cres
VGEP
Qg
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Output Capacitance
pF
V
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
7.5
110
16
Gate Charge
3
VGE = 15V
Total Gate Charge
VCE = 450V
Qge
nC
Gate-Emitter Charge
IC = 25A
Qgc
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
47
SSOA
TJ = 150°C, RG = 5Ω, VGE
=
110
A
15V, L = 100µH,VCE = 900V
td(on)
tr
td(off)
tf
13
16
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Inductive Switching (25°C)
VCC = 600V
ns
VGE = 15V
IC = 25A
55
55
RG = 5Ω
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
Turn-on Switching Energy (Diode) 5
TBD
740
370
13
TJ = +25°C
µJ
ns
6
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Inductive Switching (125°C)
VCC = 600V
16
VGE = 15V
td(off)
tf
95
IC = 25A
RG = 5Ω
Current Fall Time
95
4 4
Turn-on Switching Energy
Eon1
Eon2
Eoff
TBD
1120
750
TJ = +125°C
55
Turn-on Switching Energy (Diode)
µJ
66
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
.30
UNIT
°C/W
gm
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
N/A
5.90
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
TYPICALPERFORMANCECURVES
APT25GP90B
100
100
80
60
40
20
0
V
= 10V.
V
= 15V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60
40
T
= 125°C
T
= 125°C
C
C
T
= -50°C
T
= -50°C
C
C
T
= 25°C
C
T
= 25°C
C
20
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
,COLLECTER-TO-EMITTERVOLTAGE(V)
V
,COLLECTER-TO-EMITTERVOLTAGE(V)
CE
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
120
16
14
12
I
T
= 25A
= 25°C
250µs PULSE TEST
<0.5 % DUTY CYCLE
C
J
100
80
V
= 180V
CE
V
= 450V
CE
10
8
60
V
= 720V
CE
T
= -55°C
J
6
40
T
= 25°C
J
4
T
= 125°C
J
20
0
2
0
0
2
4
6
8
10
0
20
40
60
80
100
120
V
, GATE-TO-EMITTER VOLTAGE(V)
GATE CHARGE (nC)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
6
5
4
4
3.5
3
T
= 25°C.
J
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 25A
C
I
= 50A
= 25A
C
I
C
2.5
I
= 50A
C
2
1.5
1
3
2
I
= 12.5A
C
I
= 12.5A
C
1
0
V
= 15V.
GE
0.5
0
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
25
50
75
100
125
V
,GATE-TO-EMITTERVOLTAGE(V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE6,OnStateVoltagevsJunctionTemperature
1.10
100
80
60
40
1.05
1.00
0.95
0.90
20
0
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE7,BreakdownVoltage vs.JunctionTemperature
FIGURE8,DCCollectorCurrentvsCaseTemperature
APT25GP90B
18
16
14
12
10
8
100
80
VGE =15V,TJ=125°C
V
= 15V
GE
60
VGE =15V,TJ=25°C
40
6
4
VCE =600V
J = 25°C, TJ =125°C
RG = 5Ω
L = 100 µH
20
0
VCE=600V
RG = 5Ω
L = 100 µH
T
2
0
10
20
30
40
50
60
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT(A)
I
, COLLECTOR TO EMITTER CURRENT(A)
CE
CE
FIGURE9, Turn-OnDelayTimevsCollectorCurrent
FIGURE10, Turn-OffDelayTimevsCollectorCurrent
50
120
R
G = 5Ω, L = 100µH, VCE = 600V
RG = 5Ω, L = 100µH, VCE = 600V
100
80
40
30
20
T = 125°C, VGE = 15V
J
60
T = 25°C, VGE = 15V
J
40
T = 25 or 125°C,VGE =15V
J
10
0
20
0
10
I
20
30
40
50
60
10
I
20
30
40
50
60
, COLLECTOR TO EMITTER CURRENT(A)
FIGURE 11, Current Rise Time vs Collector Current
, COLLECTOR TO EMITTER CURRENT(A)
CE
CE
FIGURE 12, Current Fall Time vs Collector Current
3000
2500
2000
1500
1000
2500
2000
1500
1000
V
V
=
=
600V
+15V
V
V
R
=
=
= 5 Ω
600V
+15V
CE
GE
CE
GE
R
= 5 Ω
G
G
T = 125°C,VGE=15V
J
T = 125°C, VGE = 15V
J
500
0
500
0
T = 25°C, VGE = 15V
J
T = 25°C,VGE=15V
J
10
20
30
40
50
60
10
20
30
40
50
60
I
,COLLECTORTOEMITTERCURRENT(A)
I
,COLLECTORTOEMITTERCURRENT(A)
CE
CE
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3000
V
V
R
=
=
= 5 Ω
600V
+15V
V
V
T
=
=
600V
+15V
CE
GE
CE
GE
E
50A
on2,
= 125°C
3500
3000
2500
2000
1500
1000
G
J
2500
2000
1500
1000
E
50A
on2,
E
50A
off,
E
50A
off,
E
25A
on2,
E
25A
on2,
E
12.5A
E
25A
on2,
off,
500
0
E
25A
off,
E
12.5A
500
0
on2,
E
12.5A
30
E
12.5A
off,
off,
0
10
20
40
50
0
25
50
75
100
125
R ,GATE RESISTANCE(OHMS)
T ,JUNCTIONTEMPERATURE(°C)
G
J
FIGURE 15, Switching EnergyLosses vs. GateResistance
FIGURE16,SwitchingEnergyLosses vsJunctionTemperature
TYPICALPERFORMANCECURVES
APT25GP90B
120
100
80
5,000
C
ies
1,000
500
60
C
oes
100
50
40
C
res
20
0
10
0
10
20
30
40
50
0
200
400
600
800
1000
V
,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
V
,COLLECTORTOEMITTERVOLTAGE
CE
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0.35
0.30
0.9
0.25
0.7
0.20
0.5
Note:
0.15
t
1
0.3
0.10
0.05
0
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
SINGLEPULSE
10-3
0.1
+ T
J
DM θJC
C
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
RC MODEL
270
Junction
temp (°C)
0.131
0.168
0.00852F
0.154F
Power
(watts)
100
50
Fmax = min(fmax1,fmax 2
)
0.05
fmax1
=
Case temperature(°C)
td(on) + tr + td(off ) + tf
P
− Pcond
diss
fmax 2
=
FIGURE19b, TRANSIENT THERMALIMPEDANCE MODEL
T
T
=
125°C
75°C
J
Eon2 + Eoff
=
C
D = 50 %
T − TC
J
V
R
= 600V
P
=
CE
diss
= 5 Ω
RθJC
G
10
5
15
25
35
45
55
65
75
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
APT25GP90B
GateVoltage
APT15DF100
10%
td(on)
T
= 125°C
J
DrainCurrent
tr
VCE
IC
VCC
90%
5%
5%
10%
DrainVoltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure22,Turn-onSwitchingWaveformsandDefinitions
VTEST
*DRIVER SAME TYPE AS D.U.T.
90%
GateVoltage
T
= 125°C
J
A
td(off)
VCE
DrainVoltage
90%
IC
100uH
tf
VCLAMP
B
10%
0
DrainCurrent
A
Switching Energy
D.U.T.
DRIVER*
Figure23,Turn-offSwitchingWaveformsandDefinitions
Figure 24, E
Test Circuit
ON1
T0-247PackageOutline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87(.113)
4.50 (.177) Max.
3.12 (.123)
1.65 (.065)
0.40 (.016)
0.79 (.031)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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