APT25GP120BDF1 [MICROSEMI]
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel;
| 型号： | APT25GP120BDF1 |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总9页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT25GP120BDF1
1200V
®
POWER MOS 7 IGBT
AnewgenerationofhighvoltagepowerIGBTs. Usingpunch-throughtechnology
and a proprietary metal gate, this IGBT has been optimized for very fast
switching, making it ideal for high frequency, high voltage switch-mode power
supplies and tail current sensitive applications. In many cases, the POWER
MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
TO-247
G
C
E
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 800V, 11A
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
C
E
• Ultrafast Tail Current shutoff
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT25GP120BDF1
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
69
33
90
Continuous Collector Current @ TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 110°C
1
ICM
Pulsed Collector Current
@ TC = 150°C
RBSOA
PD
Reverse Bias Safe Operating Area @ TJ = 150°C
90A @ 960V
417
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1200
3
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
4.5
3.3
3.0
6
Volts
3.9
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
500
3000
±100
µA
nA
ICES
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT25GP120BDF1
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
2090
200
40
MAX
UNIT
Input Capacitance
Cies
Coes
Cres
VGEP
Qg
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Output Capacitance
pF
V
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
7.5
110
15
Gate Charge
3
VGE = 15V
Total Gate Charge
VCE = 600V
Qge
Qgc
nC
Gate-Emitter Charge
IC = 25A
Gate-Collector ("Miller") Charge
50
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, RG = 5Ω, VGE
=
90
A
15V, L = 100µH,VCE = 960V
td(on)
12
14
Turn-on Delay Time
Inductive Switching (25°C)
VCLAMP(Peak) = 600V
tr
Current Rise Time
ns
VGE = 15V
td(off)
tf
70
Turn-off Delay Time
Current Fall Time
IC = 25A
39
RG = 5Ω
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
Turn-on Switching Energy (Diode) 5
500
1090
440
12
TJ = +25°C
µJ
ns
6
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Inductive Switching (125°C)
VCLAMP(Peak) = 600V
14
VGE = 15V
td(off)
tf
110
90
IC = 25A
RG = 5Ω
Current Fall Time
4
Turn-on Switching Energy
Eon1
Eon2
Eoff
500
1575
1185
TJ = +125°C
Turn-on Switching Energy (Diode) 5
µJ
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
.30
UNIT
°C/W
gm
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
1.18
5.90
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
TYPICAL PERFORMANCE CURVES
APT25GP120BDF1
60
60
50
40
30
20
10
0
V
= 10V.
V
= 15V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
30
20
T =25°C
C
T =125°C
C
T =125°C
C
T =25°C
10
0
C
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
100
16
14
12
10
8
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
T
= 25A
= 25°C
C
V
= 240V
J
CE
80
60
V
= 600V
CE
T
= -55°C
J
V
= 960V
CE
T
= 125°C
J
40
20
0
6
T
= 25°C
J
4
2
0
0
1
2
3
4
5
6
7
8
9
10
0
20
40
GATE CHARGE (nC)
FIGURE 4, Gate Charge
60
80
100
120
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
5
4.5
4
5
4.5
4
I
50A
C=
I
50A
C=
I
25A
3.5
3
3.5
3
C=
I
25A
C=
I
12.5A
C=
2.5
2
2.5
2
I
12.5A
C=
1.5
1
1.5
1
T
= 25°C.
V
= 15V.
J
GE
0.5
0
0.5
0
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
-25
0
25
50
75
100
125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
100
90
80
70
1.15
1.10
1.05
1.0
60
50
40
30
20
10
0
0.95
0.90
0.85
0.8
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT25GP120BDF1
25
20
15
10
5
140
VCE=600V
G = 5Ω
L = 100 µH
R
VGE =15V,TJ=125°C
120
100
80
V
= 10V
GE
V
= 15V
GE
VGE =15V,TJ=25°C
VGE =10V,TJ=125°C
VGE =10V,TJ=25°C
60
40
V
CE = 600V
TJ = 25°C, TJ =125°C
RG = 5Ω
L = 100 µH
20
0
I
0
I
10 15
20 25 30 35 40 45 50
10 15 20 25 30 35 40 45 50
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
100
RG = 5Ω, L = 100µH, VCE = 600V
RG = 5Ω, L = 100µH, VCE = 600V
100
80
80
60
40
20
TJ = 25° or 125°C,VGE = 10V
T
J = 125°C, VGE = 10V or 15V
60
40
T
J = 25°C, VGE = 10V or 15V
20
TJ = 25° or 125°C,VGE =15V
0
I
0
I
10 15
20
25
30
35
40
45
50
10
CE
20
30
40
50
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
2500
2000
1500
1000
3000
2500
2000
1500
1000
V
V
R
=
=
= 5 Ω
600V
+15V
V
V
=
=
600V
+15V
CE
GE
CE
GE
R
= 5 Ω
G
T
G
J = 25°C,VGE =10V
T
J = 125°C, VGE = 10V or 15V
T
J = 125°C,VGE =10V
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
500
0
500
0
T
J = 25°C, VGE = 10V or 15V
10 15
20
25 30
35
40 45 50
10 15
20
25
30
35
40
45 50
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
4500
3500
V
V
=
=
600V
+15V
V
V
=
=
600V
+15V
CE
GE
CE
GE
E
50A
E
50A
on2,
on2,
4000
3500
3000
2500
2000
1500
1000
500
R
= 5 Ω
R
= 5 Ω
G
G
3000
2500
2000
1500
1000
500
E
50A
off,
E
E
25A
on2,
E
25A
on2,
E
50A
off,
25A
off,
E
25A
off,
E
12.5A
on2,
E
12.5A
on2,
E
12.5A
off,
E
12.5A
off,
0
0
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT25GP120BDF1
100
90
80
70
60
50
40
10,000
5,000
C
ies
1,000
500
C
oes
100
C
res
20
0
10
0
10
20
30
40
50
0
V
200
400
600
800
1000
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR TO EMITTER VOLTAGE
CE
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0.35
0.30
0.9
0.25
0.7
0.20
Note:
0.5
0.15
t
1
0.3
0.10
0.05
0
t
2
t
1
Duty Factor D =
/
t
2
Peak T = P
x Z + T
θJC C
0.1
J
DM
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
182
100
RC MODEL
Junction
temp (°C)
Fmax = min(fmax1,fmax 2
)
50
0.128
0.173
0.00833F
0.171F
0.05
Power
(watts)
fmax1
=
td(on) + tr + td(off ) + tf
P
− P
diss
cond
fmax 2
=
T
T
= 125°C
= 75°C
J
Eon2 + Eoff
C
Case temperature(°C)
D = 50 %
V
T − TC
RθJC
J
= 800V
CE
P
=
diss
R
= 5 Ω
G
10
FIGURE19B, TRANSIENT THERMALIMPEDANCE MODEL
5
10 15 20 25 30 35 40 45 50
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector
Current
APT25GP120BDF1
Gate Voltage
APT15DF120
10%
TJ = 125 C
td(on)
VCE
IC
VCC
tr
90%
10%
Collector Current
Collector Voltage
A
5 %
5%
D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
Gate Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125
C
A
td(off)
tf
Collector Voltage
VCE
IC
100uH
90%
0
VCLAMP
B
10%
Collector Current
A
Switching Energy
D.U.T.
DRIVER*
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, E
ON1
Test Circuit
TYPICAL PERFORMANCE CURVES
APT25GP120BDF1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUMRATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Characteristic / Test Conditions
APT25GP120BDF1
Symbol
IF(AV)
UNIT
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
15
22
IF(RMS)
Amps
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
110
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IF = 25A
3.70
4.65
2.97
VF
Forward Voltage
IF = 50A
Volts
IF = 25A, TJ = 125°C
DYNAMICCHARACTERISTICS
Characteristic
Symbol
TestConditions
MIN
TYP
MAX
UNIT
trr
trr
Reverse Recovery Time
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
36
ns
Reverse Recovery Time
-
280
IF = 15A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
Qrr
IRRM
trr
Reverse Recovery Charge
nC
Amps
ns
-
-
-
-
-
-
-
-
270
3
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
390
1000
6
IF = 15A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Qrr
IRRM
trr
Reverse Recovery Charge
nC
Amps
ns
Maximum Reverse Recovery Current
Reverse Recovery Time
150
1500
20
IF = 15A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Qrr
IRRM
Reverse Recovery Charge
nC
Maximum Reverse Recovery Current
Amps
1.20
0.9
0.7
1.00
0.80
0.60
0.40
0.5
0.3
Note:
t
1
t
2
0.20
0
t
SINGLEPULSE
1
/
t
0.1
Duty Factor D =
Peak T = P x Z
2
+ T
0.05
J
DM θJC
C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE25a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
RC MODEL
Junction
temp(°C)
0.676 °C/W
0.504 °C/W
0.00147 J/°C
0.0440 J/°C
Power
(watts)
Case temperature(°C)
FIGURE25b,TRANSIENT THERMAL IMPEDANCE MODEL
APT25GP120BDF1
100
90
80
70
60
50
40
30
20
10
0
500
400
300
200
100
0
T
= 125°C
= 800V
J
V
R
30A
T = 150°C
J
T = 125°C
J
15A
7.5A
T = 25°C
J
T = -55°C
J
0
1
2
3
4
5
6
7
0
200
400
600
800
1000 1200
V ,ANODE-TO-CATHODEVOLTAGE(V)
-di /dt, CURRENT RATE OF CHANGE(A/µs)
F
F
Figure 26. Forward Current vs. Forward Voltage
Figure 27. Reverse Recovery Time vs. Current Rate of Change
2500
2000
1500
1000
25
T
V
= 125°C
= 800V
T
V
= 125°C
= 800V
J
J
R
R
30A
20
15
10
5
30A
15A
15A
7.5A
7.5A
500
0
0
0
200
400
600
800
1000 1200
0
200
400
600
800
1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt,CURRENTRATEOFCHANGE(A/µs)
F
F
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure29. ReverseRecoveryCurrentvs. CurrentRateofChange
1.2
25
Duty cycle
= 0.5
Q
rr
t
T
= 150°C
rr
J
1.0
0.8
0.6
0.4
20
15
10
I
RRM
t
rr
Q
rr
5
0
0.2
0.0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature
100
125
150
T ,JUNCTIONTEMPERATURE(°C)
J
Figure 30. Dynamic Parameters vs. Junction Temperature
100
80
60
40
20
0
1
10
V , REVERSEVOLTAGE(V)
100 200
R
Figure 32. Junction Capacitance vs. Reverse Voltage
APT25GP120BDF1
V
r
diF/dt Adjust
+18V
0V
APT10035LLL
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 33. Diode Test Circuit
1
2
IF - Forward Conduction Current
diF/dt - Rate of Diode Current Change Through Zero Crossing.
1
4
5
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
R
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 34, Diode Reverse Recovery Waveform and Definitions
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
Collector
(Cathode)
1.01 (.040)
1.40 (.055)
Emitter
(Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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