APT25GP120B2D1 [MICROSEMI]
36A, 1200V, N-CHANNEL IGBT, TMAX-3;
| 型号： | APT25GP120B2D1 |
| 厂家： | 
Microsemi |
| 描述： | 36A, 1200V, N-CHANNEL IGBT, TMAX-3 双极性晶体管 功率控制 |
| 文件： | 总2页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Profile
Advanced Power Technology
New Power MOS 7® IGBTs for SMPS Applications
600 Volt Size 6 - APT40GP60B2D1
Product Description
IGBT products offered by APT utilize both NPT and PT technologies to cover
the widest range of applications and design requirements. They can be used as
a cost effective alternative to MOSFETs in many applications with high efficiency,
improved power density, and lower cost. Recently, APT has announced a new
generation of 600 and 1200 volt PT-Type IGBTs utilizing its advanced proprietary
Power MOS 7® Technology. The 600 volt IGBTs are designed to replace 500 and
600 volt MOSFETs and the 1200 volt IGBTs are designed to replace 1000 and
1200 volt MOSFETs in switch mode power supply (SMPS), power factor correc-
tion (PFC), and other high-power applications. The gate-drive voltage require-
ment is similar to a MOSFET. This allows larger die size power MOSFETs, or
multiple MOSFETs in parallel to be replaced with just one power MOS 7® IGBT.
This new generation technology enables operation up to 150 kHz without current
de-rating. Products range from approximately 10 to 100 amps in TO-220, TO-
TJ=125OC
TC=75OC
D=50%
VCE=400V
RG=5W
I
C Collector Current (A)
ä
ä
247, T-MAX , TO-264, 264 MAX , and Isotop® packages.
1200 Volt Size 6 - APT35GP120B2D2
Higher Threshold Voltage and Re-
duced Miller Capacitance - this pro-
vides for increased noise and spurious
turn-on immunity and eliminates the
need for a negative gate voltage for
turn-off. This eliminates the need for an
auxiliary power supply and simplifies the
use of gate driver ICs.
TJ=125OC
TC=75OC
D=50%
Low Forward Voltage - conduction
losses are dramatically lower, especially
at high temperatures.
VCE=800V
RG=5W
Low Gate Charge this reduces gate
drive power losses and enables fast
switching.
I
C Collector Current (A)
Hermetic and Hi-Rel
Features and Benefits
Low Thermal Resistance maximiz-
ing power dissipation capabilities.
APT is ISO9001 registered, MIL-PRF-
19500 certified, and can offer TX, TXV,
and space level processing. Custom test-
ing and screening as well as plastic up-
screening is also available.
Metal Gate - these IGBTs utilize a pro-
prietary planar stripe metal gate design
providing internal chip gate resistance one
to two orders of magnitude lower than
comparable industry standard polysilicon
gate devices. This enables very uniform
and fast switching across the entire chip
with uniform heat distribution. The metal
gate minimizes chip gate resistance varia-
tion from batch to batch providing the user
with more consistent switching perfor-
mance. In addition, the low chip gate re-
sistance allows the designer maximum
range of switching speed and increases
the immunity to dv/dt induced turn-on.
Combis - Power MOS 7® IGBTs are
available co-packaged with a fast-recov-
ery, antiparallel diode optimized for low
reverse recovery charge, further en-
hancing performance in power switch-
ing applications. Co-packaging the
Power MOS 7® IGBTs with these rectifi-
ers reduces EMI, switching losses, and
conduction losses, while reducing com-
ponent count and cost.
Power Modules
Products cover a wide range of power
and complexity.
Low Switching Energies this enables
very low inductive switching losses. In
combination with the low conduction
losses and the low thermal resistance,
new levels of high frequency capability
for a given current is achieved.
Die Products - are available.
Lower Cost
Alternative
to MOSFETS
www.advancedpower.com
Nasdaq: APTI
Data sheets now include a graph of fre-
quency vs. current for an IGBT Combi.
This graph comprehends both conduc-
tion and switching losses and allows the
designer to properly select the best de-
vice for the application. Examples are
shown in the following graphs:
High Current Density the IGBT ad-
vantage in current density over MOSFETs
facilitates higher output power, provides
for smaller and lower cost components,
and allows for smaller and higher power
density designs. The die size for the IGBT
is often 1 or 2 die sizes smaller than a
MOSFET solution.
Switching Power (541) 382-8028 USA
Power Modules
RF Power
33 337 92 1515 France
(408) 986-8031 USA
Advanced Power Technology
Insulated Gate Bipolar Transistors (IGBTs)
VCE(ON)
(25OC)
IC2
R
Part
Number
Package
Style
qJC
Volt
110OC
(OC/watt)
Single
TO-220
1200
600
3.9
2.7
21
30
0.43
0.43
APT13GP120K
APT15GP60K
TO-220
TO-220
TO-220[K]
1200
3.9
3.9
3.9
3.9
2.7
2.7
2.7
2.7
21
36
46
54
30
49
62
70
0.43
0.27
0.23
0.20
0.43
0.27
0.23
0.20
APT13GP120B
APT25GP120B
APT35GP120B
APT45GP120B
APT15GP60B
APT30GP60B
APT40GP60B
APT50GP60B
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
600
TO-247
1200
600
3.9
2.7
2.7
61
96
100
0.12
0.15
0.12
APT75GP120B2
APT65GP60B2
APT80GP60B2
T-MAXTM
T-MAXTM
T-MAXTM
TO-247[B]
1200
600
3.9
3.9
3.9
2.7
2.7
2.7
2.7
29
34
41
40
46
60
68
0.44
0.38
0.23
0.44
0.38
0.29
0.27
APT35GP120J
APT45GP120J
APT75GP120J
APT40GP60J
APT50GP60J
APT65GP60J
APT80GP60J
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
T-Max
Combi (IGBT & FRED)
T-MAX[B2]
1200
600
3.9
2.7
2.7
21
30
49
0.43
0.43
0.27
APT13GP120BD1
APT15GP60BD1
APT30GP60BD1
TO-247
TO-247
TO-247
TO-264
Max
1200
600
3.9
3.9
3.9
2.7
2.7
36
46
54
62
72
0.27
0.23
0.23
0.23
0.20
APT25GP120B2D1
APT35GP120B2D2
APT45GP120B2D2
APT40GP60B2D1
APT50GP60B2D2
T-MAXTM
T-MAXTM
T-MAXTM
T-MAXTM
T-MAXTM
264 MAX [L2]
600
2.7
96
0.15
APT65GP60L2D2
264-MAXTM
1200
3.9
3.9
3.9
2.7
2.7
2.7
2.7
2.7
29
34
41
31
40
46
60
68
0.44
0.44
0.23
0.51
0.44
0.38
0.29
0.27
APT35GP120JD2
APT45GP120JD2
APT75GP120JD2
APT30GP60JD1
APT40GP60JD1
APT50GP60JD2
APT65GP60JD2
APT80GP60JD3
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
ISOTOP®
E
E
C
600
G
SOT-227
ISOTOP®[J]
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