2N3767 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | 2N3767 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 518
Devices
Qualified Level
JAN
2N3766
2N3767
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3766 2N3767 Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
60
80
Vdc
Vdc
Vdc
Adc
Adc
W
VCEO
VCBO
VEBO
IB
80
100
6.0
2.0
4.0
25
Collector Current
IC
Total Power Dissipation
@ TC = +250C (1)
PT
-65 to +200
0C
Operating & Storage Temperature Range
Top, T
stg
TO-66*
(TO-213AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C
7.0
R
qJC
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Symbol
Min.
Max.
Unit
Vdc
60
80
2N3766
2N3767
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
VCE = 100 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 80 Vdc
500
500
2N3766
2N3767
ICEO
mAdc
mAdc
10
10
2N3766
2N3767
ICEX
10
10
2N3766
2N3767
ICBO
mAdc
mAdc
VCB = 100 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
500
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3766, 2N3767 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 500 mAdc, VCE = 5.0 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 0.5 Adc, IB = 0.05 Adc
Base-Emitter Voltage
IC = 1.0 Adc, VCE = 10 Vdc
30
40
20
hFE
160
2.5
1.0
Vdc
Vdc
VCE(sat)
1.5
VBE(on)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
8.0
50
½hfe½
1.0
pF
Cobo
VCB = 10 Vdc, IE = 0, 0.1 MHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc
Turn-Off Time
ton
ms
ms
0.25
2.5
toff
VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.25 Vdc, IC = 4.0 Adc
Test 2
VCE = 20 Vdc, IC = 1.25 Adc
Test 3
VCE = 50 Vdc, IC = 150 mAdc
VCE = 65 Vdc, IC = 150 mAdc
2N3766
2N3767
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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