2N3767_10 [SEME-LAB]
SILICON NPN TRANSISTOR; 硅NPN晶体管
| 型号： | 2N3767_10 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON NPN TRANSISTOR
2N3767
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Low Saturation Voltage
High Gain Characteristics
Hermetic TO66 Metal Package
High Reliability Screening Options Available
Switching and Medium Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
100V
CBO
CEO
EBO
80V
6.0V
4.0A
C
I
2.0A
B
P
T = 25°C
C
Total Power Dissipation at
25W
T
De-rate Above T = 25°C
C
143mW/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols Parameters
Min. Typ. Max. Unit
R
Thermal Resistance, Junction To Case
7.0
°C/W
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9157
Issue 1
Website: http://www.semelab-tt.com
Page 1 of 2
SILICON NPN TRANSISTOR
2N3767
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Symbols Parameters
Test Conditions
Min. Typ. Max. Unit
(1)
Collector-Emitter
Breakdown Voltage
Collector-Emitter Cut off
Current
V
I
= 100mA
= 80V
I = 0
B
80
V
(BR)CEO
C
I
V
500
CEO
CE
µA
I
I
I
V
V
V
= 6.0V
= 100V
= 70V
I = 0
C
Emitter-Base Cut-Off Current
500
10
EBO
EB
CE
CE
V
V
T
= -1.5V
BE
BE
Collector-Emitter Cut-Off
Current
= -1.5V
CEX
1.0
mA
= 150°C
A
V
V
I
= 100V
= 10V
I = 0
E
Collector-Base Cut-Off Current
Base-Emitter Voltage
10
µA
CBO
CB
CE
(1)
V
I = 1.0A
C
1.5
V
BE
= 50mA
V
V
T
= 5V
= 5V
30
40
13
20
C
CE
CE
I
= 500mA
160
C
(1)
h
DC Current Gain
FE
= -55°C
= 10V
A
I
I
I
= 1.0A
V
C
C
C
CE
= 500mA
= 1.0A
I = 50mA
B
1.0
2.5
(1)
Collector-Emitter
Saturation Voltage
V
CE(sat)
I = 100mA
B
V
(1)
Base-Emitter
Saturation Voltage
V
I
= 1.0A
I = 100mA
B
1.5
BE(sat)
C
DYNAMIC CHARACTERISTICS
I
= 500mA
V
= 10V
C
CE
Magnitude of Small-Signal
Short-Circuit Current Gain
|h |
1.0
8.0
50
fe
f = 10MHz
= 10V
V
I = 0
E
CB
f = 1.0MHz
C
t
Output Capacitance
pF
obo
V
I
= 30V
I
I
= 500mA
Turn On Time
Turn Off Time
0.25
2.5
on
CC
= 50mA
C
µs
t
= - I
B1
off
B1
B2
6.35 (0.250)
8.64 (0.340)
Notes
3.68
(0.145) rad.
max.
(1) Pulse Width ≤ 300us, δ ≤ 2%
3.61 (0.142)
4.08(0.161)
rad.
MECHANICAL DATA
Dimensions in mm (inches)
1
2
TO66 (TO-213AA) METAL PACKAGE
Underside View
1.27 (0.050)
1.91 (0.750)
4.83 (0.190)
5.33 (0.210)
PIN 1 - Base
PIN 2 - Emitter
Case - Collector
9.14 (0.360)
min.
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9157
Issue 1
Website: http://www.semelab-tt.com
Page 2 of 2
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