2N3771 [ONSEMI]
POWER TRANSISTORS (NPN SILICON); 功率晶体管（ NPN硅）
| 型号： | 2N3771 |
| 厂家： | 
ONSEMI |
| 描述： | POWER TRANSISTORS (NPN SILICON) |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 2N3771/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
. . . designed for linear amplifiers, series pass regulators, and inductive switching
applications.
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
•
Forward Biased Second Breakdown Current Capability
I
I
= 3.75 Adc @ V
= 40 Vdc — 2N3771
= 60 Vdc — 2N3772
40 and 60 VOLTS
150 WATTS
S/b
S/b
CE
= 2.5 Adc @ V
CE
*MAXIMUM RATINGS
Rating
Symbol
2N3771
40
2N3772
60
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CEX
50
80
CASE 1–07
TO–204AA
(TO–3)
V
CB
50
100
7.0
V
EB
5.0
Collector Current — Continuous
Peak
I
C
30
30
20
30
Base Current — Continuous
Peak
I
B
7.5
15
5.0
15
Adc
Total Device Dissipation @ T = 25 C
C
Derate above 25 C
P
D
150
0.855
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +200
C
J
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N3771, 2N3772
Unit
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
θ
1.17
C/W
JC
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
C)
175
200
T
, CASE TEMPERATURE (
°
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
*Collector–Emitter Sustaining Voltage (1)
2N3771
2N3772
V
40
60
—
—
Vdc
Vdc
CEO(sus)
(I = 0.2 Adc, I = 0)
C
B
Collector–Emitter Sustaining Voltage
(I = 0.2 Adc, V = 1.5 Vdc, R
2N3771
2N3772
V
50
80
—
—
CEX(sus)
CER(sus)
= 100 Ohms)
C
EB(off) BE
Collector–Emitter Sustaining Voltage
(I = 0.2 Adc, R = 100 Ohms)
2N3771
2N3772
V
45
70
—
—
Vdc
C
BE
*Collector Cutoff Current
I
mAdc
CEO
(V
CE
(V
CE
(V
CE
= 30 Vdc, I = 0)
2N3771
2N3772
—
—
10
10
B
= 50 Vdc, I = 0)
B
= 25 Vdc, I = 0)
B
*Collector Cutoff Current
I
mAdc
CEV
(V
CE
(V
CE
(V
CE
(V
CE
= 50 Vdc, V
= 100 Vdc, V
EB(off)
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc)
2N3771
2N3772
2N6257
2N3771
2N3772
—
—
—
—
—
2.0
5.0
4.0
10
EB(off)
= 45 Vdc, V
= 30 Vdc, V
EB(off)
EB(off)
= 1.5 Vdc, T = 150 C)
C
10
(V
CE
= 45 Vdc, V
= 1.5 Vdc, T = 150 C)
EB(off) C
*Collector Cutoff Current
I
mAdc
mAdc
CBO
(V
CB
(V
CB
= 50 Vdc, I = 0)
2N3771
2N3772
—
—
2.0
5.0
E
= 100 Vdc, I = 0)
E
*Emitter Cutoff Current
I
EBO
(V
BE
(V
BE
= 5.0 Vdc, I = 0)
2N3771
2N3772
—
—
5.0
5.0
C
= 7.0 Vdc, I = 0)
C
*ON CHARACTERISTICS
DC Current Gain (1)
h
FE
—
(I = 15 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
= 4.0 Vdc)
= 4.0 Vdc)
= 4.0 Vdc)
2N3771
2N3772
15
15
60
60
C
CE
CE
(I = 10 Adc, V
C
(I = 8.0 Adc, V
C
CE
CE
CE
(I = 30 Adc, V
2N3771
2N3772
C
5.0
5.0
—
—
(I = 20 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 15 Adc, I = 1.5 Adc)
V
Vdc
Vdc
CE(sat)
2N3771
2N3772
2N3771
2N3772
—
—
—
—
2.0
1.4
4.0
4.0
C
B
(I = 10 Adc, I = 1.0 Adc)
C
C
B
B
B
(I = 30 Adc, I = 6.0 Adc)
(I = 20 Adc, I = 4.0 Adc)
C
Base–Emitter On Voltage
V
BE(on)
(I = 15 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
= 4.0 Vdc)
2N3771
2N3772
—
—
2.7
2.2
C
CE
CE
CE
(I = 10 Adc, V
C
(I = 8.0 Adc, V
C
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
0.2
40
—
—
MHz
—
T
(I = 1.0 Adc, V
C CE
= 4.0 Vdc, f = 50 kHz)
test
Small–Signal Current Gain
(I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz)
h
fe
C
CE
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non–repetitive)
I
Adc
S/b
(V
CE
(V
CE
= 40 Vdc)
= 60 Vdc)
2N3771
2N3772
3.75
2.5
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: 300 µs, Rep. Rate 60 cps.
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
0.1
0.07
(pk)
0.05
θ
θ
(t) = r(t) θ
JC
JC
JC
= 0.875°C/W MAX
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.2
t
0.03
0.02
1
0.01
1
t
2
SINGLE PULSE
T
– T = P
θ
(t)
J(pk)
C
(pk) JC
DUTY CYCLE, D = t /t
1 2
0.01
0.02
0.05
0.1
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
2000
t, TIME (ms)
Figure 2. Thermal Response — 2N3771, 2N3772
40
30
20
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
40
µ
s
2N3771
2N3772, (dc)
down. Safe operating area curves indicate I – V
limits of
C
CE
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
100
200
µ
s
dc
µ
s
10
7.0
5.0
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
T
= 25°C
C
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
1.0 ms
100 ms
provided T
J(pk)
< 200 C. T may be calculated from the
J(pk)
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, T will be found to be less than T
J(pk)
J(max)
CEO
for pulse widths of 1 ms and less. When using Motorola
transistors, it is permissible to increase the pulse power limits
3.0
2.0
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
20 30
until limited by T
.
J(max)
1.0
2.0 3.0
5.0 7.0 10
50 70 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 3. Active–Region Safe Operating Area
— 2N3771, 2N3772
V
CC
10
+30 V
V
= 30
/I = 10
CC
5.0
2.0
1.0
0.5
I
C B
= 25°C
V
= 5.0 V
BE(off)
25 µs
R
T
C
J
+11 V
0
SCOPE
R
B
t
r
D
51
1
0.2
0.1
–9.0 V
10 ns
DUTY CYCLE = 1.0%
–4 V
t , t
≤
r
f
t
0.05
d
R
AND R ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
0.02
0.01
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
≈
100 mA
100 mA
0.3 0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
B
≈
B
I
, COLLECTOR CURRENT (AMP)
C
Figure 4. Switching Time Test Circuit
Figure 5. Turn–On Time
3
Motorola Bipolar Power Transistor Device Data
2000
100
50
T
= 25°C
J
V
= 30 V
/I = 10
CC
I
I
T
C B
= I
20
10
B1 B2
C
C
= 25°C
ib
1000
700
J
5.0
ob
t
s
2.0
1.0
0.5
500
t
f
300
200
0.2
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.3
0.5
1.0
2.0
3.0
5.0 7.0 10
20
30
V
, REVERSE VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (AMP)
R
C
Figure 7. Capacitance
Figure 6. Turn–Off Time
500
2.0
1.6
1.2
0.8
T
= 25°C
J
300
200
T = 150°C
J
V
= 4.0 V
CE
I
= 2.0 A
5.0 A
10 A
20 A
25°C
C
100
70
50
–55°C
30
20
0.4
10
7.0
5.0
0
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
0.01 0.02
0.05
I
0.1
0.2
0.5
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
C
C
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
5
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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2N3771/D
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