2N3767LEADFREE [CENTRAL]
暂无描述;
| 型号： | 2N3767LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
2N3766
2N3767
Semiconductor Corp.
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types
are silicon NPN power transistors manufactured by the
epitaxial base process designed for power amplifier and
medium speed switching applications.
MARKING CODE: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
2N3766
80
2N3767
100
UNITS
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
CBO
CEO
EBO
60
80
6.0
4.0
2.0
25
V
I
A
C
Base Current
I
A
B
Power Dissipation
P
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
-65 to +200
7.0
°C
°C/W
J
Θ
JC
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
10
10
UNITS
μA
μA
μA
μA
V
I
I
I
I
V
V
V
V
=Rated V
=Rated V
=Rated V
=6.0V
, V =1.5V
CEV
CBO
CEO
EBO
CE
CB
CE
EB
CBO BE
CBO
CEO
500
500
BV
I =100mA (2N3766)
60
80
CEO
CEO
C
BV
I =100mA (2N3767)
V
C
V
V
V
I =500mA, I =50mA
1.0
2.5
1.5
V
CE(SAT)
CE(SAT)
BE(ON)
FE
C
B
I =1.0A, I =100mA
V
C
B
V
=10V, I =1.0A
V
CE
CE
CE
CE
CE
CB
C
h
h
h
V
V
V
V
V
=5.0V, I =50mA
30
40
20
10
C
=5.0V, I =500mA
160
50
FE
C
=10V, I =1.0A
FE
C
f
=10V, I =500mA, f=10MHz
MHz
pF
T
C
C
=10V, I =0, f=100KHz
C
ob
R1 (25-October 2007))
2N3766
2N3767
TM
Central
Semiconductor Corp.
NPN SILICON
POWER TRANSISTOR
TO-66 CASE - MECHANICAL OUTLINE
MARKING CODE: FULL PART NUMBER
R1 (25-October 2007))
相关型号：
2N3767SMD
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
SEME-LAB
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