2N3767SMD05 [SEME-LAB]
NPN BIPOLAR TRANSISTOR; NPN双极型晶体管
| 型号： | 2N3767SMD05 |
| 厂家： | 
SEME LAB |
| 描述： | NPN BIPOLAR TRANSISTOR |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3767SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
NPN BIPOLAR TRANSISTOR
IN A CERAMIC SURFACE MOUNT
PACKAGE FOR
0.76 (0.030)
min.
3.175 (0.125)
Max.
2.41 (0.095)
2.41 (0.095)
0.127 (0.005)
HIGH REL APPLICATIONS
1
3
2
FEATURES
• HIGH VOLTAGE
0.127 (0.005)
16 PLCS
0.127 (0.005)
0.50(0.020)
• FAST SWITCHING
0.50 (0.020)
max.
7.26 (0.286)
• CERAMIC SURFACE MOUNT PACKAGE
• SCREENING OPTIONS AVAILABLE
SMD05 (TO-276AA)
Underside View
PIN 1 – Base
PIN 2 – Collector PIN 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
V
V
Collector– Base Voltage (I = 0)
100V
CBO
CEO
EBO
E
Collector– Emitter Voltage (I = 0)
80V
B
Emiiter– Base Voltage (I = 0)
B
Base Current
6V
2A
I
I
B
Collector Current
4A
C
T ,T
Operating and Storage Junction Temperature Range
–55 to +150°C
25W
J
STG
P
Total Device Dissipation @ T = 25°C
D
C
Derate above 25°C
5°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3781
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 3
2N3767SMD05
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
I = 100mA
I = 0
80
V
V
I
Collector Emitter Breakdown Voltage1
C
B
(BR)CEO
V
V
= 100V
= 70V
V
V
= 1.5V
= 1.5V
100
1.0
µA
CE
CE
BE
BE
Collector Cutoff Current
CEX
T = 150°C
A
V
V
V
= 6V
I = 0
0.75
0.7
mA
I
I
I
Emitter Base Cutoff Current
Collector Emitter Cutoff Current
Collector Base Cutoff Current
ON CHARACTERISTICS
EB
CE
CB
C
EBO
CEO
CBO
= 80V
= 100V
I = 0
B
I = 0
0.1
E
I = 50mA
V
V
V
= 5V
= 5V
= 10V
30
40
20
C
CE
CE
CE
I = 500mA
160
—
h
DC Current Gain
C
FE
I = 1.0A
C
I = 1.0A
I = 0.1A
2.5
1.5
V
V
Collector Emitter Saturation Voltage
Base Emitter Voltage
C
B
CE(sat)
V
I = 1.0A
V
= 10V
CE
C
BE
TRANSIENT CHARACTERISTICS
Transistion Frequency
V
V
V
= 10V
= 10V
= 10V
I = 500mA
f
CE
CB
CE
C
T
10
50
MHz
pF
f = 10MHz
I = 0A
C
Common Base Output Capacitance
Small Signal Current Gain
C
OB
f = 100KHz
I = 100mA
h
C
fe
40
—
f = 1.0kHz
1) Pulse test : Pulse Width < 100µs ,Duty Cycle <1%
2) f is defined as the frequency at which |h | extrapolates to untity.
t
fe
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3781
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 3
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