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IXTH64N65X [LITTELFUSE]

Power Field-Effect Transistor,;
IXTH64N65X
型号： IXTH64N65X
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
文件： 总6页 (文件大小：211K)
中文：  中文翻译
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Preliminary Technical Information  
X-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 64A  
RDS(on) 51m  
IXTH64N65X  
N-Channel Enhancement Mode  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
Tab  
S
ID25  
IDM  
TC = 25C  
64  
A
A
G = Gate  
S = Source  
D
= Drain  
TC = 25C, Pulse Width Limited by TJM  
128  
Tab = Drain  
PD  
TC = 25C  
890  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
International Standard Package  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Applications  
3.0  
5.0  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
10 A  
100 A  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
51 m  
Robotics and Servo Controls  
DS100618C(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTH64N65X  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D
A
A2  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
30  
52  
S
A
B
E
RGi  
1.5  
Q
S
D2  
P1  
R
D1  
Ciss  
Coss  
Crss  
5500  
4090  
80  
pF  
pF  
pF  
D
4
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
L1  
C
E1  
L
Effective Output Capacitance  
Co(er)  
Co(tr)  
257  
834  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
A1  
b
b2  
C
1 - Gate  
2,4 - Drain  
3 - Source  
b4  
e
td(on)  
tr  
td(off)  
tf  
22  
25  
80  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 1(External)  
Qg(on)  
Qgs  
143  
29  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
70  
RthJC  
RthCS  
0.14 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
64  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
256  
1.4  
V
trr  
QRM  
IRM  
450  
10  
44  
ns  
IF = 32A, -di/dt = 100A/μs  
C  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTH64N65X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
180  
160  
140  
120  
100  
80  
V
= 10V  
9V  
V
= 10V  
8V  
GS  
GS  
8V  
7V  
7V  
6V  
60  
6V  
5V  
40  
20  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 64A  
D
I
= 32A  
D
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.  
Drain Current  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
20  
40  
60  
80  
100  
120  
140  
160  
180  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTH64N65X  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
60  
T
J
= 25ºC  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
8
100,000  
10,000  
1,000  
100  
V
= 325V  
DS  
I
I
= 32A  
D
G
= 10mA  
C
iss  
6
C
oss  
4
2
C
rss  
= 1 MHz  
f
10  
0
1
10  
100  
1000  
0
20  
40  
60  
80  
100  
120  
140  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH64N65X  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
1000  
100  
10  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
R
Limit  
)
DS(  
on  
25µs  
100µs  
1ms  
1
T
= 150ºC  
= 25ºC  
J
T
C
10ms  
Single Pulse  
100ms  
DC  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_64N65X(J8-R4T4) 6-17-15-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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