IXTH6N150 [IXYS]
Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3;
| 型号： | IXTH6N150 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage
Power MOSFETs
VDSS = 1500V
ID25 = 6A
RDS(on) ≤ 3.5Ω
IXTT6N150
IXTH6N150
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-268 (IXTT)
G
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1500
1500
V
V
D (Tab)
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
TO-247 (IXTH)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
6
A
A
24
IA
EAS
TC = 25°C
TC = 25°C
3
500
A
mJ
G
D
D (Tab)
S
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
G = Gate
S = Source
D
= Drain
540
Tab = Drain
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
Md
Mounting Torque (TO247)
1.13 / 10
Nm/lb.in.
z
International Standard Packages
Molding Epoxies Weet UL 94 V-0
Flammability Classification
Fast Intrinsic Diode
z
Weight
TO-268
TO-247
4
6
g
g
z
z
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1500
3.0
Typ.
Max.
z
Easy to Mount
Space Savings
High Power Density
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
z
5.0
±100 nA
Applications
IDSS
25 μA
TJ = 125°C
250 μA
z
z
z
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
3.5
Ω
DS100233B(05/12)
© 2012 IXYS CORPORATION, All Rights Reserved
IXTT6N150
IXTH6N150
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
4.0
6.5
mS
Ciss
Coss
Crss
2230
170
64
pF
pF
pF
td(on)
tr
td(off)
tf
22
20
50
38
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3Ω (External)
Terminals: 1 - Gate
3 - Source
2,4 - Drain
Qg(on)
Qgs
67
12
36
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.23 °C/W
°C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
6
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 6A, VGS = 0V, Note 1
24
TO-247 Outline
1.3
trr
1.5
12
9
μs
A
IF = 3A, -di/dt = 100A/μs
IRM
QRM
∅ P
1
2
3
VR = 100V, VGS = 0V
μC
e
Terminals: 1 - Gate
2 - Drain
Note:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT6N150
IXTH6N150
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
10
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
VGS = 10V
VGS = 10V
7V
7V
6V
6V
5V
5V
0
2
4
6
8
10
12
14
16
18
40
10
0
5
10
15
20
25
30
35
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
6
5
4
3
2
1
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
7V
VGS = 10V
6V
I D = 6A
I D = 3A
5V
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100
125
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 3A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
7
6
5
4
3
2
1
0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
1
2
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
IXTT6N150
IXTH6N150
Fig. 8. Transconductance
Fig. 7. Input Admittance
12
10
8
9
8
7
6
5
4
3
2
1
0
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
- 40ºC
6
125ºC
4
2
0
3.5
0.3
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.0
40
0
1
2
3
4
5
6
7
8
9
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
20
18
16
14
12
10
8
VDS = 750V
I
D = 3A
I G = 10mA
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.4
0.5
0.6
0.7
0.8
0.9
0
10
20
30
40
50
60
70
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10
1
10,000
1,000
100
= 1 MHz
f
R
Limit
DS(on)
C
iss
25µs
100µs
C
oss
rss
1ms
10ms
T
T
= 150ºC
= 25ºC
J
C
C
DC
Single Pulse
0.1
10
10
100
1,000
10,000
5
10
15
20
25
30
35
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT6N150
IXTH6N150
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N150 (5P)1-19-10
相关型号：
IXTH76N25T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
IXYS
©2020 ICPDF网 联系我们和版权申明