IXTH6N120 [IXYS]
High Voltage Power MOSFET; 高压功率MOSFET
| 型号： | IXTH6N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage Power MOSFET |
| 文件： | 总4页 (文件大小：590K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXTH 6N120
IXTT 6N120
VDSS
ID25
= 1200 V
6 A
High Voltage
Power MOSFET
=
RDS(on) = 2.6 Ω
N-Channel Enhancement Mode
Avalanche Rated
PreliminaryDataSheet
TO-247AD(IXTH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 150°C
1200
1200
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
20
30
V
V
(TAB)
ID25
TC = 25°C
6
A
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
24
6
A
A
TO-268 (IXTT) Case Style
EAR
EAS
TC = 25°C
TC = 25°C
25
mJ
mJ
G
500
(TAB)
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TC = 25°C
300
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
z
z
z
Md
1.13/10 Nm/lb.in.
Weight
TO-247AD
TO-268
6
4
g
g
z
Low package inductance
- easy to drive and to protect
Advantages
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
1200
2.5
Max.
z
Easy to mount
Space savings
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
VDS = VDSS
V
V
z
z
5.0
High power density
100
nA
IDSS
TJ = 25°C
TJ = 125°C
25
500
µA
µA
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
RDS(on)
2.6
Ω
DS99024B(01/04)
© 2004 IXYS All rights reserved
IXTH 6N120
IXTT 6N120
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD Outline
VDS = 20 V; ID = 0.5 ID25, pulse test
3
5
S
Ciss
Coss
Crss
1950
175
60
pF
pF
pF
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
28
33
42
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
RG = 4.7 Ω (External)
Tab - Drain
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
Qg(on)
Qgs
56
13
25
nC
nC
nC
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCK
0.42
K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247)
0.21
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
Symbol
IS
TestConditions
R
S
5.49
.170 .216
242 BSC
6.15 BSC
VGS = 0 V
6
24
A
ISM
Repetitive
A
V
TO-268 Outline
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ns
Trr
IF = 6A
-di/dt = 100 A/µs
850
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 6N120
IXTT 6N120
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
6
5
4
3
2
10
8
6
4
2
0
VGS = 10V
VGS = 10V
9V
8V
7V
9V
8V
7V
6V
5V
6V
5V
1
0
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
6
5
4
3
2
3.1
VGS = 10V
2.8
2.5
2.2
1. 9
VGS = 10V
9V
8V
7V
6V
ID = 6A
1. 6
1. 3
ID = 3A
5V
1
1
0.7
0.4
0
-50 -25
0
25
50 75 100 125 150
0
5
10
15
20
25
30
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
7
6
5
4
3
2
2.8
2.5
2.2
1.9
1.6
1.3
1
VGS = 10V
TJ = 125ºC
TJ = 25ºC
1
0
0.7
-50 -25
0
25 50 75 100 125 150
0
1.5
3
4.5
6
7.5
9
TC - Degrees Centigrade
ID - Amperes
© 2004 IXYS All rights reserved
IXTH 6N120
IXTT 6N120
Fig. 8. Transconductance
Fig. 7. Input Admittance
6
5
4
3
2
12
10
8
TJ = -40ºC
25ºC
125ºC
TJ = -40ºC
25ºC
6
125ºC
4
1
2
0
0
3.5
4
4.5
5
5.5
6
6.5
0
1.5
3
4.5
6
7.5
9
VGS - Volts
ID - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
20
16
12
8
10
8
6
4
2
0
VDS = 600V
ID = 3A
IG = 10mA
TJ = 125ºC
4
TJ = 25ºC
0.8
0
0.4
0.5
0.6
0.7
0.9
0
10
20
30
40
50
60
VSD - Volts
QG - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
10 0 0
10 0
1
f = 1M hz
C
C
iss
0.1
oss
C
rss
10
0.01
0
5
10
15
20 25
30 35 40
1
10
100
1000
VDS - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
相关型号：
IXTH6N150
Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
IXYS
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