IXTH6N100D2 [IXYS]
Preliminary Technical Information Depletion Mode MOSFET; 初步的技术资料耗尽型MOSFET
| 型号： | IXTH6N100D2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Preliminary Technical Information Depletion Mode MOSFET |
| 文件： | 总5页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Depletion Mode
MOSFET
VDSX = 1000V
ID(on) > 6A
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
RDS(on) ≤ 2.2Ω
N-Channel
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
VDSX
Test Conditions
Maximum Ratings
TO-220AB (IXTP)
TJ = 25°C to 150°C
1000
V
VGSX
VGSM
Continuous
Transient
±20
±30
V
V
PD
TC = 25°C
300
W
G
D
D (Tab)
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
S
TO-247 (IXTH)
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
Mounting Torque (TO-220 & TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
G
D
S
D (Tab)
G = Gate
D
= Drain
S = Source
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
- 2.5
Typ.
Max.
BVDSX
VGS(off)
IGSX
VGS = - 5V, ID = 250μA
VDS = 25V, ID = 250μA
VGS = ±20V, VDS = 0V
VDS = VDSX, VGS= - 5V
V
V
Advantages
- 4.5
• Easy to Mount
• Space Savings
• High Power Density
±100 nA
μA
50 μA
IDSX(off)
5
TJ = 125°C
Applications
RDS(on)
ID(on)
VGS = 0V, ID = 3A, Note 1
2.2
Ω
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
VGS = 0V, VDS = 50V, Note 1
6
A
DS100183A(12/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Symbol
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 3A, Note 1
2.6
4.2
S
Ciss
Coss
Crss
2650
167
41
pF
VGS = -10V, VDS = 25V, f = 1MHz
pF
pF
td(on)
tr
td(off)
tf
25
80
34
47
ns
ns
ns
ns
Resistive Switching Times
V
GS = ±5V, VDS = 500V, ID = 3A
RG = 2.4Ω (External)
Qg(on)
Qgs
95
11
51
nC
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
VGS = 5V, VDS = 500V, ID = 3A
Qgd
RthJC
RthCS
0.41 °C/W
°C/W
TO-220
TO-247
0.50
0.21
°C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 800V, ID = 225mA, TC = 75°C, Tp = 5s
180
W
TO-247 (IXTH) AD Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
IF = 6A, VGS = -10V, Note 1
0.8
1.3
V
trr
IRM
QRM
952
16
7.6
ns
A
μC
IF = 3A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
1 = Gate
2 = Drain
3 = Source
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100 BSC
.575
.090
.040
.050
.320
1. Gate
2. Drain
3. Source
4. Drain
.625
.110
.055
.070
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
6
5
4
3
2
1
0
14
12
10
8
VGS = 5V
VGS = 5V
2V
1V
2V
1V
0V
0V
-1V
6
-1V
4
- 2V
- 3V
2
- 2V
- 3V
0
0
1
2
3
4
5
6
7
8
9
10
11
0
10
20
30
40
50
60
VDS - Volts
VDS - Volts
Fig. 4. Drain Current @ TJ = 25ºC
Fig. 3. Output Characteristics @ TJ = 125ºC
6
5
4
3
2
1
0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
VGS = 5V
0V
VGS
=
- 3.00V
- 3.25V
- 3.50V
- 3.75V
-1V
- 4.00V
- 4.25V
- 4.50V
- 2V
- 3V
0
5
10
15
20
25
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 6. Dynamic Resistance vs. Gate Voltage
Fig. 5. Drain Current @ TJ = 100ºC
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
V
DS = 700V - 100V
∆
VGS = - 3.25V
- 3.50V
- 3.75V
- 4.00V
TJ = 25ºC
- 4.25V
- 4.50V
TJ = 100ºC
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
VGS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fig. 8. RDS(on) Normalized to ID = 3A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 0V
VGS = 0V
I
= 3A
D
5V
- - - -
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
TJ - Degrees Centigrade
ID - Amperes
Fig. 9. Input Admittance
Fig. 10. Transconductance
16
14
12
10
8
12
10
8
VDS = 30V
VDS = 30V
TJ = - 40ºC
25ºC
125ºC
6
TJ = 125ºC
25ºC
- 40ºC
6
4
4
2
2
0
0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
0
2
4
6
8
10
12
14
16
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
18
16
14
12
10
8
1.3
VGS = -10V
1.2
1.1
1.0
0.9
0.8
VGS(off) @ VDS = 25V
BVDSX @ VGS = - 5V
TJ = 125ºC
6
TJ = 25ºC
4
2
0
-50
-25
0
25
50
75
100
125
150
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
4
10,000
1,000
100
VDS = 500V
D = 3A
I G = 10mA
I
3
C
iss
2
1
0
-1
-2
-3
-4
-5
C
C
oss
rss
= 1 MHz
5
f
10
0
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
100
VDS - Volts
QG - NanoCoulombs
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75ºC
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
100.00
10.00
1.00
100.00
10.00
1.00
TJ = 150ºC
C = 75ºC
TJ = 150ºC
C = 25ºC
T
T
Single Pulse
Single Pulse
RDS(on) Limit
RDS(on) Limit
25µs
100µs
1ms
100µs
1ms
10ms
10ms
100ms
DC
100ms
DC
0.10
0.10
10
100
1,000
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N100D2(6C)8-27-09
相关型号：
IXTH6N150
Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
IXYS
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