IXTH67N10 [IXYS]
MegaMOSFET; MegaMOSFET
| 型号： | IXTH67N10 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | MegaMOSFET |
| 文件： | 总4页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MegaMOSTMFET
VDSS
ID25 RDS(on)
IXTH / IXTM 67N10
IXTH / IXTM 75N10
100V 67 A 25 mΩ
100V 75 A 20 mΩ
N-ChannelEnhancementMode
Symbol
Test Conditions
MaximumRatings
TO-247 AD (IXTH)
VDSS
VDGR
TJ = 25°C to 150°C
100
100
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
D(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
TC = 25°C
67N10
75N10
67
75
A
A
TO-204 AE (IXTM)
IDM
TC = 25°C, pulse width limited by TJM
67N10
75N10
268
300
A
A
PD
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
G
D
TJM
Tstg
G = Gate,
S = Source,
D = Drain,
TAB = Drain
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Weight
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
Features
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
Switch-modeandresonant-mode
powersupplies
Motorcontrols
UninterruptiblePowerSupplies(UPS)
DC choppers
VDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
100
2
V
V
VGS(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 µA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
67N10
75N10
0.025
0.020
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91533E(5/96)
1 - 4
IXTH 67N10
IXTM 67N10
IXTH 75N10
IXTM 75N10
Symbol
gfs
Test Conditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXTH) Outline
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
30
S
Ciss
Coss
Crss
4500
1300
550
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
40
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
60 110
Terminals: 1 - Gate
2 - Drain
Tab - Drain
RG = 2 Ω, (External)
100 140
3 - Source
30
60
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Qg(on)
Qgs
180 260
30 70
90 160
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.42 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Symbol
IS
Test Conditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
67N10
75N10
67
75
A
A
TO-204AE (IXTM) Outline
ISM
VSD
trr
Repetitive;
pulse width limited by TJM
67N10
75N10
268
300
A
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.75
V
IF = IS, -di/dt = 100 A/µs, VR = 100 V
300
ns
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
6.4
1.53
1.45
11.4
3.42
1.60
.250 .450
.060 .135
.057 .063
b
D
22.22
.875
e
e1
10.67 11.17
5.21 5.71
.420 .440
.205 .225
L
11.18 12.19
.440 .480
p
3.84
4.19
4.19
.151 .165
.151 .165
p1 3.84
q
30.15 BSC
1.187 BSC
R
12.58 13.33
.495 .525
.131 .188
R1 3.33
4.77
s
16.64 17.14
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXTH 67N10
IXTM 67N10
IXTH 75N10
IXTM 75N10
Fig. 1 OutputCharacteristics
Fig. 2 InputAdmittance
200
150
100
50
150
125
100
75
VGS = 10V
TJ = 25°C
9V
8V
50
7V
25
6V
5V
TJ = 125°C
TJ = 25°C
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
Fig. 4 TemperatureDependence
of Drain to Source Resistance
1.4
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
TJ = 25°C
1.3
1.2
1.1
1.0
0.9
0.8
VGS = 10V
ID = 37.5A
VGS = 15V
0
20 40 60 80 100 120 140 160
ID - Amperes
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Drain Current vs.
CaseTemperature
Fig. 6 TemperatureDependenceof
BreakdownandThresholdVoltage
80
60
40
20
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
75N10
VGS(th)
BVDSS
67N10
-50 -25
0
25 50 75 100 125 150
TC - Degrees C
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
3 - 4
IXTH 67N10
IXTM 67N10
IXTH 75N10
IXTM 75N10
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
VDS = 50V
ID = 37.5A
10µs
Limited by RDS(on)
I
G = 1mA
100µs
100
10
1
1ms
10ms
100ms
0
25 50 75 100 125 150 175 200
Gate Charge - nCoulombs
1
10
100
VDS - Volts
Fig.9 CapacitanceCurves
Fig.10 Source Current vs. Source
to Drain Voltage
150
125
100
75
6000
5000
4000
3000
2000
1000
0
Ciss
f = 1MHz
DS = 25V
V
50
Coss
TJ = 125°C
TJ = 25°C
25
Crss
0
0
5
10
15
20
25
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VDS - Volts
VSD - Volt
Fig.11 TransientThermalImpedance
D=0.5
0.1
0.01
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4 - 4
相关型号：
IXTH6N150
Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
IXYS
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