IXTH62N65X2 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTH62N65X2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
X2-Class
Power MOSFET
VDSS = 650V
ID25 = 62A
RDS(on) 50m
IXTH62N65X2
N-Channel Enhancement Mode
Avalanche Rated
TO-247
G
D
Symbol
VDSS
Test Conditions
Maximum Ratings
S
D (Tab)
D = Drain
TJ = 25C to 150C
650
650
V
V
G = Gate
S = Source
VDGR
TJ = 25C to 150C, RGS = 1M
Tab = Drain
VGSS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
62
A
A
124
IA
TC = 25C
TC = 25C
10
2
A
J
EAS
Features
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
15
V/ns
W
780
International Standard Package
Low RDS(ON) and QG
TJ
-55 ... +150
150
C
C
C
Avalanche Rated
TJM
Tstg
Low Package Inductance
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13 / 10
6
Nm/lb.in
g
High Power Density
Easy to Mount
Space Savings
Weight
Applications
Symbol
Test Conditions
Characteristic Values
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
650
V
V
2.7
5.0
100 nA
IDSS
25 A
TJ = 125C
300 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
50 m
DS100679B(4/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTH62N65X2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
D
A
A
0P
+
B
O 0K M D B M
E
+
A2
A2
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
25
56
S
Q
S
D2
+
R
RGi
0.9
D1
D
0P1
4
Ciss
Coss
Crss
5800
4260
2.3
pF
pF
pF
1
2
3
ixys option
C
L1
VGS = 0V, VDS = 25V, f = 1MHz
E1
L
Effective Output Capacitance
A1
b
b2
Co(er)
Co(tr)
210
890
pF
pF
c
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
b4
PINS: 1 - Gate
e
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
td(on)
tr
td(off)
tf
28
11
56
5
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 2 (External)
Qg(on)
Qgs
100
28
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
35
RthJC
RthCS
0.16 C/W
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
62
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
248
1.4
V
trr
QRM
IRM
445
8.2
36.7
ns
IF = 31A, -di/dt = 100A/μs
μC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTH62N65X2
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
180
160
140
120
100
80
V
= 10V
8V
GS
60
50
40
30
20
10
0
V
= 10V
8V
GS
7V
6V
7V
60
6V
5V
40
20
5V
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
7V
GS
60
50
40
30
20
10
0
V
= 10V
GS
6V
I
= 62A
D
I
= 31A
D
5V
4V
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
T = 125oC
J
BV
DSS
T = 25oC
J
V
GS(th)
20
40
60
80
100
120
140
160
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
IXTH62N65X2
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
T
J
= 125oC
25oC
- 40oC
-50
-25
0
25
50
75
100
125
150
3.5
0.3
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
100
90
80
70
60
50
40
30
20
10
0
200
180
160
140
120
100
80
T
J
= - 40oC
25oC
125oC
T
J
= 125oC
60
T
J
= 25oC
40
20
0
0
10
20
30
40
50
60
70
80
90
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10
8
100,000
10,000
1,000
100
V
= 325V
DS
I
I
= 31A
D
G
= 10mA
C
iss
6
C
C
oss
rss
4
2
10
= 1 MHz
f
0
1
0
10
20
30
40
50
60
70
80
90
100
10
100
1000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH62N65X2
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
45
40
35
30
25
20
15
10
5
1000
100
10
R
Limit
)
DS(
on
25μs
100μs
1ms
1
T = 150oC
J
10ms
T
= 25oC
C
Single Pulse
0
0.1
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaa
0.4
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_62N65X2(X7-S602) 10-08-15
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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