IXTH64N65X [IXYS]
Power Field-Effect Transistor,;型号: | IXTH64N65X |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, |
文件: | 总5页 (文件大小:161K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Technical Information
X-Class
Power MOSFET
VDSS = 650V
ID25 = 64A
RDS(on) 51m
IXTH64N65X
N-Channel Enhancement Mode
TO-247 (IXTH)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
650
650
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
Tab
S
ID25
IDM
TC = 25C
64
A
A
G = Gate
S = Source
D
= Drain
TC = 25C, Pulse Width Limited by TJM
128
Tab = Drain
PD
TC = 25C
890
W
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
Md
Mounting Torque
1.13/10
6
Nm/lb.in
g
International Standard Package
Low RDS(ON) and QG
Low Package Inductance
Weight
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
650
V
V
Applications
3.0
5.0
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
IDSS
10 A
100 A
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
51 m
Robotics and Servo Controls
DS100618C(6/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXTH64N65X
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
D
A
A2
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
30
52
S
A
B
E
RGi
1.5
Q
S
D2
P1
R
D1
Ciss
Coss
Crss
5500
4090
80
pF
pF
pF
D
4
VGS = 0V, VDS = 25V, f = 1MHz
1
2
3
L1
C
E1
L
Effective Output Capacitance
Co(er)
Co(tr)
257
834
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
A1
b
b2
C
1 - Gate
2,4 - Drain
3 - Source
b4
e
td(on)
tr
td(off)
tf
22
25
80
28
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 1 (External)
Qg(on)
Qgs
143
29
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
70
RthJC
RthCS
0.14 C/W
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
64
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
256
1.4
V
trr
QRM
IRM
450
10
44
ns
IF = 32A, -di/dt = 100A/μs
C
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTH64N65X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
60
50
40
30
20
10
0
180
160
140
120
100
80
V
= 10V
9V
V
= 10V
8V
GS
GS
8V
7V
7V
6V
60
6V
5V
40
20
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
70
60
50
40
30
20
10
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 64A
D
I
= 32A
D
5V
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade
VDS - Volts
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.
Drain Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
T
J
= 125ºC
BV
DSS
T
J
= 25ºC
V
GS(th)
20
40
60
80
100
120
140
160
180
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXTH64N65X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
T
J
= 125ºC
25ºC
- 40ºC
-50
-25
0
25
50
75
100
125
150
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
90
80
70
60
50
40
30
20
10
0
200
180
160
140
120
100
80
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
60
T
J
= 25ºC
40
20
0
0
10
20
30
40
50
60
70
80
90
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10
8
100,000
10,000
1,000
100
V
= 325V
DS
I
I
= 32A
D
G
= 10mA
C
iss
6
C
oss
4
2
C
rss
= 1 MHz
f
10
0
1
10
100
1000
0
20
40
60
80
100
120
140
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH64N65X
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Output Capacitance Stored Energy
1000
100
10
50
45
40
35
30
25
20
15
10
5
R
Limit
)
DS(
on
25µs
100µs
1ms
1
T
= 150ºC
= 25ºC
J
T
C
10ms
Single Pulse
100ms
DC
0
0.1
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_64N65X(J8-R4T4) 6-17-15-A
相关型号:
IXTH6N150
Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
IXYS
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