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IXTH12N65X2 [LITTELFUSE]

Power Field-Effect Transistor,;
IXTH12N65X2
型号： IXTH12N65X2
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 12A  
RDS(on) 300m  
IXTA12N65X2  
IXTP12N65X2  
IXTH12N65X2  
N-Channel Enhancement Mode  
TO-263 (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
650  
650  
V
V
TO-220 (IXTP)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
12  
24  
A
A
D
S
D (Tab)  
IA  
TC = 25C  
TC = 25C  
6
A
TO-247 (IXTH)  
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
15  
V/ns  
W
180  
G
D
D (Tab)  
TJ  
-55 ... +150  
150  
C  
C  
C  
S
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10.65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
2.5  
4.5  
Applications  
100 nA  
A  
IDSS  
5
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
300 m  
Robotics and Servo Controls  
DS100670C(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
6.6  
11.0  
S
RGi  
4
Ciss  
Coss  
Crss  
1100  
830  
1.5  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
53  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
190  
td(on)  
tr  
td(off)  
tf  
23  
24  
52  
16  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 20(External)  
Qg(on)  
Qgs  
17.7  
5.5  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
5.5  
RthJC  
RthCS  
0.69 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
12  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.4  
V
trr  
QRM  
IRM  
270  
2.5  
18.5  
ns  
IF = 6A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
28  
24  
20  
16  
12  
8
12  
10  
8
V
= 10V  
7V  
V
= 10V  
8V  
GS  
GS  
7V  
6V  
6
6V  
5V  
4
5V  
4V  
2
4
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
12  
10  
8
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 12A  
D
6
I
= 6A  
D
5V  
4V  
4
2
0
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 6A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T = 125oC  
J
T
J
= 25oC  
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
4
8
12  
16  
20  
24  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
18  
16  
14  
12  
10  
8
14  
12  
10  
8
T
J
= 125oC  
25oC  
- 40oC  
6
6
4
4
2
2
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
20  
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
T
J
= 25oC  
6
4
2
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10000  
1000  
100  
10  
10  
8
V
I
= 325V  
DS  
= 6A  
C
D
iss  
I
= 10mA  
G
6
C
oss  
4
2
= 1 MHz  
f
C
rss  
1
0
1
10  
100  
1000  
0
2
4
6
8
10  
12  
14  
16  
18  
VDS - Volts  
Q
- NanoCoulombs  
IGns.  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
100  
10  
11  
10  
9
R
DS(  
on  
Limit  
25μs  
100μs  
)
8
7
6
1
5
4
1ms  
3
0.1  
0.01  
T
= 150oC  
= 25oC  
J
10ms  
2
T
C
Single Pulse  
1
0
10  
100  
1,000  
0
100  
200  
300  
VDS - Volts  
400  
500  
600  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_12N65X2 (X3-S602) 1-06-16  
IXTA12N65X2 IXTP12N65X2  
IXTH12N65X2  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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